Naslov: Hydrogen Passivation of Damage Centers in Semiconductors
Naslov: Damage Accumulation in Gallium Arsenide During Silicon
Implantation near Room Temperature
Naslov: Oxygen Behavior During Silicon Epitaxial Growth: Recent
Advances
Naslov: Interaction and Dynamic of High-temperature Defects in
Carbon-rich Silicon
Naslov: Oxygen Impurities in Epitaxial Silicon Grown on CZ
Supstrates:Recent Advances by Micro-FTIR Spectroscopy
Naslov: Infrared Study of Oxygen Precipitates in Silicon with
Polarized Light
Naslov: Superconducting Mixed-Metal Oxide Compounds of the Type
Sr2Ln1.5Ce0.5MCu2O10-d Ln=Sm, M=Nb,Ta
Naslov: PAC-Untersuchung zur Selbstkompensation von
Dotierungsatomen in II-VI-Halbleitern: 111In in CdS
Naslov: Ambient Gas Induced SiC-like Structures in EFG Poly-Si
Samples
Naslov: On Quantitative Mapping of EL2 Concentration in
Semi-Insulating GaAs
Naslov: Carbon Concentration Variation in Poly Si Wafers
Naslov: The Optical Absorption Edge and Urbach Rule in Mixed
Crystals of (GaxIn1-x)2Se3 in Indium Rich Region
Naslov: Time-evolution of Low-temperature Photoconductivity and
Hall-Mobility in Semi-Insulating GaAs
Naslov: Calculation of the Glow-Curve Shape- Application to the
Thermally Stimulated Currents
Naslov: The Analysis of Low-temperature Photoconductivity
Evolution in Semi-Insulating GaAs
Naslov: Defects in CdS: In Detected by Perturbed Angular
Correlation Spectroscopy (PAC)
Naslov: IR Study of Oxygen Precipitates in Cz Grown Si
Naslov: EL2-related Deep Traps in Semi-Insulating GaAs
Naslov: Interaction of Ambient Gas and Meniscus Surface During
Growth of Edge-defined Filmed Growth of Polycrystalline Silicon samples
Naslov: "Boson" Peak in Raman Spectra of Hydrogenated Amorphous
Silicon
Naslov: Interstitial Oxygene Determination Near Interface Between
Epitaxial and CZ Si Substrate
Naslov: Quantitative Determination of High Temperature Oxygen
Microprecipitates in CZ Si Obtained by Micro-FTIR Spectroscopy
Naslov: Impurities in Silicon Crystals and Silicon Epitaxial
Films: Recent Advances
Naslov: Direct Evidence of Oxygen Precipitates in Epi-Si Obtained
by Micro-FTIR Spectroscopy
Naslov: Characterization of Deep Traps in Semi-Insulating Gallium
Arsenide
Naslov: Raman and Ion Channeling Analysis of Damage in
Ion-implanted GaAs: Dependence on Ion Dose and Dose Rate
Naslov: Donor-Acceptor Pair as Opposed to Anion Antisite
Metastability in Bulk Semi-Insulating GaAs: Electron Paramagnetic Resonance
and Photoconductivity Data Analysis
Naslov: Microstructural Properties of DC Magnetron Sputtered
a-Si:H by IR Spectroscopy
Naslov: Electrical Properties of CuGaxIn1-xTe2 Semiconductors
Naslov: Effect of Annealing on Carbon Concentration in
Edge-defined Film-fed Growth Polycrystalline Silicon
Naslov: Infrared Investigations of Phonon Modes in (GaxIn1-x)2Se3
Solid Solution in the 0.1 Naslov: Polarization Effect on Infrared Absorption of Oxygen
Precipitates in Silicon Naslov: Boron Accumulation at Epi-substrate Silicon Interface
During Epitaxial Growth Naslov: Infrared Determination of Interstitial Oxygen Behavior
During Epitaxial Silicon Grown on CZ Substrates Naslov: Infrared Study of Oxygen Precipitate Composition in
Silicon Naslov: Oxygen Precipitates in Short-time Annealed Czochralski
Silicon Naslov: Stoichiometry of Oxygen Precipitates in Silicon Naslov: In situ Cr Gettering in Polycrystalline Silicon Sheets
Obtained by Edge-Defined Film-Fed Growth Naslov: Homogeneity of Carbon Microdistribution in Edge-defined
Film-fed Grown Polycrystalline Silicon Naslov: IR Study of Structural Changes in Silicon Oxinitride
Films Naslov: Characterization of Porous Silicon Inhomogenieties by
High Spatial Resolution Infrared Spectroscopy Naslov: Trapping and Recombination Processes via Deep Level T3 in
Semi-Insulating Gallium Arsenide Naslov: Photoconductivity Transients and Photo-sensitization
Phenomena in Semi-Insulating GaAs Naslov: Microstructural Properties of DC Magnetron Sputtered
a-Si:H and a-Si1-xCx:H Naslov: Determination of the Refractive Index of a-Si1-xCx:H Thin
Films from Infrared Absorption Spectra Naslov: The Effects of Pressure on the Optical Absorption Edge in
(Ga0.3In0.7)2Se3 Naslov: CW laser crystallization of amorphous silicon: Thermal or
athermal process Naslov: Raman study of light-induced changes in silicon-hydrogen
bond stretching vibration in a-Si:H Naslov: IR and Raman Study of Si1-xCx:H amorphous thin films
ISSN: 0038-1098
Volumen: 81
Godina: 1992
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ISSN: 0003-6951
Volumen: 60
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Volumen: 139
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