Type of paper: Paper in journal
Title:
- Authors:
- Borghesi, A
- Pivac, Branko (67912)
- Sassela, A
Journal: Appl.Phys.Lett.
ISSN: 0003-6951
Volume: 60
Year: 1992
Pages: from 871 to 873
Language: engleski
Summary:
High-spatial resolution Fourier transform infrared spectroscopypermitted us
to study the effects of incident light polarizationon the absorption band
related to aggregates of SiO2 disk shapedprecipitates present in annealed
(100) Czochralski siliconsamples. This is the first report documenting the
strongdependence of such a band intensity on light
polarization.Experimental results were compared with the simulation
obtainedusing the effective medium theory. From this comparison we
deducethat the prec
ipitates only lie on the planes among (100) which are parallel tothe wafer
surface. This result can be related to the differencebetween the <100>
direction and those crystallographicallyequivalent, introduced by the ingot
growth process.
Type of paper: Paper in journal
Title:
- Authors:
- Pivac, Branko (67912)
- Borghesi, A
- Geddo, M
- Sassela, A
- Pedrotti, M
Journal: Materials Sci. & Eng. B
ISSN: 0025-5416
Volume: 15
Year: 1992
Pages: from 32 to 36
Language: engleski
Summary: Boron accumulation was observed close to the interface
between anepitaxially grown silicon layer and a silicon substrate wafer
andthen analyzed. It was concluded that boron contaminationinteracting with
the surface oxide on wafers led to boronaccumulation close to the
interface. Such accumulation is shownto occur for epilayers of standard
thickness (approximately 10Šm), with boron being electrically unactive.
Type of paper: Paper in journal
Title:
- Authors:
- Geddo, M
- Pivac, Branko (67912)
- Sassela, A
- Stella, A
- Borghesi, A
- Maierna, A
Journal: J.Appl.Phys.
ISSN: 0021-8979
Volume: 72
Year: 1992
Pages: from 4313 to 4320
Language: engleski
Summary: Interstitial oxygen profile across an epitaxial silicon
andCzochralski silicon interface has been studied
usinghigh-spatial-resolution Fourier transform infrared
spectroscopy.Systematic transmission measurements performed on a
transversalwafer cross section evidenced oxygen contamination of
theepilayer. This was due to solid-state outdiffusion from thesubstrate
occurring during epilayer deposition. Oxygendiffusivity values resulting
from the experiments suggest amechanism scarcely influenced by the
interface. Oxygen contamination is strictly related to the typeof dopant
present in the substrate and not to that present in theepilayer. The oxygen
contamination of the epilayer (significantin n-type substrate samples)
could explain the structural defectsoften observed in epitaxial layers by
different techniques.
Type of paper: Paper in journal
Title:
- Authors:
- Borghesi, A
- Piaggi, A
- Sassela, A
- Stella, A
- Pivac, Branko (67912)
Journal: Phys. Rev. B
ISSN: 0163-1829
Volume: 46
Year: 1992
Pages: from 4123 to 4127
Language: engleski
Summary: High spatial resolution Fourier transform absorption
measurementswere performed with polarized light on oxygen precipitates
grownin silicon samples briefly annealed. We demonstrate that thewavenumber
position and intensity of 1230 cm-1 absorption band,directly related to the
precipitates, give information regardingstoichiometry of the oxide
constituting such precipitates andtheir density. In particular, the
precipitates in our samples aremade of amorphous suboxides, mainly SiO1.8,
with 5 ppm local co
ncentration. Moreover, our conclusions give evidence thatdisk-shaped
pecipitates in silicon have the same opticalproperties of thermal oxide
films with comparable thickness grownon silicon.
Type of paper: Paper in journal
Title:
- Authors:
- Borghesi, A
- Pivac, Branko (67912)
- Sassela, A
Journal: J. Crystal Growth
ISSN: 0022-0248
Volume: 126
Year: 1993
Pages: from 63 to 69
Language: engleski
Summary: In this paper we report the study of early stages of
oxygenprecipitation in commercial Czochralski silicon as-receivedwafers and
in wafers treated at 1100 C for 80 min. The highspatial resolution infrared
technique used is able to detectplatelet shaped SiO2 precipitates even, at
low concentrations. Wedetect strong polarization dependence of the
precipitate relatedinfrared absorption band performing measurements with
linearlypolarized light. From these results a preferred orientation of
aprecipitate
aggregation was deduced.
Type of paper: Paper in journal
Title:
- Authors:
- Pivac, Branko (67912)
- Borghesi, A
- Geddo, M
- Sassela, A
- Stella, A
Journal: Appl.Surf.Sci.
ISSN: 0169-4332
Volume: 63
Year: 1993
Pages: from 245 to 248
Language: engleski
Summary: We studied oxygen precipitation in silicon upon brief
sampleannealing at 1100 C by high resolution Fourier transform
infraredtechnique. This technique permits the detection of
samllagglomerates of disc-shaped precipitates formed in the bulk ofannealed
silicon wafers. Precipitates are characterized by a peakat 1230 cm-1 in the
infrared absorption spectrum. It is furtherdemostrated that only the
dick-shaped precipitates can contributeto the absorption band mentioned.
Moreover, the exact wavenumberposi
tion of the peak can give additional information about thechemical
composiiotn of the oxide constituting the dick.
Type of paper: Paper in journal
Title:
- Authors:
- Pivac, Branko (67912)
- Borghesi, A
- Sassela, A
- Kalejs, J
- Bathey, B
Journal: Appl.Phys.Lett.
ISSN: 0003-6951
Volume: 62
Year: 1993
Pages: from 2664 to 2666
Language: engleski
Summary: Gettering of Cr during the growth of silicon sheets from
aCr-doped melt is observed when the solid/liquid interface regionis exposed
to CO or CO2 gases. The gettering occurs within aregion about 1 Šm wide at
the surface of the crystal, where alarge accumulation of carbon and oxygen
is detected. Mechanismsfor carbon and oxygen precipitation in forming
gettering sitesfor Cr are examined.
Type of paper: Paper in journal
Title:
- Authors:
- Pivac, Branko (67912)
- Borghesi, A
- Amiotti, M
- Sassela, A
Journal: Materials Sci. & Eng. B
ISSN: 0025-5416
Volume: 18
Year: 1993
Pages: from 122 to 128
Language: engleski
Summary: Edge-defined film-fed grown polycrystalline silicon sheets
areknown to contain carbon impurities in a state of extremely
highsupersaturation. During very rapid growth, carbon is incorporatedwith
an unusually high effective segregation coefficient close tounity;
therefore it is of interest to study its microdistributionover the sheet.
We performed a scanning IR absorptionmicroanalysis over macroscopic
distances in order to evaluate thehomogeneity of carbon microdistribution
in as-received samplesgrow
n in an inert or oxidizing atmosphere, as well as on samplesannealed for 72
h in air at different temperatures, up to 1150 C.As-received samples
revealed a very good homogeneity of carbondistribution, which is not even
disturbed by the presence ofoxygen. However, the homogeneity of carbon
microdistribution wasfound to be significantly disturbed upon annealing.
This must betaken into consideration when studying the
electricalcharacteristics of solar cells produced from such material
uponvarious therm
al treatments.
Type of paper: Paper in journal
Title:
- Authors:
- Pivac, Branko (67912)
Journal: J. Mat. Sci. Lett.
ISSN: 0261-8028
Volume: 12
Year: 1993
Pages: from 23 to 26
Language: engleski
Type of paper: Paper in journal
Title:
- Authors:
- Borghesi, A
- Sassela, A
- Pivac, Branko (67912)
- Pavesi, L
Journal: Sol.St. Comm.
ISSN: 0038-1098
Volume: 87
Year: 1993
Pages: from 1 to 4
Language: engleski
Summary: A detailed analysis of infrared absorption spectra of
poroussilicon is performed on the basisof high spatial
resolutionmeasurements. Microscopic inhomogeneity and a strong influence
ofstorage ambient are observed. Si atoms of the porous siliconsurrface are
found to bind to H, O, C atoms and to CH3 and OHgroups. The presence of
free H2O molecules is also detected.
Type of paper: Paper in journal
Title:
- Authors:
- Desnica, Uroš (9386)
- Šantić, Branko (32562)
- Desnica, Dunja (9390)
- Pavlović, Mladen
Journal: Journal of Electronic Materials
ISSN: 0361-5235
Volume: 22
Year: 1993
Pages: from 403 to 407
Language: engleski
Summary: Trapping and recombination of free carriers by deep
levelT3, has been studied.
Occupancy of the level by electrons and dynamics of its fillingand emptying
as a function
of illumination with monoenergetic photons in 0.69 - 1.55 eVrange has
been monitored by
Thermally Stimulated Currents method. We have found that level T3 behaves
more like a
recombination center than like an ordinary electron trap. Besidestrapping
free electrons
from conduction band, this trap can also communicate with valenceband,
trapping holes.
Capture cross section for trapping a hole is estimated to becomparable or
even larger
than the capture cross section for trapping an electron. However,in many
experimental
conditions free electrons are generated more abundantly than freeholes, and
free carrier
mobility and thermal velocity are both much higher for electronsthan for
holes. Therefore
electron trapping often prevails, so that this frequentlydetected defect,
has been up to
now regularly perceived as a deep electron trap.
Type of paper: Paper in journal
Title:
- Authors:
- Šantić, Branko (32562)
- Desnica, Uroš (9386)
- Radić, Nikola (75345)
- Desnica, Dunja (9390)
- Pavlović, Mladen
Journal: J.Appl.Phys.
ISSN: 0021-8979
Volume: 73
Year: 1993
Pages: from 5181 to 5184
Language: engleski
Summary: A model is proposed for the photoconductivity transients
and the photo-sensitivization in semi-insulating GaAs induced by
low intensity light at low temperatures. During photoconductivity
transient, the lifetime of free carriers is shown to be atime-dependent
quantity, determined mainly by the trapping processes,recombination being
negligible. Photo-sensitivization and thermal restoration areexplained by
filling and emptying of deep traps.
Contrary to some other explanations, in this model it is notnecessary
to utilize the metastability of EL2 or other defects.
Model is verified experimentally by an original use of thermallystimulated
current method. It is also possible to determine values ofcapture
cross sections for dominant traps.
Type of paper: Paper in journal
Title:
- Authors:
- Gracin, Davor (82826)
- Ivanda, M
- Lugomer, S
- Desnica, Uroš (9386)
- Radić, Nikola (75345)
Journal: Appl.Surf.Sci.
ISSN: 0169-4332
Volume: 70
Year: 1993
Pages: from 686 to 690
Language: engleski
Summary: The stability, optical and electrical properties of thin
filmsare strongly influenced by
microstructural properties. We have examined a series of a-Si:Hand
a-Si1-xCx:H samples by
IR and Raman spectroscopy as a function of hydrogen (5-30 at%)and carbon
(0-20 at%)
content. From medium and near IR measurements, the void densityand
distribution of void
size was estimated. It has been found that the void densityincreases, the
void size
distribution broadens and its mean value shifts towards highervalues as the
hydrogen and
carbon concentration increase. From Raman shift analysis it wasconcluded
that the
increase of hydrogen concentration brings about structuralrelaxation
accompanied with
decreasing of Si-Si bond angle deviation, while increasing of thecarbon
concentration has
the opposite effect.
Type of paper: Paper in journal
Title:
- Authors:
- Lugomer, S
- Maksimović, A
- Gracin, Davor (82826)
Journal: Applied Optics
ISSN: 0003-6935
Volume: 32
Year: 1993
Pages: from 1173 to 1175
Language: engleski
Summary: The index of refraction of a-Si1-xCh:H thin films obtained
by dcmagnetron sputtering was
determinated by means of IR absorption measurement. Structuraland
compositional changes
that take place by increasing x make the film a mixture ofdifferent
species, giving an
effective value of the refractive index.
Type of paper: Paper in journal
Title:
- Authors:
- Kranjčec, Mladen (23323)
- Desnica, Dunja (9390)
- Čelustka, Branko (7946)
- Kovacs, G
Journal: phys. stat. sol. (a)
ISSN: 0031-8965
Volume: 139
Year: 1993
Pages: from 513 to 522
Number of references: 20
Language: engleski
Summary: The influence of hydrostatic pressure (up to 0.4
GPa) on optical transitions of
(Ga0.3Ino.7)2Se3 in the long-wave end of the fundamentalabsorption edge
has been studied
at 296 K. The application of higher pressure causes an increaseof indirect
optical energy
gap as well as a higher transparency in the near-edge region,the
emergence of step-like
structure in the absorption spectrum due to the formation anddecay of free
excitons, and
the increase of steepness parameter ĺ of the Urbach's tail inthe
exponential region. All
these changes have been interpreted as a result of diminisheddisorder in
the crystals.
Type of paper: Paper in journal
Title:
- Authors:
- Ivanda, M
- Furić, K
- Gamulin, O
- Peršin, Mirjana (36364)
- Gracin, Davor (82826)
Journal: J.Appl.Phys.
ISSN: 0021-8979
Volume: 70
Year: 1991
Pages: from 4637 to 0
Summary: Hydrogenated amorphous silicon films have been deposited by
dcmagnetron puttering on
different substrates with different thicknesses and hydrogenconcentration.
The
microscopic area of amorphous layers was crystallized by thefocused beam of
a cw laser.
The laser threshold power for transition from the amorphous tocrystalline
state is
dependent on the radius of the laser beam, film thickness,material of the
substrate, and
hydrogen concentration. These experimental results show that cwlaser
crystallization of
amorphous silicon is a thermally induced process.
Type of paper: Paper in journal
Title:
- Authors:
- Ivanda, M
- Gamulin, O
- Furić, K
- Gracin, Davor (82826)
Journal: J.Mol.Struct.
ISSN: 0022-2860
Volume: 267
Year: 1992
Pages: from 275 to 0
Summary: Amorphous hydrogenated silicon films prepared by a DC
magnetronsputtering method was
soaked by light of an argon ion laser and studied "in situ" byRaman
spectroscopy in order
to resolve the apparent inconsistency in the assignments of thesilicon-bond
stretching
vibrations. The bond-stretching frequency region between 1850 and2250 cm-1
was decomposed
in two Gaussian-shaped bands. The laser-induced changes at thepower density
from 20 to
500 W/cm2 show: a) the continuous increase of the integratedintensity of
the band at
about 2100 cm-1 compared to the band at about 2000 cm-1; thefrequency shift
of both bands
to the lower values; c) the linewidth decrease of the band atabout 2000
cm-1 and d)
linewidth increase of the band at about 2100 cm-1. Contrary tothe previous
proposals that
in the stretching region of the Raman spectra only two bandsexist, our data
show the
existence of four vibrational bands.
Type of paper: Paper in journal
Title:
- Authors:
- Lugomer, S
- Ivanda, M
- Gracin, Davor (82826)
- Furić, K
- Maksimović, A
Journal: J.Mol.Struct.
ISSN: 0022-2860
Volume: 267
Year: 1992
Pages: from 347 to 0
Summary: Amorphous hydrogenated a-Si1-xCx:H thin films have been
obtainedby means of DC magnetron
sputtering in the benzene vapor. Comparative IR and Ramanspectroscopy study
of carbon
incorporation in the silicon matrix have been performed. It wasfound that
carbon
incorporates in the form of the CH3-groups, individual C-atomsand the C6H6
molecules.
Type of paper: Paper in journal
Title:
- Authors:
- Chenjia, C
- Borghesi, A
- Sassela, A
- Pivac, Branko (67912)
Journal: Chin. j. Semicond.
Volume: 13
Year: 1992
Pages: from 668 to 674
Language: kineski
Summary: Oxygen precipitation in comercial silicon Czochralski
wafers isinvestigated by using the
high spatial resolution Fourier transform infrared spectroscopy.With this
technique we
are able to detect the 1230 cm-1 absorption band due to thepresence of
aggregation of
single percipitates. It is found that even a temperature of 1100C for 80
min is enough to
form SiO2 precipitates in platelet shape. A complete mapping ofthese wafers
show that
such precipitates are not disturbed homogeneously but mainly upto a
distance of about 100
Šm from the back surface and from the epi-layer interface
Type of paper: Paper in journal
Title:
- Authors:
- Pivac, Branko (67912)
Journal: Priroda
Volume: 1
Year: 1993
Pages: from 34
Language: hrvatski
Type of paper: Paper in journal
Title:
- Authors:
- Gracin, Davor (82826)
- Radić, Nikola (75345)
- Desnica, Uroš (9386)
- Andreić, Željko (96712)
- Balzar, D.
Journal: Fizika A
Volume: 4
Year: 1995
Language: engleski
Summary: Amorphous a-Si0.85C0.15 and a_Si0.6C0.4:H alloys were
deposited onto non-heated substrate using a magnetron source. The samples
were exposed to a sequential iso-chronal thermal annealing up to 1000 C in
a vacuum chamber, and were investigated by the IR spectroscopy and X-ray
diffraction measurements. The influence of thermal treatnemt on structural
ordering was monitored by the evolution of the intensity and shape of the
spectral IR lines corresponding to the Si-H and Si-C bonds. At low
temperatures, the most pronounced features were accompanied with hydrogen
evolution which completes up to 400 C. Up to 800 C the Si-C absorption
lines have gradually changed their shape, peak position and intensity. At
900 C, the abrupt changes occured, denoting final transition to crystalline
state.
Type of paper: Paper in journal
Title:
- Authors:
- Pivac, Branko (67912)
- Rakvin, B
- Borghesi, A
- Sassela, A
Journal: Fizika A
Volume: 4
Year: 1995
Number of references: 18
Language: engleski
Summary: We studied hydrogen-rich oxynitrides deposited from nitrous
oxide and silane gas mixture by a plasma enhanced chemical vapour
deposition apparatuson single crystal silicon substrates. Annealing study
showed that hydrogen outdiffusion depends on the film composition and is
particularly retarded for oxygen content x=1.4. EPR analysis demonstrated
tha this film contains the the highest concentration of D centers.
Therefore, we conclude that D centers act as hydrogen traps and are
responsable for the peculiar hydrogen behavior observed in the studied
films.
Type of paper: Paper in proceedings
Title:
- Authors:
- Stella, A
- Borghesi, A
- Geddo, M
- Pivac, Branko (67912)
- Sassela, A
- Editors
- Feraris,
Proceedings title: Proc.EPE-MADEP'91
Language: engleski
Place: Torino, Italija
Year: 1991
Pages: from 69 to 73
Meeting: EPE-MADEP'91
Held: from 09/02/91 to 09/06/91
Type of paper: Paper in proceedings
Title:
- Authors:
- Benchiguer, T
- Mari, B
- Schwab, C
- Desnica, Uroš (9386)
- Editors
- Miner, Carla
- Ford, B
- Weber, E
Proceedings title: Proc. of 7th Int. Conf. on Semi-Insulating Materials
Language: engleski
Place: Bristol, Velika Britanija
Year: 1992
Pages: from 241 to 246
Meeting: 7th Int. Conf. on Semi-Insulating Materials
Held: from 04/21/92 to 04/24/92
Summary: The time evolution of the paramagnetic signals and
thephoto-current in the
same semi-insulating GaAs during 1.2 eV illumination at lowtemperatures
can be analysed within the same charge trasfer model. The latterinvolves
neutral compensating donor-acceptor pairs becoming metastablethrough
a charge exchange whose reverse process is hindered by carriertrapping.
Since the same set of parameters allows one to describe thetransient
behaviors in both experiments, we question the need of aconfiguration-
related metastability for the common link between the deep donorEL2
and the photoquenchable AsGa observed by EPR.
Type of paper: Paper in proceedings
Title:
- Authors:
- Fornari, R
- Šantić, Branko (32562)
- Desnica, Uroš (9386)
Proceedings title: Proc. 4th Int. Conf. on Indium Phosphide and Related Materials
Language: engleski
Place: Newport, USA
Year: 1992
Pages: from 511 to 514
Meeting: 4th Int. Conf. on Indium Phosphide and Related Materials
Held: from 04/21/92 to 04/24/92
Summary: It has recently been reported that high-resistivity
Fe-doped InPwafers can
present very different compensation conditions. This gives riseto
different
mobility and conductivity characteristics. The high-resistivityInP samples
can
basically be assigned to three categories: (A) samples with highmobilities
and
thermal activation energies around 0.60 eV; (B) samples withintermediate
mobilities and activation energies below 0.60eV; (C) samples withlow
mobilities
and activation energies around 0.40eV. Some reasons at the basisof the
different physical properties exhibited by Fe-doped InP havealready been
discussed. In this work, new characterization techniques wereapplied in
order
to investigate other deep levels beside the main deep level dueto iron.
Type of paper: Paper in proceedings
Title:
- Authors:
- Šantić, Branko (32562)
- Desnica, Uroš (9386)
- Radić, Nikola (75345)
- Desnica, Dunja (9390)
- Pavlović, Mladen
- Editors
- Miner, Carla
- Ford, B
- Weber, E
Proceedings title: Proc. of 7th Int. Conf. on Semi-Insulating Materials
Language: engleski
Place: Bristol, Velika Britanija
Year: 1993
Pages: from 241 to 246
Meeting: 7th Int. Conf. on Semi-Insulating Materials
Held: from 04/21/92 to 04/24/92
Summary: Photoconductivity transients in semi-insulating GaAs
duringillumination with
low intensity light are studied. By an original usage ofthermally
stimulated
current method, the photoconductivity transient is related to theprocess of
filling of deep traps with charge carriers. A simple model isproposed which
explains the observed phenomena. It is also possible to estimatethe capture
cross
section for dominant traps. Contrary to some previousexplanations, the
metastability oe EL2 or other defects is not supposed. It isshown that deep
levels, other than EL2, can play the dominant roles in lowtemperature
transient
phenomena. Both, the methodology and the model can be used instudy of other
SI semiconductors. In appendix, the possibility of largeconcentration of
traps (>NEL2) is discused.
Type of paper: Paper in proceedings
Title:
- Authors:
- Geddo, M
- Pivac, Branko (67912)
- Stella, A
- Editors
- Heise, H
- Korle, E
Proceedings title: Proc. Series SPIE
Language: engleski
Place: Lubeck, Njemačka
Year: 1992
Pages: from 572 to 573
Meeting: 8th Int. Conf. on Fourier Transform Spectroscopy
Held: from 09/01/91 to 09/06/91
Type of paper: Paper in proceedings
Title:
- Authors:
- Desnica, Uroš (9386)
- Desnica, Dunja (9390)
- Šantić, Branko (32562)
- Pavlović, Mladen
- Šmuc, Tomislav
Proceedings title: Proc. Int. Conf. on Defects in Semiconductors; Materil Science Forum,
Language: engleski
Year: 1994
Pages: from 353 to 358
Meeting: 17th Int. Conf.on Defects in Semiconductors
Held: from 07/18/93 to 07/23/93
Type of paper: Paper in proceedings
Title:
- Authors:
- Ivanda, M
- Desnica, Uroš (9386)
- Haynes, T.E.
Proceedings title: Proc. Int. Conf. on Defects in Semiconductors; Materials Science Forum,
Language: engleski
Place: Gmunden, Austrija
Year: 1994
Pages: from 1387 to 1390
Meeting: 17th Int. Conf.on Defects in Semiconductors
Held: from 07/18/93 to 07/23/93
Type of paper: Paper in proceedings
Title:
- Authors:
- Sassela, A
- Borghesi, A
- Pivac, Branko (67912)
- Pavesi, L
Proceedings title: Proc. SPIE
Language: engleski
Year: 1994
Pages: from 2089
Meeting: 9th International Conference on Fourier Transform Spectroscopy
Held: from 07/23/93 to 07/27/93
Type of paper: Summary in proceedings
Title:
- Authors:
- Pivac, Branko (67912)
- Borghesi, A
- Geddo, M
- Sassela, A
- Stella, A
Proceedings title: Book of Abstracts
Language: engleski
Place: Bethlehem, USA
Year: 1991
Pages: from 230 to 0
Meeting: 16th Int. Conf. on Defects in Semiconductors
Held: from 06/22/91 to 06/27/91
Summary: The quality of epitaxial silicon layers grown on
Czchralskisingle crystal substrates
directly influences device parameters and yield. Unintentionaldoping of
these layers from
the substrate has been well studied. However we found no reportson
unintentional oxygen
contamination of epilayers due to its presence in the substrate.The use of
high spatial
resolution Fourier transform infrared spectroscopy in transversalmode is
shown to be a
powerful technique for both oxygen profiling and precipitationstudies. A
significant
difference in oxygen behavior during the epitaxial layer growth,even for
lightly P doped
substrates, is found. Oxygen, that in some cases diffusessignificantly into
the grown
epitaxial layer, tends to form precipitates there. This is animportant
consequence of
outdiffusion, since it directly influences the quality of theepitaxial
layer.
Type of paper: Summary in proceedings
Title:
- Authors:
- Urli, Natko
- Pivac, Branko (67912)
Proceedings title: Book of Abstracts
Language: engleski
Place: Bethlehem, USA
Year: 1991
Pages: from 249 to 0
Meeting: 16th Int. Conf. on Defects in Semiconductors
Held: from 06/22/91 to 06/27/91
Summary: Various EFG polycrystalline silicon ribbons, with
carbonconcentration in excess of 1018
cm-3, and with large carbon to oxygen ratio, were annealedisochronally and
isothermally
in the temperature range from 450 to 1250 C. IR spectroscopy andDLTS
measurements were
used to monitor decays and growths of various carbon, oxygen andSiC
microprecipitates and
agglomerates. A large absorption peak at 800 cm-1, present onlyin the
surface layers, has
been associated with carbon-selfinterstitial-SiOx precipitatesand a broad
band from 810-
960 cm-1 with SiC nanoprecipitates in the bulk. The whole seriesof bands
just below the
Raman frequency was attributed to vibrations of different carbonpairs.
Several energy
levels associated with intragrain defect complexes as well as adistribution
of the grain
boundary states after the thermal treatment have been detected byDLTS
measurements.
Type of paper: Summary in proceedings
Title:
- Authors:
- Desnica, Uroš (9386)
- Desnica, Dunja (9390)
Proceedings title: Book of Abstracts
Language: engleski
Place: Bethlehem, USA
Year: 1991
Pages: from 317 to 0
Meeting: 16th Int. Conf. on Defects in Semiconductors
Held: from 06/22/91 to 06/27/91
Summary: Processes induced by below-the -gap illumination and
relatedto defects having deep
levels in Liquid Encapsulated Czochralski semi-insulating GaAscrystals were
studied. It
has been reported recently(1) that the dynamics of both opticalquenching
and thermal
recovery (above 125 K) of six deep-trap-related ThermallyStimulated Current
signals was
exactly the same as that of the EL2-related photoconductivitysignal.
Analysis of these
results gives evidence that some of observed deep traps in GaAsare complex
defects, which
include, as their constituent, the EL2 defect. It means that EL2can serve
as a gettering
center for other native defects and/or impurities. The proposedmodel is in
accordance
with other recently published results connecting several deeptraps (EL6,
EL3, EL5 and
EL14) with EL2.
Type of paper: Summary in proceedings
Title:
- Authors:
- Haynes, T.E.
- Holland, O.W.
- Desnica, Uroš (9386)
Proceedings title: Book of Abstracts
Language: engleski
Place: Boston, USA
Year: 1991
Pages: from 0 to 0
Meeting: MRS Fall Meeting
Held: from 12/02/91 to 12/06/91
Summary: Damage accumulation in Si-implanted GaAs has been
characterizedby ion channeling
and Raman scattering as a function of implant temperature, doseand dose
rate.
The damage was found to be extrmely sensitive to temperature nearroom
temperature
(RT), such that an implant dose of 6x10Š14Ć Si/cm2 which produceda peak
damage
fraction of 94% at 20C gave only a 15% damage fraction at 30C.Such a sharp
damage transition obviously has important implications ofcontrolling the
activation
of dopants implanted at RT. One consequence is a strongdependence of the
damage on dose rate near RT: the damage increase with dose rateas the dose
rate
is increased over nearly two orders of magnitude. Comparison ofion
channeling
results with Raman scattering measurements indicates that themorfologies of
the dose-rate-dependent and dose-dependent damage components inRT implants
are distinct, i. e., the rate-dependent component primarilyconsists of
crystalline defects, while the dose-dependent damage has a largeamorphous
contribution.
hese experimental observations are discussed in terms of thecompetition
between
different damage nucleation and growth mechanisms as a functionof the
implant
parameters.
Type of paper: Summary in proceedings
Title:
- Authors:
- Sassela, A
- Geddo, M
- Borghesi, A
- Pivac, Branko (67912)
Proceedings title: Con.Ann. GNSM del CNR
Language: talijanski
Place: Rim, Italija
Year: 1991
Pages: from 33 to 0
Meeting: Con.Ann.GNSM
Held: from 05/15/91 to 05/16/91
Type of paper: Summary in proceedings
Title:
- Authors:
- Geddo, M
- Pivac, Branko (67912)
- Stella, A
Proceedings title: Book of Abstracts
Language: engleski
Place: Lubeck, Njemačka
Year: 1991
Pages: from 0 to 0
Meeting: 8th Int. Conf. on Fourier Transform Spectroscopy
Held: from 09/01/91 to 09/06/91
Type of paper: Summary in proceedings
Title:
- Authors:
- Stella, A
- Borghesi, A
- Geddo, M
- Pivac, Branko (67912)
- Sassela, A
Proceedings title: Book of Abstracts
Language: engleski
Place: Firenza, Italija
Year: 1991
Pages: from 0 to 0
Meeting: EPE-MADEP'91
Held: from 09/02/91 to 09/06/91
Type of paper: Summary in proceedings
Title:
- Authors:
- Gracin, Davor (82826)
- Kramarić, Z
- Radić, Nikola (75345)
Proceedings title: Spektroskopija v teoriji i praksi
Place: Bled, Slovenija
Year: 1991
Pages: from 0 to 0
Meeting: 7. Simpozij "Spektroskopija v teoriji in praksi"
Held: from 04/16/91 to 04/19/91
Summary: Metodom rasprašenja formirani su tanki slojevi
amorfnoghidrogeniziranog silicija na
poliranom monokristalu silicija, uz različite uvjete depozicije.Iz mjerenja
apsorpcije
uzoraka u području 400-4000 cm-1 Perkin Elmer 1710 FTIRspektrometrom,
određena je
spektralna raspodjela koeficjenta apsorpcije koristeći standardnemetode.
Dio spektra koji
odgovara vibracijama istezanja Si-H veza je razložen u komponentemetodom
najmanjih
kvadrata uz pretpostavku Gauss-ovske raspodjele intenzitetalinija u okolini
poznatih
položaja maksimuma za SiH1, SiH2 i SiH3 veza. Pokazano je da semaksimumi
apsorpcije
pomiču prema većim valnim brojevima sa porastom ukupnekoncentracije vodika.
Rezultat je
objašnjen promjenom lokalnog polja u okolini Si-H oscilatora dokoje dolazi
zbog povećanja
broja šupljina i promjene njihove popunjenosti vodikom.
Type of paper: Summary in proceedings
Title:
- Authors:
- Ivanda, M
- Furić, K
- Gamulin, O
- Gracin, Davor (82826)
Proceedings title: 14th Int. Conf. on Amorphous Semiconductors-Science and Technology
Language: engleski
Place: Garmish-Partenkirchen, Njemačka
Year: 1991
Pages: from 51 to 51
Meeting: 14th Int.Conf on Amorphous Semiconductors-Science and Technology
Held: from 08/19/91 to 08/23/91
Summary: Amorphous hydrogenated silicon films were prepared by a
dcmagnetron sputtering method.
Broad background signal observed in Raman spectra near theexcitation line
have been
recently attributed to the recombination of nonthermal electronswith
nonthermal holes.
Bay applaying the procedure proposed by Malinovsky and supposingthe fractal
density of
state, the bacground was decoposed from the phonon bands.
TheStokes/anti-Stokes ratio,
depolarization ratio and the shape of the background signal havethe
characteristics
typical for the "boson" peak in glasses. Changes observed in the"boson"
peak depending on
the hydrogen concentration and laser annealing are compared todifferent
models.
Type of paper: Summary in proceedings
Title:
- Authors:
- Pivac, Branko (67912)
- Borghesi, A
- Geddo, M
- Sassela, A
Proceedings title: Journees Surfaces et Interfaces
Place: Sophia Antipolis, Francuska
Year: 1992
Pages: from 60 to 0
Meeting: Journees Surfaces et Interfaces
Held: from 01/30/92 to 01/31/92
Type of paper: Summary in proceedings
Title:
- Authors:
- Desnica, Uroš (9386)
- Ivanda, M
- Haynes, T.E.
- Holland, O.W.
Proceedings title: Sažeci Institut za fiziku Sveučilišta
Language: hrvatski
Place: Zagreb
Year: 1992
Pages: from 17 to 0
Meeting: IV. Konferencija iz atomske i molekularne fizike i fizike čvrstog stanja
Held: from 02/17/92 to 02/19/92
Summary: Monokristalinični uzorci GaAs implantirani su ionima
silicijaenergije 100 odnosno 170
keV, te je istraživano oštećenje kristalne rešetke kaofunkcija ionske
doze, brzine
doze (gustoće struje Si iona) te temperature implantacije.Implantacijom
izazvano
oštećenje rešetke istraživano je komparacijom Ramanskograspršenja, koje
je prvenstveno
osjetljivo na amorfizaciju kristala, i Rutherfordovograspršenja (RBS),
koje je posebno
osjetljivo na točkaste i druge defekte malog volumena ukristaliničnoj
frakciji
implantiranog sloja. Obe metode pokazuju da sa povećanjemionske doze
dolazi do sve
većeg oštećenja bombardirane površine, tako da čitavimplantirani sloj
postaje amorfan
za doze iznad 1x1015/cm2. U analizi efekata brzine doze naizazvano
oštećenje, pokazano
je da s većom brzinom doze dolazi prvenstveno do većeg neredau
kristaliničnoj frakciji
sloja, dok se relativni volumen amorfne frakcije povećava tekneznatno.
Oštećenja
izazvana ionskim bombardiranjem izuzetno su osjetljiva i namale promjene
temperature
implantacije: na pr. ionska doza od 6x1014Si/cm2 izazivagotovo
kompletnu
amorfizaciju sloja (oštećenje od 94% u maksimumu RBS signala)za
temperaturu
implanacije 20oC, dok se to oštećenje smanjuje na samo 15%ukoliko se
temperatura
implantacija povisi za 10oC. Ovako izrazita temperaturnaovisnost očito
ima važne
praktične implikacije na
Type of paper: Summary in proceedings
Title:
- Authors:
- Gracin, Davor (82826)
- Ivanda, M
- Radić, Nikola (75345)
- Desnica, Uroš (9386)
Proceedings title: Sažeci IFS
Language: hrvatski
Place: Zagreb
Year: 1992
Pages: from 13 to 0
Meeting: IV. Konferencija iz atomske i molekularne fizike i fizike čvrstog stanja
Held: from 02/17/92 to 02/19/92
Summary: Tankim filmovima amorfnog hidrogeniziranog silicija
(0.8-1.2 Šm )formiranim magnetronskim
rasprašenjem, mjerena je spektralna distribucija koeficjentaapsorpcije u
području 400-
10000 cm-1. Pokazano je da se maksimumi apsorpcije kojiodgovaraju
vibracijama istezanja
Si-H veza pomiču prema većim valnim brojevima sa porastom
ukupnekoncentracije vodika.
Rezultat je objašnjen promjenom lokalnog polja u okolini Si-Hoscilatora do
kojeg dolazi
zbog povećanja koncentracije i dimenzije šupljina te promjenenjihove
popunjenosti
vodikom.
Type of paper: Summary in proceedings
Title:
- Authors:
- Borghesi, A
- Pivac, Branko (67912)
- Sassela, A
Proceedings title: Book of abstracts
Language: engleski
Place: Smolence, Čehoslovačka
Year: 1992
Pages: from 7 to 0
Meeting: International Workshop "Characterization of semiconductor substrates and structures
Held: from 04/01/92 to 04/04/92
Type of paper: Summary in proceedings
Title:
- Authors:
- Borghesi, A
- Giuzzetti, G
- Piaggi, A
- Sassela, A
- Stella, A
- Pivac, Branko (67912)
Proceedings title: Book of Abstracts
Language: engleski
Place: Prag, Čehoslovačka
Year: 1992
Pages: from 281 to 0
Meeting: 12th General Conference on Condensed Matter Division of EPS
Held: from 04/06/92 to 04/09/92
Type of paper: Summary in proceedings
Title:
- Authors:
- Fornari, R
- Šantić, Branko (32562)
- Desnica, Uroš (9386)
Proceedings title: Book of abstracts
Language: engleski
Place: Bristol, Velika Britanija
Year: 1992
Pages: from 0 to 0
Meeting: 4th Int. Conf. on Indium Phosphide and Related Materials
Held: from 04/18/92 to 04/24/92
Summary: It has recently been reported that high-resistivity
Fe-doped InPwafers can
present very different compensation conditions. This gives riseto
different
mobility and conductivity characteristics. The high-resistivityInP samples
can
basically be assigned to three categories: (A) samples with highmobilities
and
thermal activation energies around 0.60 eV; (B) samples withintermediate
mobilities and activation energies below 0.60eV; (C) samples withlow
mobilities
and activation energies around 0.40eV. Some reasons at the basisof the
different physical properties exhibited by Fe-doped InP havealready been
discussed. In this work, new characterization techniques wereapplied in
order
to investigate other deep levels beside the main deep level dueto iron.
Type of paper: Summary in proceedings
Title:
- Authors:
- Benchiguer, T
- Mari, B
- Schwab, C
- Desnica, Uroš (9386)
Proceedings title: Book of Abstracts
Language: engleski
Place: Ixtapa, Mexico
Year: 1992
Pages: from 0 to 0
Meeting: 7th Int. Conf. on Semi-Insulating Materials
Held: from 04/21/92 to 04/24/92
Summary: The time evolution of the paramagnetic signals and
thephoto-current in the
same semi-insulating GaAs during 1.2 eV illumination at lowtemperatures
can be analysed within the same charge trasfer model. The latterinvolves
neutral compensating donor-acceptor pairs becoming metastablethrough
a charge exchange whose reverse process is hindered by carriertrapping.
Since the same set of parameters allows one to describe thetransient
behaviors in both experiments, we question the need of aconfiguration-
related metastability for the common link between the deep donorEL2
and the photoquenchable AsGa observed by EPR.
Type of paper: Summary in proceedings
Title:
- Authors:
- Šantić, Branko (32562)
- Desnica, Uroš (9386)
- Radić, Nikola (75345)
- Desnica, Dunja (9390)
- Pavlović, Mladen
Proceedings title: Book of Abstracts
Language: engleski
Place: Ixtapa, Mexico
Year: 1992
Pages: from 0 to 0
Meeting: 7th Int. Conf. on Semi-Insulating Materials
Held: from 04/21/92 to 04/24/92
Summary: A model is proposed for the photoconductivity transients
and the photo-sensitivization in semi-insulating GaAs induced by
low intensity light at low temperatures. During photoconductivity
transient, the lifetime of free carriers is shown to be atime-dependent
quantity, determined mainly by the trapping processes,recombination being
negligible. Photo-sensitivization and thermal restoration areexplained by
filling and emptying of deep traps.
Contrary to some other explanations, in this model it is notnecessary
to utilize the metastability of EL2 or other defects.
Model is verified experimentally by an original use of thermallystimulated
current method. It is also possible to determine values ofcapture
cross sections for dominant traps.
Type of paper: Summary in proceedings
Title:
- Authors:
- Borghesi, A
- Geddo, M
- Giuzzetti, G
- Pivac, Branko (67912)
- Sassela, A
- Stella, A
Proceedings title: Abstracts of posters
Language: engleski
Place: Badia di S. Andrea, Italija
Year: 1992
Pages: from 3 to 43
Meeting: 12th General Conference on Condensed Matter Division of EPS
Held: from 06/01/92 to 06/05/92
Type of paper: Summary in proceedings
Title:
- Authors:
- Pivac, Branko (67912)
- Borghesi, A
- Geddo, M
- Sassela, A
- Stella, A
Proceedings title: Book of Abstracts
Language: engleski
Place: Strasbourg, Francuska
Year: 1992
Pages: from 12 to 0
Meeting: E-MRS 1992 Spring Meeting
Held: from 06/02/92 to 06/05/92
Type of paper: Summary in proceedings
Title:
- Authors:
- Borghesi, A
- Geddo, M
- Pivac, Branko (67912)
- Sassela, A
- Stella, A
Proceedings title: Book of abstracts
Language: engleski
Place: Peking, Kina
Year: 1992
Pages: from 6 to 0
Meeting: 21st Int. Conf. on Physics of semiconductors
Held: from 09/10/92 to 09/14/92
Type of paper: Summary in proceedings
Title:
- Authors:
- Gracin, Davor (82826)
- Radić, Nikola (75345)
Proceedings title: Book of Abstracts
Language: engleski
Place: Hague, Nizozemska
Year: 1992
Pages: from 0 to 0
Meeting: 12th INT. VACUUM CONGRESS(VC-12),8th INT.CONF. ON SOLID SURFACES(ICSS-8)
Held: from 10/12/92 to 10/16/92
Type of paper: Summary in proceedings
Title:
- Authors:
- Gracin, Davor (82826)
- Radić, Nikola (75345)
- Desnica, Uroš (9386)
Proceedings title: Sažeci
Language: hrvatski
Place: Zagreb
Year: 1993
Pages: from 2 to 2
Meeting: 1. Susret vakuumista Hrvatske i Slovenije
Held: from 04/21/93 to 04/21/93
Summary: Tanki filmovi amorfnog hidrogeniziranog silicij karbida
(.8-1.2mikrometara), formirani su
DC magnetronskim rasprašenjem. Kao radni plin korištena je smjesaargona,
vodika i
benzenskih para. Uzorcima je mjerena spektralna distribucijakoeficjenta
apsorpcije i
indeksa loma u području 400-10000 cm-1 kao funkcija koncentracijevezanog
vodika (5-20
at%) i ugljika (x=.1-.4) u sloju. Za male koncentracije ugljika,do x=0.2,
ugljik se
ugrađuje pretežno u obliku Si4-C veza. Za veće koncentracijeugljika
pojavljuju se C-C i
C-Hx (x=1,2,3) veze. Na temelju analize vibracija istezanja Si-Hveza
procijenjena je
koncentracija šupljina u slojevima i njihova distribucija.
Type of paper: Summary in proceedings
Title:
- Authors:
- Ivanda, M
- Gracin, Davor (82826)
- Lugomer, S
- Furić, K
- Gamulin, O
Proceedings title: Sažeci
Language: hrvatski
Place: Zagreb
Year: 1993
Pages: from 6 to 6
Meeting: 1. Susret vakuumista Hrvatske i Slovenije
Held: from 04/21/93 to 04/21/93
Summary: Gustoća fononskih stanja u staklastim materijalima je
znatno većaod vrijednosti koja se
očekuje na osnovi Debayevog modela. jedna od manifestacija ovog"viška"
vibracijskih
modova je pojava tzv. "bozonske vrpce" u niskofrekventnom dijeluRamanovih
spektara. Ovdje
ćemo prikazati sistematsku studiju širokog pozadinskog signala uRamanovim
spektrima
hidrogeniziranog amorfnog silicija (a-Si:H). Signal do sada nijeopažen niti
u jednoj
računskoj simulaciji fononske gustoće stanja i Ramanovihspektara, a ima
svojstva
"bozonske vrpce". Dobiveni depolarizacijski spektar i frekventnaovisnost
signala ukazuju
na mogućnost Ramanovog raspršenja na fraktalnoj strukturi, što jeu skladu
sa dosadašnjim
teorijskim razmatranjima koja govore o mogućnosti fraktalnograsta amorfnog
silicija.
Primjenili smo teoriju Ramanovog raspršenja na fraktalnimstrukturama za
objašnjenje
signala. Teorija se pokazala u potpunosti konzistentnom sopaženim
vrijednostima.
Zbunjujuće djeluje mali prostorni doseg fraktala od ÷6 A, što bise moglo
objasniti
fraktalnošću konstanti sila, odnosno fraktalnom strukturomenergetskih
stanja Si atoma u
konfiguracijskom prostoru. Istražujući ovisnost o koncentracijivezanog
ugljika i vodika,
pokazali smo sa intenzitet pozadinskog signala raste znatno bržes
koncentracijom ugljika
nego s koncentracijom vodika, što se u fraktalnoj interpretacijimože
povezati s relativno
većim unutarnjim naprezanjima koje izaziva vezanje ugljika.
Type of paper: Summary in proceedings
Title:
- Authors:
- Pivac, Branko (67912)
- Borghesi, A
- Sassela, A
Proceedings title: Sažeci
Language: hrvatski
Place: Zagreb
Year: 1993
Pages: from 6 to 6
Meeting: 1. Susret vakuumista Hrvatske i Slovenije
Held: from 04/21/93 to 04/21/93
Type of paper: Summary in proceedings
Title:
- Authors:
- Ivanda, M
- Desnica, Uroš (9386)
- Haynes, T.E.
- Holland, O.W.
Proceedings title: Program and Abstracts
Language: engleski
Place: Gmunden, Austrija
Year: 1993
Pages: from 93 to 93
Meeting: 17th Int. Conf.on Defects in Semiconductors
Held: from 07/18/93 to 07/23/93
Type of paper: Summary in proceedings
Title:
- Authors:
- Desnica, Uroš (9386)
- Desnica, Dunja (9390)
- Šantić, Branko (32562)
- Pavlović, Mladen
- Šmuc, Tomislav
Proceedings title: Program and Abstracts
Language: engleski
Place: Gmunden, Austrija
Year: 1993
Pages: from 130 to 130
Meeting: 17th Int. Conf.on Defects in Semiconductors
Held: from 07/18/93 to 07/23/93
Summary: Besides their contribution to the charge balance in
semi-insulating (SI) GaAs, defects
with deep levels in the forbidden energy gap also play an important
role in low-
temperature transient phenomena. Level labeled T3 seems to beespecially
interesting and
important as: a) It has been observed in Thermally StimulatedCurrent
(TSC) measurements
or Photo-Induced Transient Spectroscopy (PITS) in SI materialsof very
different origins
by a number of authors, b) It is most often the deep levelwith the
largest TSC peak,
indicating its relatively large concentration among defectswith deep
levels. It is
probably the same level observed also in a more conductive GaAs (mostly
by Deep Level
Transient Spectroscopy) and labeled EL8 or ET2. However, thesign of T3
trap is still
controversial: in most papers it is declared an electron trap,but some
claim it to be a
hole trap.
In this paper, properties of this important defect wereinvestigated in
detail.
Electronic properties: The electron capture cross section, ĺn,is
relatively low (in the
10-17cm-2 range). It is shown here for the first time that itshole capture
cross section
ĺp is not negligible; in fact it is of the same order ofmagnitude as ĺn.
Therefore, in
experiments where predominantly free electrons are generatedT3 behaves
as an electron
trap, while in excess of holes it behaves as a hole trap. Thisfinding may
nicely explain
apparent discrepancy in previous papers about its trappingproperties, as
T3 shows either
"n" or "p" trapping properties depending on experimentalconditions.
Analogous properties
were observed earlier for some impurities (gold, platinum etc.) in
Silicon. As T3
communicates with both conduction and valence band (albeit viaquite
small both ĺn and
ĺp), its more proper qualification would be a slowrecombination center,
rather than a
deep trap. Comparable values of ĺn and ĺp would suggest theposition of the
trap near the
middle of the band gap. However, the activation energycorresponding to
the T3 peak is
Ec-0.27 + 0.04 eV, being much closer to the conductive band.Similar
comunication with
both band, despites assimetry of the level position, hasbeen observed
in Silicon for
specific impurities, like platinum.
Microscopic properties: We present additional evidences that T3is a
complex defect which
includes EL2 as its main constituent. TSC peak hight depends onEL2
concentration, being
lower in SI GaAs grown in Ga-rich melt. T3 shows metastability, with
properties very
similar to EL2: its TSC peak can be completely quenched at lowtemperature
with photons in
the 1-1.3 eV photon energy range. After IR quenching, bothoptical and
thermal recovery is
possible by heating sample to cca 140K. Furthermore, spectral
dependance of low-
temperature optical cross sections are similar to these of EL2,giving
further evidence of
the connection between defect responsible to T3 peak and EL2defect.
Type of paper: Summary in proceedings
Title:
- Authors:
- Sassela, A
- Borghesi, A
- Pivac, Branko (67912)
- Pavesi, L
Proceedings title: Book of abstracts Proc. SPIE,2089, 266 (1994)
Language: engleski
Place: Washington, USA
Year: 1994
Pages: from 266 to 267
Meeting: 9th International Conference on Fourier Transform Spectroscopy
Held: from 07/23/93 to 07/27/93
Summary: Infrared absorption of luminescent porous silicon has been
measured with high spatial resolution to study the local chemical
composition. A few typical spectra, which evidence the presence of
impurities such as H, O, and C in different bonding configurations, have
been selected as the most significant and anlysed.
Type of paper: Ph.D.
Title: Short and medium range ordering of amorphous silicon
alloys
Faculty: Prirodoslovno-matematiČki Zagreb
Author: GRACIN DAVOR
Date of defense: 11/24/93
Language: hrvatski
Number of pages: 120
Type of paper: Ph.D.
Title: Some Structural, Optical and Photoelectical Properties of
š1(GaxIn1-x)2Se3
Faculty: Prirodoslovno-matematiČki Zagreb
Author: KRANJČEC MLADEN
Date of defense: 09/17/93
Language: hrvatski
Number of pages: 253
Type of paper: M.A.
Title:
Faculty: Prirodoslovno-matematiČki Zagreb
Author: PAVLOVIĆ MLADEN
Date of defense: 06/17/94
Language: hrvatski
Number of pages: 98
Type of paper: Mentorship
Title:
Faculty: Prirodoslovno-matematiČki Zagreb
Mentor: DESNICA UROŠ
Date of defense: 11/24/93
Number of pages: 120
Author: Gracin Davor
Degree level: Ph.D.
Type of paper: Mentorship
Title:
Faculty: Prirodoslovno-matematiČki Zagreb
Mentor: ČELUSTKA BRANKO
Date of defense: 07/29/93
Number of pages: 253
Author: Kranjčec Mladen
Degree level: Ph.D.
Type of paper: Mentorship
Title:
Faculty: Prirodoslovno-matematiČki Zagreb
Mentor: DESNICA UROŠ
Date of defense: 06/17/94
Number of pages: 98
Author: Pavlović Mladen
Degree level: M.A.
Type of paper: Invited lecture
Title:
Institution: 11th General Conference of the Condensed Matter Division, Exeter, U. K. 8-11. 04. 1991.
Year: 1991
Type of paper: Invited lecture
Title:
Institution: E-MRS Spring Meeting 1995, Strasbourg, Francuska, 22.-26. 05. 1995.
Year: 1995
Type of paper: Invited lecture
Title:
Institution: 11th General Conference of the Condensed Matter Division, Exeter, U. K. 8-11. 04. 1991.
Type of paper: Invited lecture
Title: