SVIBOR - Papers - project code: 1-03-178

MINISTRY OF SCIENCE AND TECHNOLOGY

Strossmayerov trg 4, HR - 10000 ZAGREB
tel.: +385 1 459 44 44, fax: +385 1 459 44 69
E-mail: ured@znanost.hr

SVIBOR

SVIBOR - Collecting Data on Projects in Croatia


Published papers on project 1-03-178


Quoted papers: 57
Other papers: 56
Total: 113


  1. Type of paper: Paper in book

    Title:

    Authors:
    Corbett, J
    Deak, P
    Desnica, Uroš (9386)
    Pearton, S
    Editors
    Pankove, J
    Johnson, N
    Publisher: Academic Press, New York
    Year: 1991
    Pages: from 49 to 64
    Language: engleski
    Summary: Studies of hydrogen have seen exciting progress in recent years,and have promise of even more in the understanding of the mechanismsof interaction of hydrogen with defects and in the unraveling of defect processes with the hydrogen decoration of defects. Theemergence of EPR andIR studies into new prominence is very promising;correlated studies with these techniques and with electrical studies shouldlead to great progress if we have the recuired funding, persistence and patience.

  2. Type of paper: Paper in book

    Title:

    Authors:
    Haynes, T.E.
    Holland, O.W.
    Desnica, Uroš (9386)
    Editors
    Pearton, S
    Sadana, D.K.
    Zavada, J.M.
    ISBN: 0
    Year: 1992
    Pages: from 823 to 828
    Number of references: 16
    Language: engleski
    Summary: Damage accumulation in Si-implanted GaAs has been characterizedby ion channeling and Raman scattering as a function of implant temperature, doseand dose rate. The damage was found to be extrmely sensitive to temperature nearroom temperature (RT), such that an implant dose of 6x10Š14Ć Si/cm2 which produceda peak damage fraction of 94% at 20C gave only a 15% damage fraction at 30C.Such a sharp damage transition obviously has important implications ofcontrolling the activation of dopants implanted at RT. One consequence is a strongdependence of the damage on dose rate near RT: the damage increase with dose rateas the dose rate is increased over nearly two orders of magnitude. Comparison ofion channeling results with Raman scattering measurements indicates that themorfologies of the dose-rate-dependent and dose-dependent damage components inRT implants are distinct, i. e., the rate-dependent component primarilyconsists of crystalline defects, while the dose-dependent damage has a largeamorphous contribution. hese experimental observations are discussed in terms of thecompetition between different damage nucleation and growth mechanisms as a functionof the implant parameters.

  3. Type of paper: Paper in book

    Title:

    Authors:
    Pivac, Branko (67912)
    Borghesi, A
    Geddo, M
    Sassela, A
    Stella, A
    Editors
    Davies, G
    DeLeo, G
    Stavola, M
    Publisher: Trans. Tech. Publ.
    Year: 1992
    Pages: from 1069 to 1074
    Language: engleski
    Summary: High spatial resolution measurements on P and B doped Czochralskisilicon sample with 100 Šm thick epitaxial layer were performed with a Fourier transforminfrared spectrometer. A relevant oxygen outdiffusion from the substrate into theepi-layer has been detected in P- doped samples. Moreover, with this technique we could map oxygenprecipitates in both substrate and epitaxial layer. Our measurements, performed withtwo different sample orientations, confirmed the platelet-like shape ofSiO2-precipitates.

  4. Type of paper: Paper in book

    Title:

    Authors:
    Urli, Natko
    Pivac, Branko (67912)
    Editors
    Davies, G
    DeLeo, G
    Stavola, M
    Publisher: Trans. Tech. Publ.
    Year: 1992
    Pages: from 285 to 290
    Language: engleski
    Summary: Various EFG polycrystalline silicon ribbons, with carbonconcentration in excess of 1018 cm-3, and with large carbon to oxygen ratio, were annealedisochronally and isothermally in the temperature range from 450 to 1250 C. IR spectroscopy andDLTS measurements were used to monitor decays and growths of various carbon, oxygen andSiC microprecipitates and agglomerates. A large absorption peak at 800 cm-1, present onlyin the surface layers, has been associated with carbon-selfinterstitial-SiOx precipitatesand a broad band from 810- 960 cm-1 with SiC nanoprecipitates in the bulk. The whole seriesof bands just below the Raman frequency was attributed to vibrations of different carbonpairs. Several energy levels associated with intragrain defect complexes as well as adistribution of the grain boundary states after the thermal treatment have been detected byDLTS measurements.

  5. Type of paper: Paper in book

    Title:

    Authors:
    Geddo, M
    Pivac, Branko (67912)
    Editors
    Coffa, S
    Priolo, F
    Rimini, E
    Poate, J
    Publisher: Kluwer
    Year: 1992
    Pages: from 119 to 125
    Language: engleski
    Summary: The interstitial oxygen profile across the epitaxial silicon andCzochralski silicon interface has been studied using a micro Fourier transforminfrared technique. Systematic transmission measurements performed in transversal wafercross-section configuration demonstrated the presence of interstitial oxygen in the epitaxiallayer, clearly indicating that solid state outdiffusion from the substrateoccurs during film preparation. Furthermore, the major consequence of outdiffusion,e.g. oxygen contamination has been shown to produce precipitation phenomena inside thefilm, directly influencing its quality.

  6. Type of paper: Paper in book

    Title:

    Authors:
    Borghesi, A
    Geddo, M
    Pivac, Branko (67912)
    Sassela, A
    Stella, A
    Editors
    Jiang, P
    Zheng, H.-Z.
    Publisher: World Scientific
    Year: 1993
    Pages: from 1649 to 0
    Language: engleski

  7. Type of paper: Paper in book

    Title:

    Authors:
    Brničević, N
    Basić, I
    Planinc, P
    Paljević, Matija
    Požeg, Miro
    Rakvin, B
    Dulčić, A
    Desnica, Uroš (9386)
    Desnica, Dunja (9390)
    Reissner, M
    Steiner, W
    Forshuber, M
    Hilscher, G
    Kirchmayr, H
    Editors
    Cardona, M
    Fulde, P
    von Klitzing, K
    Queisser, H.-J.
    Publisher: Springer-Verlag Berlin
    Year: 1993
    Pages: from 24 to 28
    Language: engleski
    Summary: A simple method is developed for the preparation of good quality superconducting samples of the compositionSr2(Ln,Ce)2MCu2O10-delta, Ln=Sm,Eu; M=Nb,Ta. Structural, microwave absorption, magneticand superconducting properties are reported.

  8. Type of paper: Paper in book

    Title:

    Authors:
    Magerle, R
    Deicher, M
    Keller, R
    Pfeifer, W
    Pross, P.
    Skudlik, H
    Desnica, Uroš (9386)
    Wichert, T
    Publisher: Konstanty Universitaet, Nukleare Festkorperphysik,
    Year: 1992
    Pages: from 66 to 69
    Language: njemački

  9. Type of paper: Paper in journal

    Title:

    Authors:
    Pivac, Branko (67912)
    Borghesi, A
    Canteri, R
    Anderle, M
    Journal: J. Mat. Sci.
    ISSN: 0022-2461
    Volume: 26
    Year: 1991
    Pages: from 2725 to 2730
    Language: engleski
    Summary: Several techniques were used to study a surface layer structureof edge-defined film-fed grown polycrystalline silicon samples grown in CO gasdeliberately added to the purging atmosphere. Although infrared analysis reveals the presence ofcubic SiC structures, other techniques such as spectroscopic ellipsometry and Ramanspectroscopy, do not detect its presence. It is concluded that a layer with specific structure,formed in the course of ribbon growth, consists of indiffused oxygen formed upon reactionof CO gas with molten Si. Indiffused oxygen, in turn, induces coaggregation of carbonand silicon selfinterstitials that probably play the role of SiC nucleationcenters, but do not have the thermal stability of SiC.

  10. Type of paper: Paper in journal

    Title:

    Authors:
    Desnica, Uroš (9386)
    Petrović, B.G.
    Skowrowski, M
    Cretella, M. C.
    Journal: J. Phys.III
    ISSN: 0302-0738
    Volume: 1
    Year: 1991
    Pages: from 1481 to 1487
    Language: engleski
    Summary: Different factors influencing the accuracy of quantitative EL2mapping were analyzed. It was found that very often the mainproblem limiting precision of those measurements is fluctuationsin the transmitted light due to surface, subsurface and volumeimperfections of the wafer. This problem was solved by combiningresults of 2 sets of 2-dimensional scans taken at two differentlight energies; one at 1.1˙eV giving information on EL2oabsorption, and the other, below 0.8˙eV, giving the backgroundtransmissiv ity. It is shown that this low-energy light mapping of GaAs wafercan also be used for evaluation of GaAs wafer preparationtechniques. ÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜ ÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜÜ

  11. Type of paper: Paper in journal

    Title:

    Authors:
    Pivac, Branko (67912)
    Borghesi, A
    Journal: J. Mat. Sci. Lett.
    ISSN: 0261-8028
    Volume: 10
    Year: 1991
    Pages: from 1013 to 1015

  12. Type of paper: Paper in journal

    Title:

    Authors:
    Desnica, Dunja (9390)
    Kranjčec, Mladen (23323)
    Čelustka, Branko (7946)
    Journal: J. Phys. Chem. Solids
    ISSN: 0022-3697
    Volume: 52
    Year: 1991
    Pages: from 915 to 920
    Language: engleski
    Summary: The absorption processes at absorption edge for the ternarysystem (GaxIn1-x)2Se3 in In-rich region was investigated. For all concetrations theabsorption coefficient axhibits exponential dependence on photon energy, following the Urbach'srule. Characteristic Urbach's parameters were determined and their temperature andcompositional dependence were investigated. Results are analyzed along the lines of thegeneral model, which allows for possible role of several different types of disorder. It wasconcluded that the absorption processes in the absorption edge for this mixedsolution of binary compounds are the results of superposition of at least two differentmechanisms, one being related to crystal's phonons and the other resulting from structural andcompositional disorder.

  13. Type of paper: Paper in journal

    Title:

    Authors:
    Desnica, Dunja (9390)
    Šantić, Branko (32562)
    Desnica, Uroš (9386)
    Journal: Appl.Surf.Sci.
    ISSN: 0169-4332
    Volume: 50
    Year: 1991
    Pages: from 269 to 272
    Summary: Illumination of semi-insulating (SI) GaAs at low temperatureswith photons in 1.0- 1.35 eV range generally produces peculiar slow-relaxation ofphotoconductivity, where either the decrease (quenching) or increase, orincrease-decrease-increase sequence were observed by several researchers. We have shown recently (Desnica et al.,Appl. Phys. A 51, 1525, 1990) and Šantic et al., Solid St. Comm. 74, 847; 1990) thatthis dynamic is connected with deep traps in SI GaAs, other than notorious deep level EL2.There is a considerable problem to asses the influence of deep traps on the properties inSI materials, as capacitance transients methods, like deep level transientspectroscopy (DLTS) are not applicable on SI materials, while current transient methods areincapable to determine the type of observed traps. Recently, (Šantic and Desnica; Appl.Phys. Lett.; 56, No.26, 1990) we proposed a new method, Thermoelectric-effectspectroscopy (TEES), in order to overcomes this problem. In this paper, we are combining time evolutions of TEES,photoconductivity and thermally stimulated current (TSC) methods in order to understandand explain quantitatively observed time evolution of photoconductivityduring low-temperature illumination. Using realistic approximations (that the changes inelectron and hole mobilities during illumination are much smaller than changes offree carrier concentrations) time evolutions of both free electrons and freeholes were calculated simultaneously. The free electron concentration remains low aslong as dominant, electron traps in material are not filled, and only then electronconcentration (as well as photoconductivity) reaches their high, constant values. The riseof free hole concentration starts earlier, in agreement with smaller hole trapconcentration and larger cross section for hole trapping, as derived from TSCmeasurements. Results are compatible with the model in which the dynamic of traps filling and changesof relative occupancies of traps with different sign are responsible for transientphenomena observed in photoconductivity during low-temperature, low-intensityillumination.®

  14. Type of paper: Paper in journal

    Title:

    Authors:
    Šantić, Branko (32562)
    Radić, Nikola (75345)
    Desnica, Uroš (9386)
    Journal: Sol.St. Comm.
    ISSN: 0038-1098
    Volume: 79
    Year: 1991
    Pages: from 535 to 538
    Summary: The expression describing the whole TSC peak curve is derived for the case of small recapture rate. Its validity is supportedwith several tests. Obtained formula is suitable for the study of trap parameterinfluence on peak characteristics, for the analysis of experimental results, andalso for the determination of trap parameters from single TSC peakmeasurement. It could be applicable to other methods based on thermally stimulatedprocesses which do not repetitively fill traps during temperature scan.

  15. Type of paper: Paper in journal

    Title:

    Authors:
    Desnica, Uroš (9386)
    Desnica, Dunja (9390)
    Šantić, Branko (32562)
    Journal: J. Phys.: Cond. Matter
    ISSN: 0022-3719
    Volume: 3
    Year: 1991
    Pages: from 5817 to 5824
    Language: engleski
    Summary: Peculiar slow-relaxation of low-temperature photoconductivity in semi-insulating GaAs was analyzed. Time evolutions of free electrons, n, and freeholes, p, was determined from independently measured photoconductivity and current due tothermoelectric effect. It was shown that during low-temperature illumination p/n ratio atfirst rises significantly and than decreases back towards initial, low value. The samebehavior was obtained from a study of time evolution of photo-Hall mobility, measured independently . Results were analyzed and explained in terms of different trapping rates of photogenerated free electrons and holes by deep traps.

  16. Type of paper: Paper in journal

    Title:

    Authors:
    Magerle, R
    Deicher, M
    Desnica, Uroš (9386)
    Keller, R
    Pfeifer, W
    Skudlik, H
    Wichert, T
    Journal: Appl.Surf.Sci.
    ISSN: 0169-4332
    Volume: 50
    Year: 1991
    Pages: from 159 to 164
    Language: engleski
    Summary: The local lattice environment of the donor In in CdS isinvestigated measuring the electric-field gradient at the site ofthe radioactive probe atom 111In by the perturbed gamma gammaangular correlation technique. It is shown that implantation ofIn into CdS with subsequent annealing drives 100% of the In atomsto CdS lattice sites. Difussion of In into CdS under S overpressure results in the formation of In(Cd)-V(Cd) pairs whichseem to be responsible for the self-compensation of In donors inCdS.

  17. Type of paper: Paper in journal

    Title:

    Authors:
    Borghesi, A
    Geddo, M
    Pivac, Branko (67912)
    Journal: J.Appl.Phys.
    ISSN: 0021-8979
    Volume: 69
    Year: 1991
    Pages: from 7251 to 7255
    Language: engleski
    Summary: Oxygen precipitation in the bulk of silicon wafers wasinvestigated by using micro-Fourier transform infrared spectroscopy. It was found that even at 1100 Cannealing (in single step) SiO2 precipitates are formed in platelet shape, in thebulk, giving rise to characteristic absorption peak in the infrared spectrum at 1230cm-1. Complete mapping of wafer cross section demonstrated that these precipitates are notdistributed homogeneously but are agglomerated in irregularly shaped clusters and areeasily detectable up to distance of about 100Šm from the back surface and from theepi-substrate interface.

  18. Type of paper: Paper in journal

    Title:

    Authors:
    Desnica, Uroš (9386)
    Desnica, Dunja (9390)
    Šantić, Branko (32562)
    Journal: Appl.Phys.Lett.
    ISSN: 0003-6951
    Volume: 58
    Year: 1991
    Pages: from 278 to 280
    Language: engleski
    Summary: Processes induced by below-the-gap illumination andrelated to defects having deep levels in Liquid Encapsulated Czochralski semi-insulating GaAscrystals were studied. It was found that the dynamics of both optical quenching andthermal recovery (above 125 K) of Thermally Stimulated Current signal related to six deeptraps was the same as that of the EL2 related photoconductivity signal. Analysis of theseresults gives evidence that some of observed deep traps in GaAs are complex defects, which might include as their constituent the EL2 defect. It means that EL2 could serve as agettering center for other native defects and/or impurities. The proposed model is inaccordance with other recently published results associating several deep traps (EL6, EL3, EL5and EL14) with EL2.

  19. Type of paper: Paper in journal

    Title:

    Authors:
    Pivac, Branko (67912)
    Borghesi, A
    Sassela, A
    Ottolini, L
    Kalejs, J
    Journal: J.Appl.Phys.
    ISSN: 0021-8979
    Volume: 70
    Year: 1991
    Pages: from 2963 to 2964
    Language: engleski
    Summary: We studied interaction of molten silicon at the meniscus surfacewith CO and CO2 gas added to an inert argon atmosphere during the growth of edge-definedfilm-fed growth polycrystalline silicon nonagons. Both gases caused a significantincrease in carbon content of the nonangons. However, most carbon remained trappedin the layer close to the surface and made a SiC-like contribution to the infraredspectrum. In addition, CO2 gas caused enhanced surface oxidation (with respect to CO gas).

  20. Type of paper: Paper in journal

    Title:

    Authors:
    Ivanda, M
    Furić, K
    Gamulin, O
    Gracin, Davor (82826)
    Journal: J. of Non-Crystalline Solids
    ISSN: 0022-3093
    Volume: 137
    Year: 1991
    Pages: from 103 to 107
    Language: engleski
    Summary: Hydrogenated amorphous silicon films were prepared by a dcmagnetron sputtering method. Broad background signal observed in Raman spectra near theexcitation line which is recently attributed to the recombination of nonthermal electronwith nonthermal holes was decomposed from the phonon bands. The Stokes/anti-Stokes ratio,depolarization ratio and the shape of the background signal have the characteristicstypical for the "boson" peak in glasses. The appearance of the "boson" peak in a-Si:H isdiscussed in a model of the non-continuous structure of amorphous silicon, composed of theblobs of strongly connected silicon atoms placed around hydrogen clusters.

  21. Type of paper: Paper in journal

    Title:

    Authors:
    Geddo, M
    Pivac, Branko (67912)
    Borghesi, A
    Stella, A
    Pedrotti, M
    Journal: Appl.Phys.Lett.
    ISSN: 0003-6951
    Volume: 58
    Year: 1991
    Pages: from 370 to 372
    Language: engleski
    Summary: The oxygen content near epitaxial layer-substrate siliconinterface was investigated using a micro Fourier transform infrared technique. Systematicmeasurements, performed in a transversal wafer cross-section configuration, clearly indicatesthe presence of interstitial oxygen in the epitaxial layer when it was grown onn-type substrates, while no evidence of oxygen in it was obtained (in concentrationdetectable by the infrared technique) when grown on p-type substrates. Interstitial oxygenprofiles, near the epitaxial layer-substrate interface, obtained by analyzing theoptical data, are reported and discussed considering different combinations of dopants inthe substrate and in the epilayer.

  22. Type of paper: Paper in journal

    Title:

    Authors:
    Borghesi, A
    Geddo, M
    Pivac, Branko (67912)
    Sassela, A
    Stella, A
    Journal: Appl.Phys.Lett.
    ISSN: 0003-6951
    Volume: 58
    Year: 1991
    Pages: from 2099 to 2101
    Language: engleski
    Summary: Oxygen content in the bulk of Czochralski silicon was analysed byusiing micro-Fourier transform infrared spectroscopy in a transversal wafercross-section configuration. This technique locally distinguishes between interstitial oxygen andoxygen precipitates in wafers used as substrates for epitaxial layer growth. Systematicmeasurements performed in the 5000-700 cm-1 wavenumber range clearly indicate the presenceof oxygen microprecipitates in the bulk of the processed silicon wafers.Quantitative determination of oxygen precipitate density is reported and compared with themeasure interstitial oxygen concentration.

  23. Type of paper: Paper in journal

    Title:

    Authors:
    Pivac, Branko (67912)
    Borghesi, A
    Geddo, M
    Stella, A
    Journal: Physica Scripta
    ISSN: 0031-8949
    Volume: 39
    Year: 1991
    Pages: from 265 to 270
    Language: engleski
    Summary: A high quality of epitaxial silicon layers grown on Czochralskisingle crystal substrates is required in semiconductor technology, since it directlyinfluences device parameters and yield. Inintentional doping of these layers from thesubstrate is well documented in the literature. However, we found no reports on unintentionalcontamination of epi-layers due to the oxygen present in the substrate. The use of micro Fourier transform infrared spectroscopy intransversal mode is shown to be a powerful technique for oxygen behavior during epitaxiallayer growth, even for lightly B and P doped substrates, is significantly different. Oxygen, that in some cases diffuses into the grown epitaxiallayer, tends to form precipitates there. This is an important consequence ofoutdiffusion since it directly influences the quality of the epitaxial layer.

  24. Type of paper: Paper in journal

    Title:

    Authors:
    Borghesi, A
    Geddo, M
    Pivac, Branko (67912)
    Stella, A
    Lupano, P
    Journal: Appl.Phys.Lett.
    ISSN: 0003-6951
    Volume: 58
    Year: 1991
    Pages: from 2657 to 2659
    Language: engleski
    Summary: Oxygen redistribution near the interface between the epitaxiallayer and substrate was monitored with micro-Fourier transform infrared measurements in atransversal wafer cross- section configuration. It has been shown that oxygencontamination of the epitaxial layer may induce the formation of SiO2 precipitates into the film, dueto outdiffusion from the substrate. To our knowledge this is the first direct evidence ofoxygen precipitation phenomena within the epitaxial layer.

  25. Type of paper: Paper in journal

    Title:

    Authors:
    Desnica, Dunja (9390)
    Journal: Journal of Electronic Materials
    ISSN: 0361-5235
    Volume: 20
    Year: 1992
    Pages: from 463 to 471
    Language: engleski
    Summary: In this paper a number of deep traps, which play a crucial role in many macroscopic properties of semi-insulating GaAs have been characterized and analyzed. The main trap parameters (activation energy and capture cross section) were deduced by several experimental methods, based on thermally stimulated current and isothermal current transients. Results were compared with other studies of deep traps in SIGaAs performed with these and other methods as well as studies of deep levels inconductive GaAs. To enable these comparisons an analysis of the methods and usually employedcalculation procedures was given as well as suggestions for the presentation of the trap parameters. It was also concluded that the observed traps are complex defects whichcorrespond to deep traps observed by other authors in a variety of other SI GaAsmaterials. Some of them seem to include, as a part of the defect, a well known defect EL2 but there are also strong indications for involvement of other structural defects and/orcommon impurities.

  26. Type of paper: Paper in journal

    Title:

    Authors:
    Desnica, Uroš (9386)
    Wagner, J
    Haynes, T.E.
    Holland, O.W.
    Journal: J.Appl.Phys.
    ISSN: 0021-8979
    Volume: 71
    Year: 1992
    Pages: from 2591 to 2595
    Language: engleski
    Summary: Raman scattering and ion channeling techniques were used toinvestigate the damage in GaAs implanted at room temperature with 100 keV Si+ ions. Theion-induced damage was analyzed for different ion doses and dose rates (currentdensities). The development of different damage components was monitored by comparing a Ramansignal which is specific to amorphization in GaAs to ion channeling results which aresensitive to small-volume crystalline defects, as well as to amorphous regions. Ramananalysis showed that the rate of growth of the amorphous fraction with implant dose wascomparable to the growth rate of the total damage as determined by ion channeling. However, whileRaman analysis indicated a weak dependence of damage on dose rate, the ion channelingresults showed a substantially stronger dependence. These results demonstrate thatthe damage morphology in GaAs is dependent upon both dose and dose rate, and that thedose-rate dependent component of the total damage consists primarily of crystalline defects.

  27. Type of paper: Paper in journal

    Title:

    Authors:
    Benchiguer, T
    Mari, B
    Schwab, C
    Desnica, Uroš (9386)
    Journal: Jpn. J. Appl. Phys.
    ISSN: 0021-4922
    Volume: 31
    Year: 1992
    Pages: from 2669 to 2672
    Language: engleski
    Summary: We show that the time evolution of the paramagnetic signals andphotoconductivity in the same semi-insulating GaAs material during illuminationbelow the gap at low temperature can both be analysed within a charge transfermodel. This model involves the formation of metastable donor-acceptor pairsdue to free carrier trapping by initially ionised defects. This result againquestions whether the common link between EL2 and the AsGa-related defects needs aconfiguration related metastability.

  28. Type of paper: Paper in journal

    Title:

    Authors:
    Gracin, Davor (82826)
    Desnica, Uroš (9386)
    Ivanda, M
    Journal: J. of Non-Crystalline Solids
    ISSN: 0022-3093
    Volume: 149
    Year: 1992
    Pages: from 257 to 263
    Language: engleski
    Summary: The amorphous hydrogenated Silicon thin films, deposited by dcmagnetron sputtering, were examined by near infrared and Fourier transformation infraredspectroscopy. It was found that, by increase of the hydrogen concentration from 6 to 32 at%,the dielectric constant decreases and the frequency of absorption peak, corresponding tostretching vibrations of Si-H bonds, increases. The results were analyzed within theframework of effective medium approach assuming medium composed of Si network and voidsdecorated with hydrogen atoms. It is concluded that the increase of the hydrogen content isaccompanied by an increase of void fraction in the total volume, with an increase of void"decoration" with hydrogen and also with increased contribution of larger voids. The obtaineddependence upon hydrogen concentration agrees well with density measurements andpredictions made based on multiple-quantum nuclear magnetic resonance spectroscopy.

  29. Type of paper: Paper in journal

    Title:

    Authors:
    Šantić, Branko (32562)
    Journal: phys. stat. sol. (a)
    ISSN: 0031-8965
    Volume: 133
    Year: 1992
    Pages: from 137 to 146
    Language: engleski
    Summary: Electrical properties of as grown crystals CuGaTe2, CuInTe2 and their mixtures CuGaxIn1-xTe2, are studied. Typical roomtemperature values of the free carrier concentration and the mobility are p=1018cm-3 and miH=30-140 cm2/Vs, respectively. The temperature dependence of carrier concentration reveals presence of two acceptors: One acceptor is very shallow and its concentration is around 1017 cm-3. Main acceptor is 71 meV deep and its concentration is in 1019 cm-3 range. The methods for the calculation of the ionization energy are discussed. Previously published results are reviewed and compared with ours.

  30. Type of paper: Paper in journal

    Title:

    Authors:
    Pivac, Branko (67912)
    Amiotti, M
    Borghesi, A
    Sassela, A
    Kalejs, J
    Journal: J.Appl.Phys.
    ISSN: 0021-8979
    Volume: 71
    Year: 1992
    Pages: from 3785 to 3787
    Language: engleski

  31. Type of paper: Paper in journal

    Title:

    Authors:
    DubČek, Pavo
    Etlinger, Božidar (11390)
    Pivac, Branko (67912)
    Kranjčec, Mladen (23323)
    Journal: Sol.St. Comm.
    ISSN: 0038-1098
    Volume: 81
    Year: 1992
    Pages: from 735 to 737
    Language: engleski
    Summary: Reflectivity measurements were used to investigate the infrared(IR) active phonon modes of š1 phase of (GaxInx-1)2Se3 solidsolution for 0.10
  32. Type of paper: Paper in journal

    Title:

    Authors:
    Borghesi, A
    Pivac, Branko (67912)
    Sassela, A
    Journal: Appl.Phys.Lett.
    ISSN: 0003-6951
    Volume: 60
    Year: 1992
    Pages: from 871 to 873
    Language: engleski
    Summary: High-spatial resolution Fourier transform infrared spectroscopypermitted us to study the effects of incident light polarizationon the absorption band related to aggregates of SiO2 disk shapedprecipitates present in annealed (100) Czochralski siliconsamples. This is the first report documenting the strongdependence of such a band intensity on light polarization.Experimental results were compared with the simulation obtainedusing the effective medium theory. From this comparison we deducethat the prec ipitates only lie on the planes among (100) which are parallel tothe wafer surface. This result can be related to the differencebetween the <100> direction and those crystallographicallyequivalent, introduced by the ingot growth process.

  33. Type of paper: Paper in journal

    Title:

    Authors:
    Pivac, Branko (67912)
    Borghesi, A
    Geddo, M
    Sassela, A
    Pedrotti, M
    Journal: Materials Sci. & Eng. B
    ISSN: 0025-5416
    Volume: 15
    Year: 1992
    Pages: from 32 to 36
    Language: engleski
    Summary: Boron accumulation was observed close to the interface between anepitaxially grown silicon layer and a silicon substrate wafer andthen analyzed. It was concluded that boron contaminationinteracting with the surface oxide on wafers led to boronaccumulation close to the interface. Such accumulation is shownto occur for epilayers of standard thickness (approximately 10Šm), with boron being electrically unactive.

  34. Type of paper: Paper in journal

    Title:

    Authors:
    Geddo, M
    Pivac, Branko (67912)
    Sassela, A
    Stella, A
    Borghesi, A
    Maierna, A
    Journal: J.Appl.Phys.
    ISSN: 0021-8979
    Volume: 72
    Year: 1992
    Pages: from 4313 to 4320
    Language: engleski
    Summary: Interstitial oxygen profile across an epitaxial silicon andCzochralski silicon interface has been studied usinghigh-spatial-resolution Fourier transform infrared spectroscopy.Systematic transmission measurements performed on a transversalwafer cross section evidenced oxygen contamination of theepilayer. This was due to solid-state outdiffusion from thesubstrate occurring during epilayer deposition. Oxygendiffusivity values resulting from the experiments suggest amechanism scarcely influenced by the interface. Oxygen contamination is strictly related to the typeof dopant present in the substrate and not to that present in theepilayer. The oxygen contamination of the epilayer (significantin n-type substrate samples) could explain the structural defectsoften observed in epitaxial layers by different techniques.

  35. Type of paper: Paper in journal

    Title:

    Authors:
    Borghesi, A
    Piaggi, A
    Sassela, A
    Stella, A
    Pivac, Branko (67912)
    Journal: Phys. Rev. B
    ISSN: 0163-1829
    Volume: 46
    Year: 1992
    Pages: from 4123 to 4127
    Language: engleski
    Summary: High spatial resolution Fourier transform absorption measurementswere performed with polarized light on oxygen precipitates grownin silicon samples briefly annealed. We demonstrate that thewavenumber position and intensity of 1230 cm-1 absorption band,directly related to the precipitates, give information regardingstoichiometry of the oxide constituting such precipitates andtheir density. In particular, the precipitates in our samples aremade of amorphous suboxides, mainly SiO1.8, with 5 ppm local co ncentration. Moreover, our conclusions give evidence thatdisk-shaped pecipitates in silicon have the same opticalproperties of thermal oxide films with comparable thickness grownon silicon.

  36. Type of paper: Paper in journal

    Title:

    Authors:
    Borghesi, A
    Pivac, Branko (67912)
    Sassela, A
    Journal: J. Crystal Growth
    ISSN: 0022-0248
    Volume: 126
    Year: 1993
    Pages: from 63 to 69
    Language: engleski
    Summary: In this paper we report the study of early stages of oxygenprecipitation in commercial Czochralski silicon as-receivedwafers and in wafers treated at 1100 C for 80 min. The highspatial resolution infrared technique used is able to detectplatelet shaped SiO2 precipitates even, at low concentrations. Wedetect strong polarization dependence of the precipitate relatedinfrared absorption band performing measurements with linearlypolarized light. From these results a preferred orientation of aprecipitate aggregation was deduced.

  37. Type of paper: Paper in journal

    Title:

    Authors:
    Pivac, Branko (67912)
    Borghesi, A
    Geddo, M
    Sassela, A
    Stella, A
    Journal: Appl.Surf.Sci.
    ISSN: 0169-4332
    Volume: 63
    Year: 1993
    Pages: from 245 to 248
    Language: engleski
    Summary: We studied oxygen precipitation in silicon upon brief sampleannealing at 1100 C by high resolution Fourier transform infraredtechnique. This technique permits the detection of samllagglomerates of disc-shaped precipitates formed in the bulk ofannealed silicon wafers. Precipitates are characterized by a peakat 1230 cm-1 in the infrared absorption spectrum. It is furtherdemostrated that only the dick-shaped precipitates can contributeto the absorption band mentioned. Moreover, the exact wavenumberposi tion of the peak can give additional information about thechemical composiiotn of the oxide constituting the dick.

  38. Type of paper: Paper in journal

    Title:

    Authors:
    Pivac, Branko (67912)
    Borghesi, A
    Sassela, A
    Kalejs, J
    Bathey, B
    Journal: Appl.Phys.Lett.
    ISSN: 0003-6951
    Volume: 62
    Year: 1993
    Pages: from 2664 to 2666
    Language: engleski
    Summary: Gettering of Cr during the growth of silicon sheets from aCr-doped melt is observed when the solid/liquid interface regionis exposed to CO or CO2 gases. The gettering occurs within aregion about 1 Šm wide at the surface of the crystal, where alarge accumulation of carbon and oxygen is detected. Mechanismsfor carbon and oxygen precipitation in forming gettering sitesfor Cr are examined.

  39. Type of paper: Paper in journal

    Title:

    Authors:
    Pivac, Branko (67912)
    Borghesi, A
    Amiotti, M
    Sassela, A
    Journal: Materials Sci. & Eng. B
    ISSN: 0025-5416
    Volume: 18
    Year: 1993
    Pages: from 122 to 128
    Language: engleski
    Summary: Edge-defined film-fed grown polycrystalline silicon sheets areknown to contain carbon impurities in a state of extremely highsupersaturation. During very rapid growth, carbon is incorporatedwith an unusually high effective segregation coefficient close tounity; therefore it is of interest to study its microdistributionover the sheet. We performed a scanning IR absorptionmicroanalysis over macroscopic distances in order to evaluate thehomogeneity of carbon microdistribution in as-received samplesgrow n in an inert or oxidizing atmosphere, as well as on samplesannealed for 72 h in air at different temperatures, up to 1150 C.As-received samples revealed a very good homogeneity of carbondistribution, which is not even disturbed by the presence ofoxygen. However, the homogeneity of carbon microdistribution wasfound to be significantly disturbed upon annealing. This must betaken into consideration when studying the electricalcharacteristics of solar cells produced from such material uponvarious therm al treatments.

  40. Type of paper: Paper in journal

    Title:

    Authors:
    Pivac, Branko (67912)
    Journal: J. Mat. Sci. Lett.
    ISSN: 0261-8028
    Volume: 12
    Year: 1993
    Pages: from 23 to 26
    Language: engleski

  41. Type of paper: Paper in journal

    Title:

    Authors:
    Borghesi, A
    Sassela, A
    Pivac, Branko (67912)
    Pavesi, L
    Journal: Sol.St. Comm.
    ISSN: 0038-1098
    Volume: 87
    Year: 1993
    Pages: from 1 to 4
    Language: engleski
    Summary: A detailed analysis of infrared absorption spectra of poroussilicon is performed on the basisof high spatial resolutionmeasurements. Microscopic inhomogeneity and a strong influence ofstorage ambient are observed. Si atoms of the porous siliconsurrface are found to bind to H, O, C atoms and to CH3 and OHgroups. The presence of free H2O molecules is also detected.

  42. Type of paper: Paper in journal

    Title:

    Authors:
    Desnica, Uroš (9386)
    Šantić, Branko (32562)
    Desnica, Dunja (9390)
    Pavlović, Mladen
    Journal: Journal of Electronic Materials
    ISSN: 0361-5235
    Volume: 22
    Year: 1993
    Pages: from 403 to 407
    Language: engleski
    Summary: Trapping and recombination of free carriers by deep levelT3, has been studied. Occupancy of the level by electrons and dynamics of its fillingand emptying as a function of illumination with monoenergetic photons in 0.69 - 1.55 eVrange has been monitored by Thermally Stimulated Currents method. We have found that level T3 behaves more like a recombination center than like an ordinary electron trap. Besidestrapping free electrons from conduction band, this trap can also communicate with valenceband, trapping holes. Capture cross section for trapping a hole is estimated to becomparable or even larger than the capture cross section for trapping an electron. However,in many experimental conditions free electrons are generated more abundantly than freeholes, and free carrier mobility and thermal velocity are both much higher for electronsthan for holes. Therefore electron trapping often prevails, so that this frequentlydetected defect, has been up to now regularly perceived as a deep electron trap.

  43. Type of paper: Paper in journal

    Title:

    Authors:
    Šantić, Branko (32562)
    Desnica, Uroš (9386)
    Radić, Nikola (75345)
    Desnica, Dunja (9390)
    Pavlović, Mladen
    Journal: J.Appl.Phys.
    ISSN: 0021-8979
    Volume: 73
    Year: 1993
    Pages: from 5181 to 5184
    Language: engleski
    Summary: A model is proposed for the photoconductivity transients and the photo-sensitivization in semi-insulating GaAs induced by low intensity light at low temperatures. During photoconductivity transient, the lifetime of free carriers is shown to be atime-dependent quantity, determined mainly by the trapping processes,recombination being negligible. Photo-sensitivization and thermal restoration areexplained by filling and emptying of deep traps. Contrary to some other explanations, in this model it is notnecessary to utilize the metastability of EL2 or other defects. Model is verified experimentally by an original use of thermallystimulated current method. It is also possible to determine values ofcapture cross sections for dominant traps.

  44. Type of paper: Paper in journal

    Title:

    Authors:
    Gracin, Davor (82826)
    Ivanda, M
    Lugomer, S
    Desnica, Uroš (9386)
    Radić, Nikola (75345)
    Journal: Appl.Surf.Sci.
    ISSN: 0169-4332
    Volume: 70
    Year: 1993
    Pages: from 686 to 690
    Language: engleski
    Summary: The stability, optical and electrical properties of thin filmsare strongly influenced by microstructural properties. We have examined a series of a-Si:Hand a-Si1-xCx:H samples by IR and Raman spectroscopy as a function of hydrogen (5-30 at%)and carbon (0-20 at%) content. From medium and near IR measurements, the void densityand distribution of void size was estimated. It has been found that the void densityincreases, the void size distribution broadens and its mean value shifts towards highervalues as the hydrogen and carbon concentration increase. From Raman shift analysis it wasconcluded that the increase of hydrogen concentration brings about structuralrelaxation accompanied with decreasing of Si-Si bond angle deviation, while increasing of thecarbon concentration has the opposite effect.

  45. Type of paper: Paper in journal

    Title:

    Authors:
    Lugomer, S
    Maksimović, A
    Gracin, Davor (82826)
    Journal: Applied Optics
    ISSN: 0003-6935
    Volume: 32
    Year: 1993
    Pages: from 1173 to 1175
    Language: engleski
    Summary: The index of refraction of a-Si1-xCh:H thin films obtained by dcmagnetron sputtering was determinated by means of IR absorption measurement. Structuraland compositional changes that take place by increasing x make the film a mixture ofdifferent species, giving an effective value of the refractive index.

  46. Type of paper: Paper in journal

    Title:

    Authors:
    Kranjčec, Mladen (23323)
    Desnica, Dunja (9390)
    Čelustka, Branko (7946)
    Kovacs, G
    Journal: phys. stat. sol. (a)
    ISSN: 0031-8965
    Volume: 139
    Year: 1993
    Pages: from 513 to 522
    Number of references: 20
    Language: engleski
    Summary: The influence of hydrostatic pressure (up to 0.4 GPa) on optical transitions of (Ga0.3Ino.7)2Se3 in the long-wave end of the fundamentalabsorption edge has been studied at 296 K. The application of higher pressure causes an increaseof indirect optical energy gap as well as a higher transparency in the near-edge region,the emergence of step-like structure in the absorption spectrum due to the formation anddecay of free excitons, and the increase of steepness parameter ĺ of the Urbach's tail inthe exponential region. All these changes have been interpreted as a result of diminisheddisorder in the crystals.

  47. Type of paper: Paper in journal

    Title:

    Authors:
    Ivanda, M
    Furić, K
    Gamulin, O
    Peršin, Mirjana (36364)
    Gracin, Davor (82826)
    Journal: J.Appl.Phys.
    ISSN: 0021-8979
    Volume: 70
    Year: 1991
    Pages: from 4637 to 0
    Summary: Hydrogenated amorphous silicon films have been deposited by dcmagnetron puttering on different substrates with different thicknesses and hydrogenconcentration. The microscopic area of amorphous layers was crystallized by thefocused beam of a cw laser. The laser threshold power for transition from the amorphous tocrystalline state is dependent on the radius of the laser beam, film thickness,material of the substrate, and hydrogen concentration. These experimental results show that cwlaser crystallization of amorphous silicon is a thermally induced process.

  48. Type of paper: Paper in journal

    Title:

    Authors:
    Ivanda, M
    Gamulin, O
    Furić, K
    Gracin, Davor (82826)
    Journal: J.Mol.Struct.
    ISSN: 0022-2860
    Volume: 267
    Year: 1992
    Pages: from 275 to 0
    Summary: Amorphous hydrogenated silicon films prepared by a DC magnetronsputtering method was soaked by light of an argon ion laser and studied "in situ" byRaman spectroscopy in order to resolve the apparent inconsistency in the assignments of thesilicon-bond stretching vibrations. The bond-stretching frequency region between 1850 and2250 cm-1 was decomposed in two Gaussian-shaped bands. The laser-induced changes at thepower density from 20 to 500 W/cm2 show: a) the continuous increase of the integratedintensity of the band at about 2100 cm-1 compared to the band at about 2000 cm-1; thefrequency shift of both bands to the lower values; c) the linewidth decrease of the band atabout 2000 cm-1 and d) linewidth increase of the band at about 2100 cm-1. Contrary tothe previous proposals that in the stretching region of the Raman spectra only two bandsexist, our data show the existence of four vibrational bands.

  49. Type of paper: Paper in journal

    Title:

    Authors:
    Lugomer, S
    Ivanda, M
    Gracin, Davor (82826)
    Furić, K
    Maksimović, A
    Journal: J.Mol.Struct.
    ISSN: 0022-2860
    Volume: 267
    Year: 1992
    Pages: from 347 to 0
    Summary: Amorphous hydrogenated a-Si1-xCx:H thin films have been obtainedby means of DC magnetron sputtering in the benzene vapor. Comparative IR and Ramanspectroscopy study of carbon incorporation in the silicon matrix have been performed. It wasfound that carbon incorporates in the form of the CH3-groups, individual C-atomsand the C6H6 molecules.

  50. Type of paper: Paper in journal

    Title:

    Authors:
    Chenjia, C
    Borghesi, A
    Sassela, A
    Pivac, Branko (67912)
    Journal: Chin. j. Semicond.
    Volume: 13
    Year: 1992
    Pages: from 668 to 674
    Language: kineski
    Summary: Oxygen precipitation in comercial silicon Czochralski wafers isinvestigated by using the high spatial resolution Fourier transform infrared spectroscopy.With this technique we are able to detect the 1230 cm-1 absorption band due to thepresence of aggregation of single percipitates. It is found that even a temperature of 1100C for 80 min is enough to form SiO2 precipitates in platelet shape. A complete mapping ofthese wafers show that such precipitates are not disturbed homogeneously but mainly upto a distance of about 100 Šm from the back surface and from the epi-layer interface

  51. Type of paper: Paper in journal

    Title:

    Authors:
    Pivac, Branko (67912)
    Journal: Priroda
    Volume: 1
    Year: 1993
    Pages: from 34
    Language: hrvatski

  52. Type of paper: Paper in journal

    Title:

    Authors:
    Gracin, Davor (82826)
    Radić, Nikola (75345)
    Desnica, Uroš (9386)
    Andreić, Željko (96712)
    Balzar, D.
    Journal: Fizika A
    Volume: 4
    Year: 1995
    Language: engleski
    Summary: Amorphous a-Si0.85C0.15 and a_Si0.6C0.4:H alloys were deposited onto non-heated substrate using a magnetron source. The samples were exposed to a sequential iso-chronal thermal annealing up to 1000 C in a vacuum chamber, and were investigated by the IR spectroscopy and X-ray diffraction measurements. The influence of thermal treatnemt on structural ordering was monitored by the evolution of the intensity and shape of the spectral IR lines corresponding to the Si-H and Si-C bonds. At low temperatures, the most pronounced features were accompanied with hydrogen evolution which completes up to 400 C. Up to 800 C the Si-C absorption lines have gradually changed their shape, peak position and intensity. At 900 C, the abrupt changes occured, denoting final transition to crystalline state.

  53. Type of paper: Paper in journal

    Title:

    Authors:
    Pivac, Branko (67912)
    Rakvin, B
    Borghesi, A
    Sassela, A
    Journal: Fizika A
    Volume: 4
    Year: 1995
    Number of references: 18
    Language: engleski
    Summary: We studied hydrogen-rich oxynitrides deposited from nitrous oxide and silane gas mixture by a plasma enhanced chemical vapour deposition apparatuson single crystal silicon substrates. Annealing study showed that hydrogen outdiffusion depends on the film composition and is particularly retarded for oxygen content x=1.4. EPR analysis demonstrated tha this film contains the the highest concentration of D centers. Therefore, we conclude that D centers act as hydrogen traps and are responsable for the peculiar hydrogen behavior observed in the studied films.

  54. Type of paper: Paper in proceedings

    Title:

    Authors:
    Stella, A
    Borghesi, A
    Geddo, M
    Pivac, Branko (67912)
    Sassela, A
    Editors
    Feraris,
    Proceedings title: Proc.EPE-MADEP'91
    Language: engleski
    Place: Torino, Italija
    Year: 1991
    Pages: from 69 to 73
    Meeting: EPE-MADEP'91
    Held: from 09/02/91 to 09/06/91

  55. Type of paper: Paper in proceedings

    Title:

    Authors:
    Benchiguer, T
    Mari, B
    Schwab, C
    Desnica, Uroš (9386)
    Editors
    Miner, Carla
    Ford, B
    Weber, E
    Proceedings title: Proc. of 7th Int. Conf. on Semi-Insulating Materials
    Language: engleski
    Place: Bristol, Velika Britanija
    Year: 1992
    Pages: from 241 to 246
    Meeting: 7th Int. Conf. on Semi-Insulating Materials
    Held: from 04/21/92 to 04/24/92
    Summary: The time evolution of the paramagnetic signals and thephoto-current in the same semi-insulating GaAs during 1.2 eV illumination at lowtemperatures can be analysed within the same charge trasfer model. The latterinvolves neutral compensating donor-acceptor pairs becoming metastablethrough a charge exchange whose reverse process is hindered by carriertrapping. Since the same set of parameters allows one to describe thetransient behaviors in both experiments, we question the need of aconfiguration- related metastability for the common link between the deep donorEL2 and the photoquenchable AsGa observed by EPR.

  56. Type of paper: Paper in proceedings

    Title:

    Authors:
    Fornari, R
    Šantić, Branko (32562)
    Desnica, Uroš (9386)
    Proceedings title: Proc. 4th Int. Conf. on Indium Phosphide and Related Materials
    Language: engleski
    Place: Newport, USA
    Year: 1992
    Pages: from 511 to 514
    Meeting: 4th Int. Conf. on Indium Phosphide and Related Materials
    Held: from 04/21/92 to 04/24/92
    Summary: It has recently been reported that high-resistivity Fe-doped InPwafers can present very different compensation conditions. This gives riseto different mobility and conductivity characteristics. The high-resistivityInP samples can basically be assigned to three categories: (A) samples with highmobilities and thermal activation energies around 0.60 eV; (B) samples withintermediate mobilities and activation energies below 0.60eV; (C) samples withlow mobilities and activation energies around 0.40eV. Some reasons at the basisof the different physical properties exhibited by Fe-doped InP havealready been discussed. In this work, new characterization techniques wereapplied in order to investigate other deep levels beside the main deep level dueto iron.

  57. Type of paper: Paper in proceedings

    Title:

    Authors:
    Šantić, Branko (32562)
    Desnica, Uroš (9386)
    Radić, Nikola (75345)
    Desnica, Dunja (9390)
    Pavlović, Mladen
    Editors
    Miner, Carla
    Ford, B
    Weber, E
    Proceedings title: Proc. of 7th Int. Conf. on Semi-Insulating Materials
    Language: engleski
    Place: Bristol, Velika Britanija
    Year: 1993
    Pages: from 241 to 246
    Meeting: 7th Int. Conf. on Semi-Insulating Materials
    Held: from 04/21/92 to 04/24/92
    Summary: Photoconductivity transients in semi-insulating GaAs duringillumination with low intensity light are studied. By an original usage ofthermally stimulated current method, the photoconductivity transient is related to theprocess of filling of deep traps with charge carriers. A simple model isproposed which explains the observed phenomena. It is also possible to estimatethe capture cross section for dominant traps. Contrary to some previousexplanations, the metastability oe EL2 or other defects is not supposed. It isshown that deep levels, other than EL2, can play the dominant roles in lowtemperature transient phenomena. Both, the methodology and the model can be used instudy of other SI semiconductors. In appendix, the possibility of largeconcentration of traps (>NEL2) is discused.

  58. Type of paper: Paper in proceedings

    Title:

    Authors:
    Geddo, M
    Pivac, Branko (67912)
    Stella, A
    Editors
    Heise, H
    Korle, E
    Proceedings title: Proc. Series SPIE
    Language: engleski
    Place: Lubeck, Njemačka
    Year: 1992
    Pages: from 572 to 573
    Meeting: 8th Int. Conf. on Fourier Transform Spectroscopy
    Held: from 09/01/91 to 09/06/91

  59. Type of paper: Paper in proceedings

    Title:

    Authors:
    Desnica, Uroš (9386)
    Desnica, Dunja (9390)
    Šantić, Branko (32562)
    Pavlović, Mladen
    Šmuc, Tomislav
    Proceedings title: Proc. Int. Conf. on Defects in Semiconductors; Materil Science Forum,
    Language: engleski
    Year: 1994
    Pages: from 353 to 358
    Meeting: 17th Int. Conf.on Defects in Semiconductors
    Held: from 07/18/93 to 07/23/93

  60. Type of paper: Paper in proceedings

    Title:

    Authors:
    Ivanda, M
    Desnica, Uroš (9386)
    Haynes, T.E.
    Proceedings title: Proc. Int. Conf. on Defects in Semiconductors; Materials Science Forum,
    Language: engleski
    Place: Gmunden, Austrija
    Year: 1994
    Pages: from 1387 to 1390
    Meeting: 17th Int. Conf.on Defects in Semiconductors
    Held: from 07/18/93 to 07/23/93

  61. Type of paper: Paper in proceedings

    Title:

    Authors:
    Sassela, A
    Borghesi, A
    Pivac, Branko (67912)
    Pavesi, L
    Proceedings title: Proc. SPIE
    Language: engleski
    Year: 1994
    Pages: from 2089
    Meeting: 9th International Conference on Fourier Transform Spectroscopy
    Held: from 07/23/93 to 07/27/93

  62. Type of paper: Summary in proceedings

    Title:

    Authors:
    Pivac, Branko (67912)
    Borghesi, A
    Geddo, M
    Sassela, A
    Stella, A
    Proceedings title: Book of Abstracts
    Language: engleski
    Place: Bethlehem, USA
    Year: 1991
    Pages: from 230 to 0
    Meeting: 16th Int. Conf. on Defects in Semiconductors
    Held: from 06/22/91 to 06/27/91
    Summary: The quality of epitaxial silicon layers grown on Czchralskisingle crystal substrates directly influences device parameters and yield. Unintentionaldoping of these layers from the substrate has been well studied. However we found no reportson unintentional oxygen contamination of epilayers due to its presence in the substrate.The use of high spatial resolution Fourier transform infrared spectroscopy in transversalmode is shown to be a powerful technique for both oxygen profiling and precipitationstudies. A significant difference in oxygen behavior during the epitaxial layer growth,even for lightly P doped substrates, is found. Oxygen, that in some cases diffusessignificantly into the grown epitaxial layer, tends to form precipitates there. This is animportant consequence of outdiffusion, since it directly influences the quality of theepitaxial layer.

  63. Type of paper: Summary in proceedings

    Title:

    Authors:
    Urli, Natko
    Pivac, Branko (67912)
    Proceedings title: Book of Abstracts
    Language: engleski
    Place: Bethlehem, USA
    Year: 1991
    Pages: from 249 to 0
    Meeting: 16th Int. Conf. on Defects in Semiconductors
    Held: from 06/22/91 to 06/27/91
    Summary: Various EFG polycrystalline silicon ribbons, with carbonconcentration in excess of 1018 cm-3, and with large carbon to oxygen ratio, were annealedisochronally and isothermally in the temperature range from 450 to 1250 C. IR spectroscopy andDLTS measurements were used to monitor decays and growths of various carbon, oxygen andSiC microprecipitates and agglomerates. A large absorption peak at 800 cm-1, present onlyin the surface layers, has been associated with carbon-selfinterstitial-SiOx precipitatesand a broad band from 810- 960 cm-1 with SiC nanoprecipitates in the bulk. The whole seriesof bands just below the Raman frequency was attributed to vibrations of different carbonpairs. Several energy levels associated with intragrain defect complexes as well as adistribution of the grain boundary states after the thermal treatment have been detected byDLTS measurements.

  64. Type of paper: Summary in proceedings

    Title:

    Authors:
    Desnica, Uroš (9386)
    Desnica, Dunja (9390)
    Proceedings title: Book of Abstracts
    Language: engleski
    Place: Bethlehem, USA
    Year: 1991
    Pages: from 317 to 0
    Meeting: 16th Int. Conf. on Defects in Semiconductors
    Held: from 06/22/91 to 06/27/91
    Summary: Processes induced by below-the -gap illumination and relatedto defects having deep levels in Liquid Encapsulated Czochralski semi-insulating GaAscrystals were studied. It has been reported recently(1) that the dynamics of both opticalquenching and thermal recovery (above 125 K) of six deep-trap-related ThermallyStimulated Current signals was exactly the same as that of the EL2-related photoconductivitysignal. Analysis of these results gives evidence that some of observed deep traps in GaAsare complex defects, which include, as their constituent, the EL2 defect. It means that EL2can serve as a gettering center for other native defects and/or impurities. The proposedmodel is in accordance with other recently published results connecting several deeptraps (EL6, EL3, EL5 and EL14) with EL2.

  65. Type of paper: Summary in proceedings

    Title:

    Authors:
    Haynes, T.E.
    Holland, O.W.
    Desnica, Uroš (9386)
    Proceedings title: Book of Abstracts
    Language: engleski
    Place: Boston, USA
    Year: 1991
    Pages: from 0 to 0
    Meeting: MRS Fall Meeting
    Held: from 12/02/91 to 12/06/91
    Summary: Damage accumulation in Si-implanted GaAs has been characterizedby ion channeling and Raman scattering as a function of implant temperature, doseand dose rate. The damage was found to be extrmely sensitive to temperature nearroom temperature (RT), such that an implant dose of 6x10Š14Ć Si/cm2 which produceda peak damage fraction of 94% at 20C gave only a 15% damage fraction at 30C.Such a sharp damage transition obviously has important implications ofcontrolling the activation of dopants implanted at RT. One consequence is a strongdependence of the damage on dose rate near RT: the damage increase with dose rateas the dose rate is increased over nearly two orders of magnitude. Comparison ofion channeling results with Raman scattering measurements indicates that themorfologies of the dose-rate-dependent and dose-dependent damage components inRT implants are distinct, i. e., the rate-dependent component primarilyconsists of crystalline defects, while the dose-dependent damage has a largeamorphous contribution. hese experimental observations are discussed in terms of thecompetition between different damage nucleation and growth mechanisms as a functionof the implant parameters.

  66. Type of paper: Summary in proceedings

    Title:

    Authors:
    Sassela, A
    Geddo, M
    Borghesi, A
    Pivac, Branko (67912)
    Proceedings title: Con.Ann. GNSM del CNR
    Language: talijanski
    Place: Rim, Italija
    Year: 1991
    Pages: from 33 to 0
    Meeting: Con.Ann.GNSM
    Held: from 05/15/91 to 05/16/91

  67. Type of paper: Summary in proceedings

    Title:

    Authors:
    Geddo, M
    Pivac, Branko (67912)
    Stella, A
    Proceedings title: Book of Abstracts
    Language: engleski
    Place: Lubeck, Njemačka
    Year: 1991
    Pages: from 0 to 0
    Meeting: 8th Int. Conf. on Fourier Transform Spectroscopy
    Held: from 09/01/91 to 09/06/91

  68. Type of paper: Summary in proceedings

    Title:

    Authors:
    Stella, A
    Borghesi, A
    Geddo, M
    Pivac, Branko (67912)
    Sassela, A
    Proceedings title: Book of Abstracts
    Language: engleski
    Place: Firenza, Italija
    Year: 1991
    Pages: from 0 to 0
    Meeting: EPE-MADEP'91
    Held: from 09/02/91 to 09/06/91

  69. Type of paper: Summary in proceedings

    Title:

    Authors:
    Gracin, Davor (82826)
    Kramarić, Z
    Radić, Nikola (75345)
    Proceedings title: Spektroskopija v teoriji i praksi
    Place: Bled, Slovenija
    Year: 1991
    Pages: from 0 to 0
    Meeting: 7. Simpozij "Spektroskopija v teoriji in praksi"
    Held: from 04/16/91 to 04/19/91
    Summary: Metodom rasprašenja formirani su tanki slojevi amorfnoghidrogeniziranog silicija na poliranom monokristalu silicija, uz različite uvjete depozicije.Iz mjerenja apsorpcije uzoraka u području 400-4000 cm-1 Perkin Elmer 1710 FTIRspektrometrom, određena je spektralna raspodjela koeficjenta apsorpcije koristeći standardnemetode. Dio spektra koji odgovara vibracijama istezanja Si-H veza je razložen u komponentemetodom najmanjih kvadrata uz pretpostavku Gauss-ovske raspodjele intenzitetalinija u okolini poznatih položaja maksimuma za SiH1, SiH2 i SiH3 veza. Pokazano je da semaksimumi apsorpcije pomiču prema većim valnim brojevima sa porastom ukupnekoncentracije vodika. Rezultat je objašnjen promjenom lokalnog polja u okolini Si-H oscilatora dokoje dolazi zbog povećanja broja šupljina i promjene njihove popunjenosti vodikom.

  70. Type of paper: Summary in proceedings

    Title:

    Authors:
    Ivanda, M
    Furić, K
    Gamulin, O
    Gracin, Davor (82826)
    Proceedings title: 14th Int. Conf. on Amorphous Semiconductors-Science and Technology
    Language: engleski
    Place: Garmish-Partenkirchen, Njemačka
    Year: 1991
    Pages: from 51 to 51
    Meeting: 14th Int.Conf on Amorphous Semiconductors-Science and Technology
    Held: from 08/19/91 to 08/23/91
    Summary: Amorphous hydrogenated silicon films were prepared by a dcmagnetron sputtering method. Broad background signal observed in Raman spectra near theexcitation line have been recently attributed to the recombination of nonthermal electronswith nonthermal holes. Bay applaying the procedure proposed by Malinovsky and supposingthe fractal density of state, the bacground was decoposed from the phonon bands. TheStokes/anti-Stokes ratio, depolarization ratio and the shape of the background signal havethe characteristics typical for the "boson" peak in glasses. Changes observed in the"boson" peak depending on the hydrogen concentration and laser annealing are compared todifferent models.

  71. Type of paper: Summary in proceedings

    Title:

    Authors:
    Pivac, Branko (67912)
    Borghesi, A
    Geddo, M
    Sassela, A
    Proceedings title: Journees Surfaces et Interfaces
    Place: Sophia Antipolis, Francuska
    Year: 1992
    Pages: from 60 to 0
    Meeting: Journees Surfaces et Interfaces
    Held: from 01/30/92 to 01/31/92

  72. Type of paper: Summary in proceedings

    Title:

    Authors:
    Desnica, Uroš (9386)
    Ivanda, M
    Haynes, T.E.
    Holland, O.W.
    Proceedings title: Sažeci Institut za fiziku Sveučilišta
    Language: hrvatski
    Place: Zagreb
    Year: 1992
    Pages: from 17 to 0
    Meeting: IV. Konferencija iz atomske i molekularne fizike i fizike čvrstog stanja
    Held: from 02/17/92 to 02/19/92
    Summary: Monokristalinični uzorci GaAs implantirani su ionima silicijaenergije 100 odnosno 170 keV, te je istraživano oštećenje kristalne rešetke kaofunkcija ionske doze, brzine doze (gustoće struje Si iona) te temperature implantacije.Implantacijom izazvano oštećenje rešetke istraživano je komparacijom Ramanskograspršenja, koje je prvenstveno osjetljivo na amorfizaciju kristala, i Rutherfordovograspršenja (RBS), koje je posebno osjetljivo na točkaste i druge defekte malog volumena ukristaliničnoj frakciji implantiranog sloja. Obe metode pokazuju da sa povećanjemionske doze dolazi do sve većeg oštećenja bombardirane površine, tako da čitavimplantirani sloj postaje amorfan za doze iznad 1x1015/cm2. U analizi efekata brzine doze naizazvano oštećenje, pokazano je da s većom brzinom doze dolazi prvenstveno do većeg neredau kristaliničnoj frakciji sloja, dok se relativni volumen amorfne frakcije povećava tekneznatno. Oštećenja izazvana ionskim bombardiranjem izuzetno su osjetljiva i namale promjene temperature implantacije: na pr. ionska doza od 6x1014Si/cm2 izazivagotovo kompletnu amorfizaciju sloja (oštećenje od 94% u maksimumu RBS signala)za temperaturu implanacije 20oC, dok se to oštećenje smanjuje na samo 15%ukoliko se temperatura implantacija povisi za 10oC. Ovako izrazita temperaturnaovisnost očito ima važne praktične implikacije na

  73. Type of paper: Summary in proceedings

    Title:

    Authors:
    Gracin, Davor (82826)
    Ivanda, M
    Radić, Nikola (75345)
    Desnica, Uroš (9386)
    Proceedings title: Sažeci IFS
    Language: hrvatski
    Place: Zagreb
    Year: 1992
    Pages: from 13 to 0
    Meeting: IV. Konferencija iz atomske i molekularne fizike i fizike čvrstog stanja
    Held: from 02/17/92 to 02/19/92
    Summary: Tankim filmovima amorfnog hidrogeniziranog silicija (0.8-1.2 Šm )formiranim magnetronskim rasprašenjem, mjerena je spektralna distribucija koeficjentaapsorpcije u području 400- 10000 cm-1. Pokazano je da se maksimumi apsorpcije kojiodgovaraju vibracijama istezanja Si-H veza pomiču prema većim valnim brojevima sa porastom ukupnekoncentracije vodika. Rezultat je objašnjen promjenom lokalnog polja u okolini Si-Hoscilatora do kojeg dolazi zbog povećanja koncentracije i dimenzije šupljina te promjenenjihove popunjenosti vodikom.

  74. Type of paper: Summary in proceedings

    Title:

    Authors:
    Borghesi, A
    Pivac, Branko (67912)
    Sassela, A
    Proceedings title: Book of abstracts
    Language: engleski
    Place: Smolence, Čehoslovačka
    Year: 1992
    Pages: from 7 to 0
    Meeting: International Workshop "Characterization of semiconductor substrates and structures
    Held: from 04/01/92 to 04/04/92

  75. Type of paper: Summary in proceedings

    Title:

    Authors:
    Borghesi, A
    Giuzzetti, G
    Piaggi, A
    Sassela, A
    Stella, A
    Pivac, Branko (67912)
    Proceedings title: Book of Abstracts
    Language: engleski
    Place: Prag, Čehoslovačka
    Year: 1992
    Pages: from 281 to 0
    Meeting: 12th General Conference on Condensed Matter Division of EPS
    Held: from 04/06/92 to 04/09/92

  76. Type of paper: Summary in proceedings

    Title:

    Authors:
    Fornari, R
    Šantić, Branko (32562)
    Desnica, Uroš (9386)
    Proceedings title: Book of abstracts
    Language: engleski
    Place: Bristol, Velika Britanija
    Year: 1992
    Pages: from 0 to 0
    Meeting: 4th Int. Conf. on Indium Phosphide and Related Materials
    Held: from 04/18/92 to 04/24/92
    Summary: It has recently been reported that high-resistivity Fe-doped InPwafers can present very different compensation conditions. This gives riseto different mobility and conductivity characteristics. The high-resistivityInP samples can basically be assigned to three categories: (A) samples with highmobilities and thermal activation energies around 0.60 eV; (B) samples withintermediate mobilities and activation energies below 0.60eV; (C) samples withlow mobilities and activation energies around 0.40eV. Some reasons at the basisof the different physical properties exhibited by Fe-doped InP havealready been discussed. In this work, new characterization techniques wereapplied in order to investigate other deep levels beside the main deep level dueto iron.

  77. Type of paper: Summary in proceedings

    Title:

    Authors:
    Benchiguer, T
    Mari, B
    Schwab, C
    Desnica, Uroš (9386)
    Proceedings title: Book of Abstracts
    Language: engleski
    Place: Ixtapa, Mexico
    Year: 1992
    Pages: from 0 to 0
    Meeting: 7th Int. Conf. on Semi-Insulating Materials
    Held: from 04/21/92 to 04/24/92
    Summary: The time evolution of the paramagnetic signals and thephoto-current in the same semi-insulating GaAs during 1.2 eV illumination at lowtemperatures can be analysed within the same charge trasfer model. The latterinvolves neutral compensating donor-acceptor pairs becoming metastablethrough a charge exchange whose reverse process is hindered by carriertrapping. Since the same set of parameters allows one to describe thetransient behaviors in both experiments, we question the need of aconfiguration- related metastability for the common link between the deep donorEL2 and the photoquenchable AsGa observed by EPR.

  78. Type of paper: Summary in proceedings

    Title:

    Authors:
    Šantić, Branko (32562)
    Desnica, Uroš (9386)
    Radić, Nikola (75345)
    Desnica, Dunja (9390)
    Pavlović, Mladen
    Proceedings title: Book of Abstracts
    Language: engleski
    Place: Ixtapa, Mexico
    Year: 1992
    Pages: from 0 to 0
    Meeting: 7th Int. Conf. on Semi-Insulating Materials
    Held: from 04/21/92 to 04/24/92
    Summary: A model is proposed for the photoconductivity transients and the photo-sensitivization in semi-insulating GaAs induced by low intensity light at low temperatures. During photoconductivity transient, the lifetime of free carriers is shown to be atime-dependent quantity, determined mainly by the trapping processes,recombination being negligible. Photo-sensitivization and thermal restoration areexplained by filling and emptying of deep traps. Contrary to some other explanations, in this model it is notnecessary to utilize the metastability of EL2 or other defects. Model is verified experimentally by an original use of thermallystimulated current method. It is also possible to determine values ofcapture cross sections for dominant traps.

  79. Type of paper: Summary in proceedings

    Title:

    Authors:
    Borghesi, A
    Geddo, M
    Giuzzetti, G
    Pivac, Branko (67912)
    Sassela, A
    Stella, A
    Proceedings title: Abstracts of posters
    Language: engleski
    Place: Badia di S. Andrea, Italija
    Year: 1992
    Pages: from 3 to 43
    Meeting: 12th General Conference on Condensed Matter Division of EPS
    Held: from 06/01/92 to 06/05/92

  80. Type of paper: Summary in proceedings

    Title:

    Authors:
    Pivac, Branko (67912)
    Borghesi, A
    Geddo, M
    Sassela, A
    Stella, A
    Proceedings title: Book of Abstracts
    Language: engleski
    Place: Strasbourg, Francuska
    Year: 1992
    Pages: from 12 to 0
    Meeting: E-MRS 1992 Spring Meeting
    Held: from 06/02/92 to 06/05/92

  81. Type of paper: Summary in proceedings

    Title:

    Authors:
    Borghesi, A
    Geddo, M
    Pivac, Branko (67912)
    Sassela, A
    Stella, A
    Proceedings title: Book of abstracts
    Language: engleski
    Place: Peking, Kina
    Year: 1992
    Pages: from 6 to 0
    Meeting: 21st Int. Conf. on Physics of semiconductors
    Held: from 09/10/92 to 09/14/92

  82. Type of paper: Summary in proceedings

    Title:

    Authors:
    Gracin, Davor (82826)
    Radić, Nikola (75345)
    Proceedings title: Book of Abstracts
    Language: engleski
    Place: Hague, Nizozemska
    Year: 1992
    Pages: from 0 to 0
    Meeting: 12th INT. VACUUM CONGRESS(VC-12),8th INT.CONF. ON SOLID SURFACES(ICSS-8)
    Held: from 10/12/92 to 10/16/92

  83. Type of paper: Summary in proceedings

    Title:

    Authors:
    Gracin, Davor (82826)
    Radić, Nikola (75345)
    Desnica, Uroš (9386)
    Proceedings title: Sažeci
    Language: hrvatski
    Place: Zagreb
    Year: 1993
    Pages: from 2 to 2
    Meeting: 1. Susret vakuumista Hrvatske i Slovenije
    Held: from 04/21/93 to 04/21/93
    Summary: Tanki filmovi amorfnog hidrogeniziranog silicij karbida (.8-1.2mikrometara), formirani su DC magnetronskim rasprašenjem. Kao radni plin korištena je smjesaargona, vodika i benzenskih para. Uzorcima je mjerena spektralna distribucijakoeficjenta apsorpcije i indeksa loma u području 400-10000 cm-1 kao funkcija koncentracijevezanog vodika (5-20 at%) i ugljika (x=.1-.4) u sloju. Za male koncentracije ugljika,do x=0.2, ugljik se ugrađuje pretežno u obliku Si4-C veza. Za veće koncentracijeugljika pojavljuju se C-C i C-Hx (x=1,2,3) veze. Na temelju analize vibracija istezanja Si-Hveza procijenjena je koncentracija šupljina u slojevima i njihova distribucija.

  84. Type of paper: Summary in proceedings

    Title:

    Authors:
    Ivanda, M
    Gracin, Davor (82826)
    Lugomer, S
    Furić, K
    Gamulin, O
    Proceedings title: Sažeci
    Language: hrvatski
    Place: Zagreb
    Year: 1993
    Pages: from 6 to 6
    Meeting: 1. Susret vakuumista Hrvatske i Slovenije
    Held: from 04/21/93 to 04/21/93
    Summary: Gustoća fononskih stanja u staklastim materijalima je znatno većaod vrijednosti koja se očekuje na osnovi Debayevog modela. jedna od manifestacija ovog"viška" vibracijskih modova je pojava tzv. "bozonske vrpce" u niskofrekventnom dijeluRamanovih spektara. Ovdje ćemo prikazati sistematsku studiju širokog pozadinskog signala uRamanovim spektrima hidrogeniziranog amorfnog silicija (a-Si:H). Signal do sada nijeopažen niti u jednoj računskoj simulaciji fononske gustoće stanja i Ramanovihspektara, a ima svojstva "bozonske vrpce". Dobiveni depolarizacijski spektar i frekventnaovisnost signala ukazuju na mogućnost Ramanovog raspršenja na fraktalnoj strukturi, što jeu skladu sa dosadašnjim teorijskim razmatranjima koja govore o mogućnosti fraktalnograsta amorfnog silicija. Primjenili smo teoriju Ramanovog raspršenja na fraktalnimstrukturama za objašnjenje signala. Teorija se pokazala u potpunosti konzistentnom sopaženim vrijednostima. Zbunjujuće djeluje mali prostorni doseg fraktala od ÷6 A, što bise moglo objasniti fraktalnošću konstanti sila, odnosno fraktalnom strukturomenergetskih stanja Si atoma u konfiguracijskom prostoru. Istražujući ovisnost o koncentracijivezanog ugljika i vodika, pokazali smo sa intenzitet pozadinskog signala raste znatno bržes koncentracijom ugljika nego s koncentracijom vodika, što se u fraktalnoj interpretacijimože povezati s relativno većim unutarnjim naprezanjima koje izaziva vezanje ugljika.

  85. Type of paper: Summary in proceedings

    Title:

    Authors:
    Pivac, Branko (67912)
    Borghesi, A
    Sassela, A
    Proceedings title: Sažeci
    Language: hrvatski
    Place: Zagreb
    Year: 1993
    Pages: from 6 to 6
    Meeting: 1. Susret vakuumista Hrvatske i Slovenije
    Held: from 04/21/93 to 04/21/93

  86. Type of paper: Summary in proceedings

    Title:

    Authors:
    Ivanda, M
    Desnica, Uroš (9386)
    Haynes, T.E.
    Holland, O.W.
    Proceedings title: Program and Abstracts
    Language: engleski
    Place: Gmunden, Austrija
    Year: 1993
    Pages: from 93 to 93
    Meeting: 17th Int. Conf.on Defects in Semiconductors
    Held: from 07/18/93 to 07/23/93

  87. Type of paper: Summary in proceedings

    Title:

    Authors:
    Desnica, Uroš (9386)
    Desnica, Dunja (9390)
    Šantić, Branko (32562)
    Pavlović, Mladen
    Šmuc, Tomislav
    Proceedings title: Program and Abstracts
    Language: engleski
    Place: Gmunden, Austrija
    Year: 1993
    Pages: from 130 to 130
    Meeting: 17th Int. Conf.on Defects in Semiconductors
    Held: from 07/18/93 to 07/23/93
    Summary: Besides their contribution to the charge balance in semi-insulating (SI) GaAs, defects with deep levels in the forbidden energy gap also play an important role in low- temperature transient phenomena. Level labeled T3 seems to beespecially interesting and important as: a) It has been observed in Thermally StimulatedCurrent (TSC) measurements or Photo-Induced Transient Spectroscopy (PITS) in SI materialsof very different origins by a number of authors, b) It is most often the deep levelwith the largest TSC peak, indicating its relatively large concentration among defectswith deep levels. It is probably the same level observed also in a more conductive GaAs (mostly by Deep Level Transient Spectroscopy) and labeled EL8 or ET2. However, thesign of T3 trap is still controversial: in most papers it is declared an electron trap,but some claim it to be a hole trap. In this paper, properties of this important defect wereinvestigated in detail. Electronic properties: The electron capture cross section, ĺn,is relatively low (in the 10-17cm-2 range). It is shown here for the first time that itshole capture cross section ĺp is not negligible; in fact it is of the same order ofmagnitude as ĺn. Therefore, in experiments where predominantly free electrons are generatedT3 behaves as an electron trap, while in excess of holes it behaves as a hole trap. Thisfinding may nicely explain apparent discrepancy in previous papers about its trappingproperties, as T3 shows either "n" or "p" trapping properties depending on experimentalconditions. Analogous properties were observed earlier for some impurities (gold, platinum etc.) in Silicon. As T3 communicates with both conduction and valence band (albeit viaquite small both ĺn and ĺp), its more proper qualification would be a slowrecombination center, rather than a deep trap. Comparable values of ĺn and ĺp would suggest theposition of the trap near the middle of the band gap. However, the activation energycorresponding to the T3 peak is Ec-0.27 + 0.04 eV, being much closer to the conductive band.Similar comunication with both band, despites assimetry of the level position, hasbeen observed in Silicon for specific impurities, like platinum. Microscopic properties: We present additional evidences that T3is a complex defect which includes EL2 as its main constituent. TSC peak hight depends onEL2 concentration, being lower in SI GaAs grown in Ga-rich melt. T3 shows metastability, with properties very similar to EL2: its TSC peak can be completely quenched at lowtemperature with photons in the 1-1.3 eV photon energy range. After IR quenching, bothoptical and thermal recovery is possible by heating sample to cca 140K. Furthermore, spectral dependance of low- temperature optical cross sections are similar to these of EL2,giving further evidence of the connection between defect responsible to T3 peak and EL2defect.

  88. Type of paper: Summary in proceedings

    Title:

    Authors:
    Sassela, A
    Borghesi, A
    Pivac, Branko (67912)
    Pavesi, L
    Proceedings title: Book of abstracts Proc. SPIE,2089, 266 (1994)
    Language: engleski
    Place: Washington, USA
    Year: 1994
    Pages: from 266 to 267
    Meeting: 9th International Conference on Fourier Transform Spectroscopy
    Held: from 07/23/93 to 07/27/93
    Summary: Infrared absorption of luminescent porous silicon has been measured with high spatial resolution to study the local chemical composition. A few typical spectra, which evidence the presence of impurities such as H, O, and C in different bonding configurations, have been selected as the most significant and anlysed.

  89. Type of paper: Ph.D.

    Title: Short and medium range ordering of amorphous silicon alloys
    Faculty: Prirodoslovno-matematiČki Zagreb
    Author: GRACIN DAVOR
    Date of defense: 11/24/93
    Language: hrvatski
    Number of pages: 120


  90. Type of paper: Ph.D.

    Title: Some Structural, Optical and Photoelectical Properties of š1(GaxIn1-x)2Se3
    Faculty: Prirodoslovno-matematiČki Zagreb
    Author: KRANJČEC MLADEN
    Date of defense: 09/17/93
    Language: hrvatski
    Number of pages: 253


  91. Type of paper: M.A.

    Title:
    Faculty: Prirodoslovno-matematiČki Zagreb
    Author: PAVLOVIĆ MLADEN
    Date of defense: 06/17/94
    Language: hrvatski
    Number of pages: 98


  92. Type of paper: Mentorship

    Title:
    Faculty: Prirodoslovno-matematiČki Zagreb
    Mentor: DESNICA UROŠ
    Date of defense: 11/24/93
    Number of pages: 120
    Author: Gracin Davor
    Degree level: Ph.D.


  93. Type of paper: Mentorship

    Title:
    Faculty: Prirodoslovno-matematiČki Zagreb
    Mentor: ČELUSTKA BRANKO
    Date of defense: 07/29/93
    Number of pages: 253
    Author: Kranjčec Mladen
    Degree level: Ph.D.


  94. Type of paper: Mentorship

    Title:
    Faculty: Prirodoslovno-matematiČki Zagreb
    Mentor: DESNICA UROŠ
    Date of defense: 06/17/94
    Number of pages: 98
    Author: Pavlović Mladen
    Degree level: M.A.


  95. Type of paper: Invited lecture

    Title:
    Institution: 11th General Conference of the Condensed Matter Division, Exeter, U. K. 8-11. 04. 1991.
    Year: 1991


  96. Type of paper: Invited lecture

    Title:
    Institution: E-MRS Spring Meeting 1995, Strasbourg, Francuska, 22.-26. 05. 1995.
    Year: 1995


  97. Type of paper: Invited lecture

    Title:
    Institution: 11th General Conference of the Condensed Matter Division, Exeter, U. K. 8-11. 04. 1991.


  98. Type of paper: Invited lecture

    Title:



MZT Croatian language SVIBOR Alphabetic list Sorted on project code Sorted on institutions Search help
Ministry of
Science and
Technology
Croatian
language
Svibor
homepage
Alphabetic
list
Sorted on
project code
Sorted on
institutions
Search Help

Information: svibor@znanost.hr