SVIBOR - Project code: 2-07-254

MINISTRY OF SCIENCE AND TECHNOLOGY

Strossmayerov trg 4, HR - 10000 ZAGREB
tel.: +385 1 459 44 44, fax: +385 1 459 44 69
E-mail: ured@znanost.hr

SVIBOR

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Project code: 2-07-254


CURRENT RATINGS OF POWER SEMICONDUCTOR DEVICES


Main researcher: BENČIĆ, ZVONKO (3062)



Assistants
Type of research: applied
Duration from: 01/01/91. to 12/31/94.

Papers on project (total): 33
Papers on project quoted in Current Contents: 1
Institution name: Končar, Institut za elektrotehniku, Zagreb (8)
Department/Institute: Department of Electric Machines, Drives and Automation
Address: Unska 3
City: 10000 - Zagreb, Croatia
Communication
Phone: 385 (01) 61 29 716
Fax: 385 (01) 61 29 705

Summary: Project work includes: (1) approximate calculation methods for current capability of semiconductor devices (SD) at rated working conditions accompanied by negligible switching losses, (2) influence of forward characteristi's temperature dependence on SD current capability in rated working conditions at negligible and unnegligible switching losses, (3) measurement methods of SD virtual junction temperature (VJT) under rated working conditions, (4) calculation methods for SD current capability at rated working conditions at negligible switching losses, and (5) SD current capability calculation methods for short-circuit conditions. The research includes bipolar and unipolar SDs, thyristors, GTO-thyristors, MOSFETs, IGBTs and integrated power semiconductor devices.

Keywords: power semiconductor devices, power diodes, power thyristors, GTO-thyristors, MOSFETs, IGBTs, intagrated power semiconductor devices, losses, transient thermal impedance, transient thermal impedance measurement, virtual junction temperature, current rating, surge current rating, virtual junction temperature calculation, numerical modelling, finite element method

Research goals: Project tasks can be summarized in four points: (1) calculating semiconductor device (SD) losses by setting out from their mathematical models and from equivalent schemas of the electric circuits in which they occur, (2) calculation of virtual junction temperature (VJT) or of the silicon pellet's temperature field (3D) for SDs by starting from the losses which occur in them and from their thermal system, (3) calculation of the temperature field in the SD - heat sink system (3D), and (4) measuring SD VJT under working conditions. Expected results: (1) setting up calculation methods for current rating of PIN and PNPN SDs at negligible switching losses, (2) setting up the requirements for using temperature independent forward characteristic, (3) development of software packages for approximation the transient function of a SD thermal system and of the SD - heat sink thermal system, (4) development of software packages for calculating the transient function of a SD thermal system starting from the measured transient function of the SD - heat sink thermal system, (5) setting up a computer controlled measurement system for MOSFET VJT, (6) using of commercial software packages for calculation of losses in SD, (7) using of commercial programme packages for calculation of temperature field in nonlinear media, and setting up surge current calculation methods for PIN and PNPN SD. The research includes bipolar and unipolar SDs, thyristors, GTO-thyristors, MOSFETs, IGBTs and integrated power SDs.


COOPERATION - PROJECTS


  1. Name of project: nema


COOPERATION - INSTITUTIONS


  1. Name of institution: nema


OTHER ACHIEVEMENTS


  1. Name: nema

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Last update: 10/09/95
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