SVIBOR - Project code: 1-03-180

MINISTRY OF SCIENCE AND TECHNOLOGY

Strossmayerov trg 4, HR - 10000 ZAGREB
tel.: +385 1 459 44 44, fax: +385 1 459 44 69
E-mail: ured@znanost.hr

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Project code: 1-03-180


NEW SEMICONDUCTING COMPOUNDS AND THIN FILMS


Main researcher: ETLINGER, BOŽIDAR (11390)



Assistants
Type of research: basic
Duration from: 01/01/91. to 12/31/93.

Papers on project (total): 93
Papers on project quoted in Current Contents: 37
Institution name: Institut "Ruđer Bošković", Zagreb (98)
Department/Institute: Materials Research and Electronics
Address: Bijenička cesta 54
City: 10000 - Zagreb, Croatia
Communication
Phone: 385 (0)1 456-11-37,
Fax: 385 (0)1 425-497
Phone: 385 (0)1 424-785
E-mail: etlinger@olimp.irb.hr

Summary: The investigation of: structural, electrical and optical properties of: ternary semiconductor compounds of the Ga-In-Se system, polycrystalline and amorphous silicon, thin films of metal alloys of transient metals and intercalary thin films, especielly TiO2. The application of home-invented methods for the samples growth and their obtaining, as well as the examination of varius influences of the composition, packing, annealing changes on the growth of some particular thin films. The project research programme covers the application of very many experimental techniques: x-ray diffraction, Raman and IR spectroscopy, DLTS, TSC, XPS, AES, and corresponding numerical modelling,complementary to the obtained experimental results.

Keywords: semiconductors, thin film, amorphous film, silicon, optoelectronic properties, metal alloys

Research goals: The aims of this project are as follows: -Study of electrical, optical, structural and some other physical properties of ternary semiconductors, especialy the compounds of the Ga-In-Se systems, and determination of the optical modes frequencies dependence upon the compounds compositions. -Research on the formation and degradation of some high-temperature defects in varius types of polycristalline silicon. -Investigation of electrical vacuum arc, magnetron discharge characteristics and formation of metal plasma via high power laser. -Based on the knowledge of vacuum technologies and discharges in vacuum, our aim is to build up a magnetron unit, which would provide an opportunity of getting amorphous silicon, as well as amorphous films of alloy metals between transient netals with low and high melting point. Special attention is going to be paid to the structural properties, hydrogen doping and recrystallization of amorphous silicon, as well as to the structural, mehanical and electrical properties of transient metal alloys with tungsten. -Investigation of physical properties of intercalary thin films and determination of their possible use in terms of electrodes for some types of galvanic cells.

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Last update: 10/10/95
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