- Type of paper
: Paper in book
Title: Power Converters
- Authors:
- Benčić, Zvonko (3062)
- Editors
- Štefanović, Duško
Publisher: Hrvatski leksikografski zavod
Year: 1996
Language: hrvatski
Keywords: electronic power converters, power converter topology, interaction on power supply and load, applications
- Type of paper
: Paper in journal
Title: Accuracy of estimation of virtual junction temperature for
semiconductor devices using two-pulse method
- Authors:
- Benčić, Zvonko (3062)
- Ilić-Roller, Dinka (134506)
Journal: Automatika
Number: 3 4
ISSN: 0005-1144
Volume: 32
Year: 1991
Pages: from 87 to 93
Number of references: 9
Language: engleski
Summary: The two-pulse method is used for calculating a device's
virtualjunction temperature at the end of a periodical sequence ofcurrent
pulses. For a general RC-pair of the electrical model ofa device's thermal
circuit, the difference between normalizedtemperature found by means of
two-pulse method and normalizedaccurate temperature was calculated here.
Normalization factor isthe maximum temperature possible for a general
RC-pair.Calculation findings are shown in diagrams, and this for
atransitional and stationary state. An example illustrates the useof
diagrams.
Keywords: semiconductor devices, virtual junction temperature, transient thermal impedance, current ratings
- Type of paper
: Paper in journal
Title: Some peculiarities of semiconductor devices transient
thermal impedance
- Authors:
- Benčić, Zvonko (3062)
Journal: Elektrotehnika
Number: 5
ISSN: 0013-5844
Volume: 34
Year: 1991
Pages: from 197 to 202
Number of references: 16
Language: hrvatski
Summary: Transient thermal impedance was considered for both
constant andpulse currents. An explanation was sought for the empirical
factthat transient thermal impedance can be expressed as a sum
ofexponential functions. A simple and brief demonstration oftransient
thermal impedance for pulse current by using thediscrete Laplace's
transformation is given. The paper examinesthe time course of the
difference between the impedances.
Keywords: electronics, semiconductor devices, transient thermal impedance
- Type of paper
: Paper in journal
Title: Thermal response of a semiconductor rectifier subjected to
surge current
- Authors:
- Damjanić, Frano B. (8883)
- Šelih, Jana
- Benčić, Zvonko (3062)
- Bešić, Andro (197990)
Journal: Inženjersko modeliranje
Number: 1 4
ISSN: 0352-9495
Volume: 4
Year: 1991
Pages: from 13 to 20
Number of references: 16
Language: engleski
Summary: A numerical technique for the prediction of one/more
surgecurrent pulses of PIN semiconductor devices is described. Thetechnique
is based on F.E. model for transient nonlinear thermalanalysis. A
relationship between surge current and heat generatedin semiconductor
devices is established. Concept of the techniqueis based on the monitoring
silicon pellet temperature due tosurge current. Ensuring that the surge
current does not heat thesilicon pellet above a critical temperature the
semiconductordevice can be appropriately selected. A commercial thyristor
isconsidered and numerical results are presented. Comparison ismade with
semiconductor device manufacturer catalogue data.
Keywords: semiconductor power devices, diode, thyristor, surge current rating
- Type of paper
: Paper in journal
Title: Estimation of transient thermal impedance for constant
current of a power thyristor using temperature field calculation
- Authors:
- Benčić, Zvonko (3062)
- Bešić, Andro (197990)
- Damjanić, Frano B. (8883)
- Šelih, Jana
Journal: IEEE Transactions on Electron Devices
Number: 10
ISSN: 0018-9383
Volume: 40
Year: 1993
Pages: from 1885 to 1887
Number of references: 10
Language: engleski
Summary: Transient thermal impedance for constant current was
calculatedby dividing the overtemperature of a given spot within a
siliconpellet with power losses. The calculation of a temperature fieldin a
silicon pellet was based on the assumption that losses areproduced in the
silicon pellet only. Calculation results oftransient thermal impedance for
constant current of one powerthyristor were compared to its catalog values.
Keywords: power thyristor, transient thermal impedance
- Type of paper
: Paper in journal
Title: A method of detecting measurement errors of the transient
thermal impedance for constant current from its time dependence
- Authors:
- Benčić, Zvonko (3062)
- Jakopović, Željko (111672)
Journal: Measurement
Number: 12
ISSN: 0263-2241
Year: 1993
Pages: from 123 to 131
Number of references: 12
Language: engleski
Summary: The method is based on the fact that the transient
thermalimpedance can be approximated by a sum of exponential functions.If
the approximation curve does not pass through the measuredpoints, it has
probably been inaccurately determined.Investigation of the course of the
transient thermal impedanceinvolved 201 selected semiconductor devices.
Typical casesof measurement inaccuracies are allustrated.
Keywords: semiconductor devices, transient thermal impedance, virtual junction temperature, measurement of transient thermal impedance
- Type of paper
: Paper in proceedings
Title: Software package for parameter identification of tansient
function of thermal systems and subsystems
- Authors:
- Benčić, Zvonko (3062)
- Jakopović, Željko (111672)
- Editors
- Srb, Neven
Proceedings title: 4. SONT, 4. međunarodni simpozij o novim tehnologijama
Language: hrvatski
Place: Zagreb
Year: 1993
ISBN/ISSN: 86-81997
Pages: from 191 to 194
Meeting: 4. međunarodni simpozij o novim tehnologijama
Held: from 10/25/93 to 10/27/93
Summary: The programme was developed for application in the analysis
andsynthesis of thermal systems that can be modelled usingconcentrated or
distributed thermal resistances and capacities intransient and stationary
conditions. The analysis yield transientfunctions (TF) for thermal
subsystems from the measured TFs of athermal system and measured time
course of the referencetemperatures for individual subsystems. The
synthesis yields TFsof a thermal system from the known TFs of thermal
subsystems.This programme package consists of: (i) an algorithm for
theidentification of chain RC-network parameters by means of TFs,(ii) an
algorithm for converting the chain into ladder RC-networkand vice versa,
and (iii) algorithms to compute the TFs of achain and of a ladder
RC-network. Programme application isillustrated by synthesis and analysis
of a thermal system whichconsists of a semiconductor transistor switch
mounted on aheatsink.
Keywords: transient function, thermal system transient function, thermal sybsistem transient function
- Type of paper
: Paper in proceedings
Title: Diagrams for calculating the virtual junction temperature
ripple of semiconductor devices
- Authors:
- Benčić, Zvonko (3062)
- Ilić-Roller, Dinka (134506)
Proceedings title: EPE-MADEP'91, Symposium on Materials and Devices for Power Electronics
Language: engleski
Place: Torino, Italija
Year: 1991
Pages: from 74 to 79
Meeting: 4th European Conference on Power Electronics and Applications
Held: from 09/02/91 to 09/06/91
Summary: Diagrams for constant pulse current with rectangular
andsinusoidal wave forms were calculated. They are designed tocalculate the
difference between virtual junction temperature atthe end and at the
beginning of current pulse. The describedmethod is valid for all
semiconductor devices whose thermalcircuit can be modeled electrically by
serial RC-pair connectionwhose forward characteristic can be approximated
by thresholdvoltage and slope resistance. The use of diagrams is
illustrated.
Keywords: semiconductor devices, diodes, thyristors, virtual junction temperature
- Type of paper
: Paper in proceedings
Title: Application of novel software tools on power
semiconductor's thermal calculations
- Authors:
- Jakopović, Željko (111672)
- Editors
- Balestrin, Petar
- Budin, Leo
- Koren, Zlatko
- Mikec, Antun
- Peruško, Uroš
- Zemanek, Heinz
Proceedings title: 3. SONT, 3. međunarodni simpozij o novim tehnologijama; 04 Računarstvo, ...
Language: hrvatski
Place: Zagreb
Year: 1991
ISBN/ISSN: 86-81997-03-3
Pages: from 35 to 40
Meeting: III simpozij o novim tehnologijama
Held: from 10/15/91 to 10/17/91
Summary: Paper describes application of universal simulation
softwarepackage and personal computer on calculation of virtual
junctiontemperature of power semiconductors (VJT). Calculation of VJT
isapplicable, with relativelly small changes in simulation model,to
different types of power semiconductors and to differentstructures of
electronic power converters. Basic data needed forcalculation of VJT are
taken from power semiconductor producer'scatalogues, parameters of
semiconductor's thermal model areidentified with a help of THERM programme
on the base oftransient thermal impedance curve. Current flow data are
definedin advance or calculated on the base of electronic powerconverter
model.
Keywords: power semiconductor components, virtual junction temperature, virtual junction temperature calculation
- Type of paper
: Paper in proceedings
Title: A tentative catalogue-based prediction of arbitrary surge
on-state current for PIN semiconductor devices
- Authors:
- Grgurić, Boris (131393)
- Benčić, Zvonko (3062)
- Editors
- Benčić, Zvonko (3062)
- Biljanović, Petar
- Dužević, Davor
- Galić, Roman
- Staerker, Helmut
- Ilić, Ivan
- Jeren, Branko
- Majić, Mirko
- Muftić, Osman
- Muljević, Vladimir
- Šurina, Tugomir
Proceedings title: 3. SONT, 3. međunarodni simpozij o novim tehnologijama, 06 mikroelektronika
Language: engleski
Place: Zagreb
Year: 1991
ISBN/ISSN: 86-81997-01-7
Pages: from 151 to 155
Meeting: III simpozij o novim tehnologijama
Held: from 10/15/91 to 10/17/91
Summary: A technique is proposed for predicting surge current by
settingout from catalogue data related to forward characteristic and
totransient thermal impedance for constant current (TTICC). With itan
estimation was made of the surge current of one or severalcurrent pulses of
sinusoidal waveform for some ten differentdiodes and thyristors. The
results of the estimation werecompared with catalogue data.
Keywords: power semiconductor devices, diodes, thyristors, surge current
- Type of paper
: Paper in proceedings
Title: Thermal response of a semiconductor rectifier subjected to
surge current
- Authors:
- Damjanić, Frano B. (8883)
- Šelih, Jana
- Benčić, Zvonko (3062)
- Bešić, Andro (197990)
- Editors
- Lewis, W. R.
- Chin, J. H.
- Homsy, G. M.
Proceedings title: Proceedings of the Seventh International Conference held in Stanford
Language: engleski
Place: Swansea, United Kingdom
Year: 1991
ISBN/ISSN: 0-906674-76-x
Pages: from 1589 to 1599
Meeting: Numerical Methods in Thermal Problems
Held: from 07/08/91 to 07/12/91
Summary: A numerical technique for the prediction of one/more
currentpulses of PIN semiconductor devices is described. The techniqueis
based on F.E. model for the transient nonlinear thermalanalysis. A
relationship between surge current and heat generatedin semiconductor
devices is established. Concept of the techniqueis based on monitoring
silicon pellet temperature due tosurge current. Ensuring that the surge
current does not heat thesilicon pellet above the critical temperature the
semiconductordevice can be appropriately selected. A commercial thyristor
isconsidered and numerical results are presented. Comparison ismade with
semiconductor device manufacturer catalogue data.
Keywords: power semiconductor devices, diodes, thyristors, rated surge current, nonlinear thermal analysis
- Type of paper
: Paper in proceedings
Title: The transient thermal impedance of a semiconductor device
- heat sink thermal system
- Authors:
- Benčić, Zvonko (3062)
- Miletić, Marinko (87633)
- Mrkoci, Damir
Proceedings title: Zbornik radova - 37. međunarodni godišnji skup KoREMA, 1. svezak
Language: engleski
Place: Zagreb
Year: 1992
ISBN/ISSN: 86-81571-11-7
Pages: from 558 to 564
Meeting: 37. međunarodni godišnji skup KoREMA
Held: from 04/26/92 to 04/29/92
Summary: An algorithm has been set out to compute the transient
thermalimpedance (TTI) of a semiconductor device - heat sink (SDHS)system
starting from the TTI of a semiconductor device and fromTTI of a heat sink.
The way an algorithm of the computation isperformed is illustrated. It is
shown that TTI of real systemsmay not be obtained by the algebraic addition
of the TTIs of theindividual parts of the system.
Keywords: semiconductor devices, heat sinks, transient thermal impedance,
- Type of paper
: Paper in proceedings
Title: Computer controlled measurement of power MOSFET transient
thermal response
- Authors:
- Jakopović, Željko (111672)
Proceedings title: PESC '92
Language: engleski
Place: Madrid, Spain
Year: 1992
ISBN/ISSN: 0-7803-0695-3
Pages: from 1026 to 1032
Meeting: 23rd Annual Power Electronics Specialists Conference
Held: from 06/29/92 to 07/03/92
Summary: A measurement system for the computer controlled power
MOSFETtransient thermal response is presented. On the base of
measuredsemiconductor's temperature sensitive parameter (TSEP),
transientthermal impedance curve (TTIC) is calculated. Using THERMsoftware
and TTIC measured points, an identification ofsemiconductor's thermal model
equivalent parameters is provided.A comparison of measured and approximated
TTIC shows very goodexactness of the procedure.
Keywords: MOSFET, transient thermal impedance, measurement of transient thermal impedance
- Type of paper
: Paper in proceedings
Title: Numerical modelling in thermal analysis
- Authors:
- Damjanić, Frano B. (8883)
- Editors
- Benčić, Zvonko (3062)
Proceedings title: Modeli izmjene topline u električnim uređajima
Language: engleski
Place: Zagreb
Year: 1992
ISBN/ISSN: 92 1222 096
Pages: from 1 to 35
Meeting: Modeliranje u znanosti, tehnici i društvu: Modeli izmjene topline u električkim uređajima
Held: from 10/21/92 to 10/21/92
Summary: An introduction to the finite element analysis for the
solutionof linear and nonlinear steady-state and transient heat
transferproblems in solids is presented. The basic governing equations
ofthe heat conduction are firstly presented, and the finite elementspatial
discretisation of the heat equations using isoparametricfinite elements is
briefly described. Since certain classes ofthermal problems involve
unbounded continua "mapped" infiniteelements are also briefly summarised. A
"family" of the two-leveltime integration schemes is considered, and a
general solutionprocedure for the solution of linear and nonlinear
steady-stateand transient thermal problems is listed. Since each
algorithmfor integration in the time domain has its own
stability,convergence and accuracy (numerical) characteristics, thesolution
strategies for overcoming these difficulties arediscussed. Several
illustrative examples indicate the capabilityof the numerical modelling
presented.
Keywords: thermal analysis, numerical modelling, finite element method
- Type of paper
: Paper in proceedings
Title: Use of the assumptions of the transient function of
thermal process in semiconductor devices
- Authors:
- Benčić, Zvonko (3062)
- Editors
- Benčić, Zvonko (3062)
Proceedings title: Modeli izmjene topline u električkim uređajima
Language: hrvatski
Place: Zagreb
Year: 1992
ISBN/ISSN: 92 1222 096
Pages: from 87 to 96
Meeting: Modeliranje u znanosti, tehnici i društvu: Modeli izmjene topline u električkim uređajima
Held: from 10/21/92 to 10/21/92
Summary: The basic assumptions of linearity and time invariability
of thephysical parameters of the thermal system are explicited. It isshown
that the assumption of thermal system's linearity subsumesthat of time
constancy of the spatial distribution of losses insemiconductor device's
structure. It is also shown that theestimation of current loadability by
means of transient functionyields the more accurate results the more
uniform the temperatureof a silicon pellet. All the assumptions are also
discussed fromthe viewpoint of the conservatism of the estimate of
virtualjunction temperature of the silicon pellet.
Keywords: semiconductor devices, transient thermal impedance, calculation of virtual junction temperature
- Type of paper
: Paper in proceedings
Title: Software package for the approximation of the transient
function of thermal processes by summation of exponential functions
- Authors:
- Jakopović, Željko (111672)
- Benčić, Zvonko (3062)
- Editors
- Benčić, Zvonko (3062)
Proceedings title: Modeli izmjene topline u električkim uređajima
Language: hrvatski
Place: Zagreb
Year: 1992
ISBN/ISSN: 92 1222 096
Pages: from 141 to 148
Meeting: Modeliranje u znanosti, tehnici i društvu: Modeli izmjene topline u električkim uređajima
Held: from 10/21/92 to 10/21/92
Summary: The necessary conditions to obtain an approximation for
transientfunction by a sum of exponential functions are set out
andexplained. An identification method for transient functionparameters is
described which basically consists in graduallyeliminating exponential
functions from the transient function.Apart from parameter identification
the developed software alsoenables: (a) determinations of the mean square
error and relativeerror for the approximation, and (b) graphic
representation ofthe read-in transient function points, as well as
approximationsto be made of the transient function, and of the relative
errorof approximation of the individual points. The use of software
isillustrated by an identification of the parameters of a thermalsystem of
a power MOSFET and of power transformer.
Keywords: thermal processes, transient function, transient function approximation, MOSFET
- Type of paper
: Paper in proceedings
Title: Estimation of parameters of heat transfer model of
semiconductor devices at changeable case temperature
- Authors:
- Žunac, Robert (186611)
- Benčić, Zvonko (3062)
- Editors
- Benčić, Zvonko (3062)
Proceedings title: Modeli izmjene topline u električkim uređajima
Language: hrvatski
Place: Zagreb
Year: 1992
ISBN/ISSN: 92 1222 096
Pages: from 97 to 102
Meeting: Modeliranje u znanosti, tehnici i društvu: Modeli izmjene topline u električkim uređajima
Held: from 10/21/92 to 10/21/92
Summary: A mathematical model has been devised of the heat
transferprocess in semiconductor devices for changeable case
temperature.The proposed identification procedure for the model's
parametersis based on verified procedure for the heat transfer process
insemiconductor devices for constant case temperature and on anunambiguous
transformation method of chain electrical networkinto a ladder electrical
network.
Keywords: semiconductor devices, heat transfer model
- Type of paper
: Paper in proceedings
Title: Forward characteristic approximation method for PIN and
PNPN power devices by a line
- Authors:
- Benčić, Zvonko (3062)
- Ćosović-Bajić, Slavica
- Editors
- Biljanović, Petar
Proceedings title: MIPRO '93, Mikroelektronika, elektronika i elektroničke tehnologije
Language: hrvatski
Place: Rijeka
Year: 1993
ISBN/ISSN: 953-6042-03-7
Pages: from 331 to 336
Meeting: MIPRO '93, Mikroelektronika, elektronika i elektroničke tehnologije
Held: from 05/24/93 to 05/27/93
Summary: The approximation method is based on the condition that
averagelosses calculated by use of the measured forward characteristicand
equivalent linear forward characteristic differ as little aspossible in the
range of regular current loads. The softwarepackage developed enables: (i)
calculations of threshold voltageand slope resistance for the equivalent
linear forwardcharacteristic, (ii) graphic representation of the
forwardcharacteristic measured and of the equivalent linear
forwardcharacteristic, and (iii) graphic representation of the
relativeerror of the calculation of average losses by using
equivalentlinear forward characteristic. The software package was tested
ona statistical sample of 20 diodes and 20 thyristors.
Keywords: semiconductor devices, PIN semiconductor devices, PNPN semiconductor devices, forward characteristic, on-state losses
- Type of paper
: Paper in proceedings
Title: A power MOSFET's normalized temperature response
measurement
- Authors:
- Jakopović, Željko (111672)
- Editors
- Biljanović, Petar
Proceedings title: MIPRO '93, Mikroelektronika, elektronika i elektroničke tehnologije
Language: hrvatski
Place: Opatija
Year: 1993
ISBN/ISSN: 953-6042-03-7
Pages: from 319 to 324
Meeting: MIPRO '93, Mikroelektronika, elektronika i elektroničke tehnologije
Held: from 05/24/93 to 05/27/93
Summary: The paper describes the realisation of a computer
controlledelectrical method of power MOSFET's normalized
temperatureresponse (transient thermal impedance) measurement.
Themeasurement set-up is described, together with basic measurementsteps
and accompanied problems. Measurements are carried outusing two different
temperature sensitive parameters. Obtainedresults are suggesting of a very
good accuracy of the wholemeasuring procedure, thus enabling measured
normalizedtemperature response to be used for virtual junction
temperaturecalculations.
Keywords: semiconductor devices, MOSFET, transient thermal impedance, normalized temperature response, measurement of transient thermal impedance
- Type of paper
: Paper in proceedings
Title: A correction of measured power MOSFET's normalized
temperature response because of case temperature rise
- Authors:
- Jakopović, Željko (111672)
- Benčić, Zvonko (3062)
- Žunac, Robert (186611)
Proceedings title: EPE - Power electronics and applications, Materials and devices
Language: engleski
Place: London, Velika Britanija
Year: 1993
ISBN/ISSN: 0-85296-584-2
Pages: from 143 to 148
Meeting: 5th European Conference on Power Electronics and Applications
Held: from 09/13/93 to 09/16/93
Summary: A method of power MOSFET's normalized temperature
response(transient thermal impedance) measurement and correction
ispresented. During semiconductor device's normalized temperatureresponse
measurement it is practically impossible to maintainconstant temperature
required by a definition of normalizedtemperature response. Introduced
method enables a correction ofthe measurement error caused by the
semiconductor device's casetemperature rise. It is based on finding
semiconductor device'sthermal system model parameters and identifying the
point onthermal model which belongs to semiconductor device's
case.Measurement of power MOSFET's normalized temperature response aremade
with a help of a computer controlled electrical method, withsemiconductor
device mounted on real heatsink. A developedsoftware package enables: (i)
graphical presentation oftemperature responses, (ii) identification of
semiconductordevice thermal system parameters, and (iii) correction
ofmeasurement error caused by semiconductor device's casetemperature rise.
Keywords: power MOSFET, transient thermal impedance, normalized temperature response, measurement of transient thermal impedance
- Type of paper
: Paper in proceedings
Title: Computer assisted identification and measurement of a
semiconductor device - heatsink thermal system
- Authors:
- Benčić, Zvonko (3062)
- Jakopović, Željko (111672)
- Mrkoci, Damir
- Editors
- Olivier, Guy
- Bouchard, Real-Paul
Proceedings title: Proceedings IMACS-TC1 '93
Language: engleski
Place: Toronto, Kanada
Year: 1993
ISBN/ISSN: nema
Pages: from 45 to 48
Meeting: 4th International Conference - Computational Aspects of Electromechanical Energy Converters and Drives
Held: from 07/07/93 to 07/09/93
Summary: A computer programme was developed for calculating the
transientthermal impedance (TTI) of a semiconductor device - heatsink(SDHS)
system starting from the measured TTI of a semiconductordevice and from the
TTI of a heatsink. It is also capable ofcomputing the parameters of a
semiconductor device and a heatsinkfrom measured TTI of an SDHS system.
Programme application hasbeen illustrated.
Keywords: transient thermal impedance, measurement of transient thermal impedance
- Type of paper
: Paper in proceedings
Title: Modelling of power semiconductor switches in power
electronics
- Authors:
- Jakopović, Željko (111672)
Proceedings title: Proceedings of the 8th International Conference on Electrical Drives and Power E
Language: engleski
Place: Zagreb
Year: 1994
ISBN/ISSN: 953-6037-04-0
Pages: from 88 to 91
Meeting: EDPE'95
Held: from 09/12/94 to 09/14/94
Summary: The paper describes actual trends and approaches in power
semiconductor switch modelling and simulation of power electronics
circuits. Two basic approaches to power semiconductor switch modelling
termed as micro- and macro-modelling are described. Micro-modelling is used
in detailed circuit modelling approach and macro-modelling is used
generally in functional circuit modelling approach. Basic advantages and
disadvantages of different power semiconductor switch models are pointed
out. Several examples of power semiconductor switch micro- and macro-models
are shown. Finally a brief overview of power electronics circuit simulators
is given.
Keywords: power semiconductor switch, modelling, simulation
- Type of paper
: Paper in proceedings
Title: Using software tools for simulation of power electronics
circuits
- Authors:
- Jakopović, Željko (111672)
- Šunde, Viktor
- Editors
- Biljanović, Petar
Proceedings title: Zbornik radova savjetovanja MIPRO'94
Language: hrvatski
Place: Rijeka
Year: 1994
ISBN/ISSN: 953-6042-03-7
Pages: from 2-157 to 2-162
Held: from 05/25/94 to 05/27/94
Summary: A comparative survey of main characteristics of the most
frequently used softwares (PSPICE, MICRO-CAP II, ATOSEC5, IDAS) is given.
The result of this paper are recommendations for using individual softwares
in simulation of power electronic circuits that take into account specific
design requirements of power electronics.
- Type of paper
: M.A.
Title: Measurement and properties of power MOSFET transient
thermal response
Faculty: Fakultet elektrotehnike i računarstva Sveučilište u Zagrebu
Date of defense: 11/27/92
Language: hrvatski
Number of pages: 150
Summary: In this work the computer controlled electrical method of
powerMOSFET's normalized transient thermal response is described. Atest
set-up for power MOSFET's normalized transient thermalresponse measurement
is realized and measurement results obtainedon several MOSFET samples are
presented. Some power MOSFET'stransient thermal response peculiarities
concerning measurementprocedure and measurement conditions are analyzed. A
method forapproximation of normalized transient thermal response by a sumof
exponential functions is explained, together with THERMPC-software enabling
an identification of normalized transientthermal response parameters. A
method for power MOSFET's virtualjunction temperature calculation by
simulation of semiconductordevice's thermal system by means of novel
software tools ispresented.
Keywords: semiconductor devices, MOSFETs, transient thermal impedance, normalized transient thermal response, measurement of transient thermal impedance
- Type of paper
: M.A.
Title: Influence of forward characteristic's temperature
dependence on current rating of power semiconductor devices
Faculty: Fakultet elektrotehnike i računarstva Sveučilište u Zagrebu
Date of defense: 01/25/93
Language: hrvatski
Number of pages: 161
Summary: The topic of the research is the current ratings
ofsemiconductor power diodes and thyristors under nominal and shortcirciut
operating conditions. The theoretical basis for thecurrent ratings
calculation is based on the followingassumptions: (a) the forward
characteristic can be approximatedby threshold voltage and slope
resistance, (b) the transientthermal impedance for the constant current can
be approximated bythe sum of exponential functions, and (c) the transient
thermalimpedance for constant current under nominal operating conditionsare
independent of temperature.
The key of the performed research is the procedure forcomputing the
time dependence of virtual junction temperature forarbitrary pulse current
taking into consideration temperaturedependence of the forward
characteristic. The computation hasbeen made for the stationary state, and
for the case ofsingle-side and double-side cooling.
The current rating diagrams has been made for temperaturedependent and
temperature independent forward characteristic. Theresults of the
computation have been compared mutually and withthe current ratings
declared in the catalogues.
The general diagrams for error estimation in computing thecurrent
ratings with neglecting the temperature dependence of theforward
characteristic have been established. By using thesegeneral diagrams, the
error estimation for a series of PINdevices has been carried out.
The verification of the calculation method for surge currenthas been
been made for one or several current pulses ofsinusoidal waveform for some
ten different diodes and thyristors.
Keywords: semiconductor devices, diodes, thyristors, forward characteristic, transient thermal impedance, rated current, rated current diagrams, surge current, finite element method
- Type of paper
: Mentorship
Title: Measurement and properties of power MOSFET normalized
thermal response
Faculty: Fakultet elektrotehnike i računarstva Sveučilište u Zagrebu
Date of defense: 11/27/92
Number of pages: 150
Author: Jakopović Mr. Željko
Degree level: M.A.
- Type of paper
: Mentorship
Title: Influence of forward characteristic's temperature
dependence on current rating of power semiconductor devices
Faculty: Fakultet elektrotehnike i računarstva Sveučilište u Zagrebu
Date of defense: 01/27/94
Number of pages: 161
Author: Grgurić Mr. Boris
Degree level: M.A.
- Type of paper
: Mentorship
Title: Electronic Overcurrent Protection of 1000 kW Transmitter
Faculty: Fakultet elektrotehnike i računarstva Sveučilište u Zagrebu
Mentor: BENČIĆ ZVONKO
Date of defense: 10/24/95
Number of pages: 142
Author: Siebers dipl.inž. Alojz
Degree level: M.A.
- Type of paper
: Computer program
Title: Estimation error of virtual junction temperature
calculation for semiconductor devices using IEC approximate formula
- Authors:
- Šantek, Vladimira
- Debeljuh, Vlatko
- Benčić, Zvonko (3062)
Odering party: KONČAR - Institut za elektrotehniku
Institution depot: KONČAR - Institut za elektrotehniku
HW platform: PC 386/486
Operating system: DOS
Programming language: Microsoft Fortran, Verzija 5.1
Year: 1991
Keywords: semiconductor devices, virtual junction temperature calculation
- Type of paper
: Computer program
Title: Estimation error of virtual junction temperature
calculation for semiconductor devices using IEC approximate formula -
extension by Microsoftwindows
- Authors:
- Šantek, Vladimira
- Debeljuh, Vlatko
- Benčić, Zvonko (3062)
Odering party: KONČAR - Institut za elektrotehniku
Institution depot: KONČAR - Institut za elektrotehniku
HW platform: PC 386/486
Operating system: DOS
Programming language: Microsoft Fortran, Version 5.1
Year: 1992
Keywords: semiconductor devices, virtual junction temperature calculation
- Type of paper
: Manuscript
Title:
- Type of paper
: Other
Title: Thermal aspects of power SDs
- Authors:
- Benčić, Zvonko (3062)
Type of work: informacija o projektu, A2, no. 2, str. 16, May 1992.
Language: engleski
Keywords: semiconductor devices, current rating, virtual junction temperature, measurement of virtual junction temperature
Other: Objavljeno u: Science and Technology in the Alpine -
Adriaticregion A2, No. 2, May '92.
- Type of paper
: Other
Title: Current capability of power semiconductor devices
- Authors:
- Benčić, Zvonko (3062)
Type of work: informacija o projektu, III simpozij o novim tehnologijama, Opatija, 1993.
Language: engleski
Keywords: semiconductor devices, current rating
