Type of research: applied Duration from: 01/01/91. to 12/31/94. Papers on project (total): 33
Papers on project quoted in Current Contents: 1
Institution name: Končar, Institut za elektrotehniku, Zagreb (8) Department/Institute: Department of Electric Machines, Drives and Automation Address: Unska 3 City: 10000 - Zagreb, Croatia
Communication
Phone: 385 (01) 61 29 716
Fax: 385 (01) 61 29 705
Summary: Project work includes: (1) approximate calculation methods
for current capability of semiconductor devices (SD) at rated working
conditions accompanied by negligible switching losses, (2) influence of
forward characteristi's temperature dependence on SD current capability in
rated working conditions at negligible and unnegligible switching losses,
(3) measurement methods of SD virtual junction temperature (VJT) under
rated working conditions, (4) calculation methods for SD current capability
at rated working conditions at negligible switching losses, and (5) SD
current capability calculation methods for short-circuit conditions. The
research includes bipolar and unipolar SDs, thyristors, GTO-thyristors,
MOSFETs, IGBTs and integrated power semiconductor devices.
Keywords: power semiconductor devices, power diodes, power thyristors, GTO-thyristors, MOSFETs, IGBTs, intagrated power semiconductor devices, losses, transient thermal impedance, transient thermal impedance measurement, virtual junction temperature, current rating, surge current rating, virtual junction temperature calculation, numerical modelling, finite element method
Research goals: Project tasks can be summarized in four points:
(1) calculating semiconductor device (SD) losses by setting out from their
mathematical models and from equivalent schemas of the electric circuits in
which they occur, (2) calculation of virtual junction temperature (VJT) or
of the silicon pellet's temperature field (3D) for SDs by starting from the
losses which occur in them and from their thermal system, (3) calculation
of the temperature field in the SD - heat sink system (3D), and (4)
measuring SD VJT under working conditions. Expected results: (1)
setting up calculation methods for current rating of PIN and PNPN SDs at
negligible switching losses, (2) setting up the requirements for using
temperature independent forward characteristic, (3) development of software
packages for approximation the transient function of a SD thermal system
and of the SD - heat sink thermal system, (4) development of software
packages for calculating the transient function of a SD thermal system
starting from the measured transient function of the SD - heat sink thermal
system, (5) setting up a computer controlled measurement system for MOSFET
VJT, (6) using of commercial software packages for calculation of losses in
SD, (7) using of commercial programme packages for calculation of
temperature field in nonlinear media, and setting up surge current
calculation methods for PIN and PNPN SD. The research includes bipolar
and unipolar SDs, thyristors, GTO-thyristors, MOSFETs, IGBTs and integrated
power SDs.