Published papers on project 2-07-266

• Book 4
  
• Paper in journal 7
  
• Paper in proceedings 84
  
• Prototype 2
  
• Ph.D. 3
  
• M.A. 1
  
• Mentorship 4
  
• Computer program 1
  
• Survey/Study 1
  
• Other 5
  

1. Type of paper: Book
   

   Title: Electronics Dictionary
   

   Authors:

   Štambuk, Anka (106340)

   Pervan, Maja (36443)

   Pilković, Mara (14005)

   Roje, Vesna (41402)

   Editors

   Požar, Petar

   Publisher: LOGOS
   ISBN: 86-359-0060-X
   Year: 1991
   Number of pages: 777
   Language: hrvatski
   Summary: Each dictionary part includes 15,000 entries. An entry ofEnglish-Croatian Dictionary consists of a headword with itssynonymous term(s), phonetic transcription of its pronunciationand the Croatian equivalent(s). Pronunciation, spelling andvocabulary differences between British and American English aregiven. Dictionary is completely computer-based, and the softwareis made by member of dictionary team.
   Keywords: Electronics Dictionary, English-Croatian, Croatian-English, Pronunciation, British and American English
   

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2. Type of paper: Book
   

   Title: Electronic Circuits
   

   Authors:

   Biljanović, Petar (3694)

   Publisher: Školska knjiga
   ISBN: 86-03-99230-4
   Year: 1993
   Number of pages: 307
   Number of references: 32
   Language: hrvatski
   Summary: Basic concept of amplifiers. Influence of nonlinearcharacteristic of components on electronic circuits. Basicamplifiers with bipolar transistors. Basic amplifiers withunipolar transistors. Multiple-transistor circuits. Frequencyresponse of transistor amplifiers. Noise. Feedback amplifiers.Frequency response and stability of feedback amplifiers.Differential amplifiers. Power amplifiers. Operationalamplifiers. Sinusoidal oscillators.
   Keywords: Amplifiers, signal, common emitter, common base, common collector, common source, common drain, cascading, frequency response, reference amplification, cuttof frequencies, differential amplifier, operational amplifier, power amplifier, feedback, stability, root-locus, Nyquist, Bode, oscillators, noise
   

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3. Type of paper: Book
   

   Title: Semiconductor Electronic Devices
   

   Authors:

   Biljanović, Petar (3694)

   Editors

   Matutinović, Želimir

   Publisher: Školska knjiga
   Number of pages: 500
   Number of references: 319
   Language: hrvatski
   Summary: Introduction. Semiconductors and their properties. Fermi-Dirac and Maxwell-Boltzmann statistics. Fermi level. Mobility, diffusion constant and lifetime. Transport phenomena in semiconductor. Silicon planar technology. The pn junction theory. The abrupt and linearly graded pn junction. The pn junction under forward and reverse bias. The pn junction diodes. Schockley equation. Breakdown properties. Tunnel diode. Zener diode. Metal-semiconductor junction. The heterojunction. The Schottky-barrier diode. Diode switching. Bipolar transistor. The principles of transistor operation. The Ebers-Moll equations. Transistor input and output characteristics. Bipolar transistors in integrated circuits. Heterojunction bipolar transistors. JFET and MOSFET. Threshold voltage determination. Output and transfer characteristics. Long-channel and short-channel effects. Dynamic and switching properties. Scaling rules.
   Keywords: Semiconductor, planar technology, silicon pn junction, heterojunction, diode, bipolar transistor, Junction FET, MOSFET
   Other: Knjiga je u postupku tiskanja i trebala bi izaći do kraja 1995.
   

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4. Type of paper: Book
   

   Title: Electronic circuits - problems and solutions
   

   Authors:

   Zulim, Ivan

   Biljanović, Petar (3694)

   Editors

   Matutinović, Želimir

   Publisher: Školska knjiga
   ISBN: 953-0-30638-5
   Year: 1994
   Number of pages: 289
   Number of references: 8
   Language: hrvatski
   Summary: Semiconductor diode. Static analysis of transistors. Dynamic analysis of transistors. Static analysis of FETs. Dynamic analysis of FETs. Multistage amplifiers. Bode frequency characteristics. Feedback circuits. Stability of negative feedback circuits. Power amplifiers.
   Keywords: semiconductor diode, bipolar transistor, FET, amplifier
   

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5. Type of paper: Paper in journal
   

   Title: Effect of Bandgap Narrowing in Heavily Doped Compensated Emitter on Bipolar Transistor Current Gain
   

   Authors:

   Butković, Željko (76006)

   Journal: Elektrotehnika
   Number: 5-6
   ISSN: 0013-5844
   Volume: 35
   Year: 1992
   Pages: from 253 to 259
   Number of references: 9
   Language: hrvatski
   Summary: Theoretical calculation of carrier concentration in heavily dopedcompensated silicon is carried out. Using attained results thenew analytical bandgap narrowing model of heavily dopedcompensated silicon is defined. The new model is introduced inthe own program for numerical analysis of bipolar transistors.Analysing the typical example the compensation effect of heavilydoped emitter on current gain á is determined.
   Keywords: Analytical model, Bipolar transistor, Numerical analysis, Program, Current gain, Bandgap narrowing, Heavily doped compensated emitter, Heavily doped silicon
   

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6. Type of paper: Paper in journal
   

   Title: Metastability in Logic Circuits
   

   Authors:

   Sekso, Ivan (64830)

   Journal: Elektrotehnika
   Number: 1
   ISSN: 0013-5844
   Volume: 36
   Year: 1993
   Pages: from 1 to 5
   Number of references: 11
   Language: hrvatski
   Summary: A problem of metastability which is typically present insynchronizing logic circuits is significantly reduced with usageof advanced CMOS and advanced bipolar logic families. However,due to higher clock frequencies a likelihood of metastability canbe intolerable high. In an example of the flip-flop taken fromadvanced Schottky family it is shown how to estimate the durationof metastability and how to realize maximum clock frequency ofthe circuit for a given MTBF of the metastability.
   Keywords: Logic circuits, Maximum clock frequency, Metastability, Synchronizing logic circuits
   

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7. Type of paper: Paper in journal
   

   Title: How to do performance modeling of VMEbus arbitration
   

   Authors:

   Sekso, Ivan (64830)

   Journal: VMEbus Systems
   Number: 0001
   ISSN: 0884-1357
   Volume: 0007
   Year: 1991
   Pages: from 7 to 21
   Number of references: 4
   Language: engleski
   Summary: Described is one possible approach in performance modeling ofVMEbus single-level arbitration. A simulation program is writtenin C language. Simulation results show typical VMEbus effectssuch as bus saturation and bus hogging.
   Keywords: simulation, arbitration
   

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8. Type of paper: Paper in journal
   

   Title: Circuit passes only high-speed data
   

   Authors:

   Sekso, Ivan (64830)

   Journal: Electronic Design
   Number: 21
   ISSN: 0013-4872
   Volume: 39
   Year: 1991
   Pages: from 105 to 105
   Language: engleski
   Summary: The circuit which can serve in digital serial communications forfiltering out the low frequency signals is described in detail.
   Keywords: serial communication, one-shot
   

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9. Type of paper: Paper in journal
   

   Title: Influence of Linear Dipole Dimensions of an Arbitrary Antenna Array on Mutual Impedance
   

   Authors:

   Roje, Vesna (41402)

   Zanchi, Igor (54465)

   Journal: Elektrotehnika
   Number: 3
   ISSN: 0013-5844
   Volume: 34
   Year: 1991
   Pages: from 145 to 152
   Number of references: 6
   Language: hrvatski
   Summary: This paper analyzes the interaction of linear dipoles arbitrarilypositioned in space. The interaction depends on the cross-sectiondiameter a and the length L of the cylindrical dipoles. Sincecalculation for mutual impedance is also extended to dipoleswhich do not comply with the usual dimension approximations, the actual current distribution must be taken into account.Therefore, the paper deals first with the solution of Hallen'sintegral equation for actual current distribution overcylindrical dipole area. The results obtained are the used forcalculating the field and the mutual impedance of antenna arrayof dipoles arbitrarily distributed in space.
   Keywords: Antenna array, linear dipole, mutual impedance
   

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10. Type of paper: Paper in journal
    

    Title: Causal Model in Second Generation Expert Systems - Examination, Optimizing and Learning
    

    Authors:

    Jadrić, Ana (17580)

    Slapničar, Petar

    Bilić, H

    Boljat, I

    Grbac, Z

    Marković, D

    Journal: Elektrotehnika
    Number: 3
    ISSN: 0013-5844
    Volume: 34
    Year: 1991
    Pages: from 163 to 168
    Number of references: 6
    Language: hrvatski
    Summary: In addition to reasoning based on heuristic rules, secondgeneration expert systems have also the ability of reasoningbased on the system model. The paper describes a causual model ofan engineering system given in the graph form. BOTTOM_UP andTOP_DOWN algorithm for model based problem solution and deepreasoning is given. Next, a procedure of optimal examination isdescribed. At the end, the learning component, i.e. thegeneration of new production rules, created as a result ofcausual model examination is dealt with.
    Keywords: Expert systems, optimizing, examination, learning, second generation systems, causual model
    

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11. Type of paper: Paper in journal
    

    Title: Numerical Modelling of Si-PN-photodiode Impuls Response
    

    Authors:

    Gradišnik, Vera (176336)

    Journal: Strojarstvo
    Number: 3
    ISSN: 0562-1887
    Volume: 34
    Year: 1992
    Pages: from 137 to 139
    Number of references: 8
    Language: hrvatski
    Summary: A numerical modelling of PN-photodiode response on Dirach's lightimpulse at low reverse bias based on the one-dimensional model ispresented. The results are compared with experimental ones of theother authors.
    Keywords: PN-photodiode, Impulse response, Numerical modelling
    

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12. Type of paper: Paper in journal
    

    Title: Reduction of p+-n+ Junction Tunneling Current for Base Current Improvement in Si/SiGe/Si Heterojunction Bipolar Transistors
    

    Authors:

    Matutinović-Krstelj, Željka (153702)

    Prinz, E.J.

    Schwartz, P.V.

    Sturm, J.C.

    Journal: IEEE - Electron Device Letters
    Number: 4
    ISSN: 0741-3106
    Volume: 12
    Year: 1991
    Pages: from 163 to 165
    Number of references: 6
    Language: engleski
    Summary: We report a three order of magnitude reduction in parasitictunneling current at heavily doped p+-n+ Si/Si and SiGe/Sijunctions grown by rapid thermal epitaxial chemical vapordeposition compared to previously reported results in Sijunctions fabricated by ion implantation. The results are veryimportant for the reduction of base current in scaled bipolartransistors, especially for SiGe heterojunction bipolartransistors (HBT's), and also show the high quality of theepitaxial interface.
    Keywords: Tunneling current, Heavily doped junction, Epitaxial chemical vapor deposition, Heterojunction bipolar transitor (HBT)
    

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13. Type of paper: Paper in journal
    

    Title: Symmetric Si/Si1-xGex electron resonant tunneling diodes with an anomalous behavior
    

    Authors:

    Matutinović-Krstelj, Željka (153702)

    Liu, C.W.

    Xiao, X.

    Sturm, J.C.

    Journal: Applied Physics Letters
    Number: 6
    ISSN: 0003-6951
    Volume: 62
    Year: 1993
    Pages: from 603 to 605
    Number of references: 10
    Language: engleski
    Summary: We report the fabrication of symmetric n-type resonant tunnelingdiodes grown by rapid thermal chemical vapor deposition in theSi/Si1-xGex material system. Up to four resonant features wereobserved for both positive and negative bias. This is the firsttime that such highly symmetric features are reported forelectron resonant tunneling in the Si/SiGe material system. Apeak-to-valley ratio of 2 was achieved at a temperature of 4 Kand resonances were observed up to 240 K. An additional peak isobserved at low voltages exhibiting an anomalous temperaturebehavior, disappearing at temperatures below 50 K. Modelsinvolving phonon absorption or emitter quantization are proposedto explain this behavior.
    Keywords: Resonant tunneling, Heterostructure, Rapid thermal chemical vapor deposition (RTCVD), Resonance strength
    

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14. Type of paper: Paper in journal
    

    Title: Evidence of Phonon-Absorption-Assisted Electron Resonant Tunneling in Si/Si1-xGex Diodes
    

    Authors:

    Matutinović-Krstelj, Željka (153702)

    Liu, C.W.

    Xiao, X.

    Sturm, J.C.

    Journal: J. Vac. Sci. Technol. - B
    Number: 3
    ISSN: 0734-211
    Volume: 11
    Year: 1993
    Pages: from 1145 to 1148
    Number of references: 9
    Language: engleski
    Summary: We report a study of temperature dependence of electron resonanttunneling diodes in Si/Si1-xGex material system grown by rapidthermal chemical vapor deposition (RTCVD). Up to four highlysymmetric resonances were observed, but the lowest energyresonance has an anomalous temperature behaviour, decreasing instrength with decreasing temperature below 140K and entirelydissapearing below 50K. The temperature behaviour and the biasposition of the resonance are consistent with a model ofphonon-absorption-assisted tunneling with a phonon energy of14+-2meV. The phonon is thought to be an acoustic phonon whichpromotes Umklapp scattering between the conduction band minima inthe emitter and quantum well states.
    Keywords: Electron resonant tunneling, Heterostructure, Symetric resonances, Phonon-apsorption-assisted tunneling
    

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15. Type of paper: Paper in journal
    

    Title: Current Distribution on an Arbitrarily Dimensioned Cylindrical Dipole
    

    Authors:

    Roje, Vesna (41402)

    Poljak, Dragan

    Zanchi, Igor (54465)

    Journal: Elektrotehnika
    Number: 1
    ISSN: 0013-5844
    Volume: 36
    Year: 1993
    Pages: from 37 to 42
    Number of references: 12
    Language: hrvatski
    Summary: Current distribution of an isolated cylindrical dipole ofarbitrary dimensions is analysed. A new coupled integralequations for current distribution are formulated, and a newmethod for numerically solving this problem is developed. Theresults are illustrated by an example of electrically thicktubular antenna.
    Keywords: Cylindrical dipole, new method, numerical solving, calculation example, arbitrary dimensions, current distribution
    

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16. Type of paper: Paper in journal
    

    Title: On Dictionary of Electronics
    

    Authors:

    Štambuk, Anka (106340)

    Journal: Prevoditelj
    Number: 57
    ISSN: 0352-2806
    Volume: 17
    Year: 1992
    Pages: from 7 to 10
    Language: hrvatski
    Summary: At request of the "Prevoditelj" Editoral Board, basicmethodological principles of English-Croatian andCroatian-English Dictionary of Electronics are described andexamples are given.
    Keywords: Chpice of entries, organization of work, organization of entries, database.
    

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17. Type of paper: Paper in journal
    

    Title: Comparison of Different MOSFET Threshold Voltage Definitions
    

    Authors:

    Butković, Željko (76006)

    Journal: Informacije MIDEM
    Number: 1
    ISSN: 0352-9045
    Volume: 24
    Year: 1994
    Pages: from 43 to 46
    Number of references: 4
    Language: engleski
    Summary: Theoretically MOSFET threshold voltage is defined with the surface inversion and can be calculated using the MOS structure technological data. Device current-voltage characteristics are used to define threshold voltage in practice. In this paper both definitions are described and the connection between them has been determined in the example of real MOS structure.
    Keywords: semiconductors, MOS transistor, threshold voltage, theoretical analysis, Poisson's equation, strong inversion, weak inversion, transfer characteristic
    

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18. Type of paper: Paper in journal
    

    Title: Threshold Voltage Adjustment of Depletion n-Channel MOS Transistor
    

    Authors:

    Butković, Željko (76006)

    Journal: Automatika
    Number: 3-4
    ISSN: 0005-1144
    Volume: 35
    Year: 1994
    Pages: from 83 to 88
    Number of references: 5
    Language: engleski
    Summary: Depletion nMOS transistor is most often used as a load device in nMOS technology. Electrical characteristics of nMOS digital integrated circuit depend on threshold voltage of depletion nMOS transistor, that is technologically adjusted with the channel ion implantation. To make a connection between technological parameters and circuit characteristics two approaches of threshold voltage calculation are worked out. Technological parameters are included in the threshold voltage UGS0t, determined with theoretical analysis of MOS structure with implanted channel. Circuit properties are the result of the threshold voltage UGS0c, extracted from current-voltage transistor characteristics. For chosen example of depletion nMOS transistor, the voltage UGS0t is calculated numerically, with the simple computer program, and the voltage UGS0c is extracted from the characteristics simulated with MINIMOS. Achieved matching between the voltages UGS0t and UGS0c, with the error less than 0.1 V, shows that the approach based on the theoretical analysis of MOS structure can be correctly applied in threshold voltage adjustment.
    Keywords: channel ion implantation, depletion nMOS transistor, MOS structure, MOS transistor characteristic, nMOS technology, threshold voltage
    

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19. Type of paper: Paper in journal
    

    Title: Parallel Input-Output Interface PUI
    

    Authors:

    Zelić, Goran (127036)

    Martinčić, Krunoslav (163073)

    Skypala, Mladen

    Journal: Informacije MIDEM
    Number: 1
    ISSN: 0352-9045
    Volume: 24
    Year: 1994
    Pages: from 47 to 51
    Number of references: 3
    Language: hrvatski
    Summary: This paper describes an approach to the design of parallel input-output interface (PUI device) compatible to 8 and 16 bit microprocessor buses using modern VLSI design methodology (standard cells and PLA modules). Concept from idea to architecture, that is mask implemented, is described.
    Keywords: semiconductors, VLSI circuits, circuit design, standard cells, PIO parallel input-output interfaces, PLA programmable logic arrays, PLA modules, microprocessor buses, 8 and 16 bit microprocessors
    

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20. Type of paper: Paper in journal
    

    Title: Wire antennas parameters calculation by finite elements method
    

    Authors:

    Poljak, Dragan

    Roje, Vesna (41402)

    Journal: Elektrotehnika
    Number: 1-2
    ISSN: 0013-5844
    Volume: 38
    Year: 1995
    Pages: from 21 to 30
    Number of references: 11
    Language: hrvatski
    Summary: New numerical approach to the calculation of the wire antenna parameters is presented. The electric field integral-differential equation is solved by means of the weak finite element formulation, which provides advantages over the usual methods. Special advantages are obviously present dealing with simple and efficient algorithms in near field and input impedance calculation.
    Keywords: Finite elements method, wire antennas, near field, imput impedance
    

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21. Type of paper: Paper in proceedings
    

    Title: IGEM: An Interactive Layout Editor for Integrated Circuits
    

    Authors:

    Jakšić, Ranko

    Zelić, Goran (127036)

    Proceedings title: Zbornik radova XXXV konferencije ETAN-a
    Language: hrvatski
    Place: Ohrid, BJRM
    Year: 1991
    ISBN/ISSN: 86-80509-03-5
    Pages: from 165 to 172
    Meeting: XXXV jugoslavenska konferencija o elektronici, telekomunikacijama, automatizaciji i nuklearnoj tehnici
    Held: from 06/03/91 to 06/07/91
    Summary: IC masks consist of a cinsiderable number of geometric data,generated by means of interactive graphic editors. In order toprovide fast interactive work, a database is necessarz, whichwill allow for fast retrival and geometric shape handling. Adatabase organization based on the corner stiching method isdescribed in this paper, together with its implementation withinan interactive graphic editor.
    Keywords: IC masks, interactiv graphic editor, database, corner stiching method
    

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22. Type of paper: Paper in proceedings
    

    Title: Influence of deep traps on surface recombination
    

    Authors:

    Divković Pukšec, Julijana (9772)

    Editors

    Biljanović, Petar (3694)

    Proceedings title: Zbornik radova savjetovanja MET
    Language: hrvatski
    Place: Rijeka
    Year: 1992
    ISBN/ISSN: 86-385-0113-7
    Pages: from 20 to 25
    Meeting: Mipro '92 - MET (Mikroelektronika i elektroničke tehnologije)
    Held: from 05/18/92 to 05/21/92
    Summary: Deep traps located at, or very close to, the surface ofsemiconductor can pin the Fermi level, and the drop of quasiFermi levels in the space charge layer is observed. In thisarticle surface recombination velocity is calculating withassumption that quasi Fermi levels are flat, and without suchassumption.
    Keywords: deep trap,recombination,surface recombination velocity
    

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23. Type of paper: Paper in proceedings
    

    Title: Heavily Doped Compensated Silicon Model for Numerical Analysis of Bipolar Transistors
    

    Authors:

    Butković, Željko (76006)

    Proceedings title: Zbornik radova XXXV konferencije ETAN-a - XIII-XIV sv.
    Language: hrvatski
    Place: Ohrid, BJRM
    Year: 1991
    ISBN/ISSN: 86-80509-03-5
    Pages: from 117 to 124
    Meeting: XXXV jugoslavenska konferencija o elektronici, telekomunikacijama, automatizaciji i nuklearnoj tehnici
    Held: from 06/03/91 to 06/07/91
    Summary: The existing program for numerical device analysis is modifiedwith heavily doped compensated silicon model. The model influenceon effective intrinsic concentration and carrier mobilitiesdistributions is presented using the analysis of bipolartransistor.
    Keywords: Numerical analysis, Heavily doped compensated silicon, Intrinsic concentration, Carrier mobility, Bipolar transistor
    

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24. Type of paper: Paper in proceedings
    

    Title: The Properties of Bipolar Transistors with Polysilicon Emitter
    

    Authors:

    Butković, Željko (76006)

    Editors

    Vidmar, Branko

    Proceedings title: ETAN u pomorstvu - Zbornik radova
    Language: hrvatski
    Place: Zadar
    Year: 1991
    ISBN/ISSN: 8680139-01-07
    Pages: from 313 to 316
    Meeting: 33. Simpozij ETAN-a u pomorstvu
    Held: from 06/24/91 to 06/26/91
    Summary: Polysilicon layer as the emitter' part is used in fabrication ofbipolar transistors with submikron dimensions. Transistors withpolysilicon emitters have increased current gains á. Thedifferences in electrical characteristics between transistorswith metal and polysilicon emitter contact are illustrated withparallel numerical analysis of both devices.
    Keywords: Polysilicon emitter, Current gain, Numerical analysis, Bipolar transistor
    

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25. Type of paper: Paper in proceedings
    

    Title: BiCMOS integrated Circuits
    

    Authors:

    Butković, Željko (76006)

    Šribar, Julijan (112805)

    Zelić, Goran (127036)

    Editors

    Srb, Neven

    Proceedings title: Zbornik radova 3. SONT-a - Sv. 1.
    Language: hrvatski
    Place: Opatija
    Year: 1991
    ISBN/ISSN: 86-81997-01-7
    Pages: from 132 to 135
    Meeting: 3. Međunarodni simpozij o novim tehnologijama
    Held: from 10/15/91 to 10/17/91
    Summary: This article describes the basic propreties of combined bipolarand CMOS (BiCMOS) integrated circuits. The process for anoptimized BiCMOS structure is given, Transfer and transientcharacteristics of BiCMOS ICs are analyzed and compared tocharacteristics of CMOS.
    Keywords: MOS transistor, Digital integrated circuit, BiCMOS technology, Invertor cell, SPICE analysis
    

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26. Type of paper: Paper in proceedings
    

    Title: Polysilicon Emitter Influence on Bipolar Transistor Characteristics
    

    Authors:

    Butković, Željko (76006)

    Editors

    Biljanović, Petar (3694)

    Proceedings title: Zbornik radova MET
    Language: hrvatski
    Place: Rijeka
    Year: 1992
    ISBN/ISSN: 86-385-0113-7
    Pages: from 2-8 to 2-13
    Meeting: Mipro '92 - MET (Mikroelektronika i elektroničke tehnologije)
    Held: from 05/18/92 to 05/21/92
    Summary: Shallow emitter of bipolar transistor is reliably processed bydiffusion from highly doped polysilicon layer. Polysiliconemitter, as the integral part of the element, changes theelectrical characteristics of transistor, mainly the current gainá. Influence of the polysilicon layer parameters on the devicecharacteristics is determined by the numerical analysis ofbipolar transistor.
    Keywords: Polysilicon emitter, Current gain, Semiconductor equations, Grain boundary current, Tunneling current
    

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27. Type of paper: Paper in proceedings
    

    Title: Comparison of MOSFET Threshold Voltage Definitions
    

    Authors:

    Butković, Željko (76006)

    Editors

    Biljanović, Petar (3694)

    Proceedings title: Zbornik radova MEET
    Language: hrvatski
    Place: Rijeka
    Year: 1993
    ISBN/ISSN: 953-6042-03-7
    Pages: from 2-25 to 2-30
    Meeting: Mipro '93 - MEET (Mikroelektronika, elektronika i elektroničke tehnologije)
    Held: from 05/24/93 to 05/27/93
    Summary: Theoretically MOSFET threshold voltage is defined with stronginversion condition and can be calculated using the MOS structuretechnological data. Device current-voltage characteristics are used to define threshold voltage in practice. In this paper bothdefinitions are described and are compared in the example of realMOS structure.
    Keywords: Threshold voltage, MOSFET, Theoretical analysis, Strong inversion, Transfer characteristics
    

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28. Type of paper: Paper in proceedings
    

    Title: Heat Effects Modelling in Bipolar Transistors
    

    Authors:

    Butković, Željko (76006)

    Editors

    Benčić, Zvonko

    Proceedings title: Zbornik radova s prvog kolokvija Modeli izmjene topline u električnim uređajima
    Language: hrvatski
    Place: Zagreb
    Year: 1992
    ISBN/ISSN: 92 1222096
    Pages: from 115 to 127
    Meeting: Prvi kolokvij "Modeli izmjene topline u električnim uređajima" sekcije "Modeliranje u znanosti, tehnici i društvu"
    Held: from 10/21/92 to 10/21/92
    Summary: This paper reviews bipolar transistors' models for heat effectsanalysis. The extensions of basic electrical model needed forlattice temperature calculation are included. Hot-carrier modelin transistor operation is described. The results of heatanalysis present the distribution of local power dissipationinside the bipolar transistor structure.
    Keywords: Heat effects, Bipolar transistor, Heat flow equation, Lattice temperature, Hot-carriers, Energy balance equation, Numerical analysis
    

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29. Type of paper: Paper in proceedings
    

    Title: Transient behavior of advanced logic families
    

    Authors:

    Sekso, Ivan (64830)

    Editors

    Srb, Neven

    Proceedings title: Zbornik radova 3. SONT-a - Sv. 1.
    Language: hrvatski
    Place: Zagreb
    Year: 1991
    ISBN/ISSN: 86-81997-01-7
    Pages: from 144 to 150
    Meeting: 3. Međunarodni simpozij o novim tehnologijama
    Held: from 10/15/91 to 10/17/91
    Summary: The subject of this work includes metastability and switchingnoise (ground bounce) in advanced Schottky and advanced CMOSlogic families. The metastability is significantly lower comparedto standard Schottky (e.g.,LS) and CMOS families, but the groundbounce noise is higher. The simultaneous switching noise ismeasured on samples of advanced bipolar and CMOS bustransceivers.
    Keywords: metastabilnost, istitravanje mase, prekapčanje
    

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30. Type of paper: Paper in proceedings
    

    Title: Digital Subsystems and Transmission Line Effects
    

    Authors:

    Sekso, Ivan (64830)

    Editors

    Srb, Neven

    Proceedings title: Zbornik radova 4.SONT-a - I
    Language: hrvatski
    Place: Pula
    Year: 1993
    ISBN/ISSN: 86-81997
    Pages: from 181 to 184
    Meeting: 4. Međunarodni simpozij o novim tehnologijama
    Held: from 10/25/93 to 10/27/93
    Summary: The paper describes transmission line effects in digitalsubsystems based on circuits from advanced logic families.Advanced Schottky and advanced CMOS logic gates behavior isanalysed using Bergeron diagrams.
    Keywords: prijenosna linija, usavršena logika
    Other: d
    

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31. Type of paper: Paper in proceedings
    

    Title: Synchronization of Logic Circuits and Calculation of Metastability
    

    Authors:

    Sekso, Ivan (64830)

    Editors

    Biljanović, Petar (3694)

    Proceedings title: Zbornik radova savjetovanja MET
    Language: hrvatski
    Place: Rijeka
    Year: 1992
    ISBN/ISSN: 86-385-0113-7
    Pages: from 31 to 36
    Meeting: Mipro '92 - MET (Mikroelektronika i elektroničke tehnologije)
    Held: from 05/18/92 to 05/21/92
    Summary: It is well known that during synchronization of asynchronouslogic circuits the metastability, i.e. undefined logic state of asynchronizer (typically D flip-flop) can happen. It effectivelystretches the flip-flop propagation time and puts upper bound onmaximal clock frequency. In an example of flip-flop taken fromadvanced CMOS family it is shown how to estimate the duration ofmetastability and how to realize maximal clock frequency of thecircuit for a given MTBF of the metastability.
    Keywords: clock frequency, setup time, resolve time, wait time, propagation time, metastability, MTBF (mean time between failures)
    Other:
    

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32. Type of paper: Paper in proceedings
    

    Title: Dual-port Memories in Multiprocessing Systems
    

    Authors:

    Sekso, Ivan (64830)

    Editors

    Biljanović, Petar (3694)

    Proceedings title: Zbornik radova savjetovanja MEET
    Language: hrvatski
    Place: Rijeka
    Year: 1993
    ISBN/ISSN: 953-6042-03-7
    Pages: from 54 to 59
    Meeting: Mipro '93 - MEET (Mikroelektronika, elektronika i elektroničke tehnologije)
    Held: from 05/24/93 to 05/27/93
    Summary: This paper describes dual-port static RAM chip and dual-accessdynamic RAM subsystem. Both types of dual-port memories can takerole of common and local memory of two microprocessors and servefor their communication. The advantages and drawbacks of thesetwo types of memories are highlighted.
    Keywords: port, system bus, RAM (random access memory), arbitration logic
    Other: d
    

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33. Type of paper: Paper in proceedings
    

    Title: Channel Routing in Integrated Circuits
    

    Authors:

    Madecki, Miroslav

    Sokolić, Darko

    Editors

    Biljanović, Petar (3694)

    Proceedings title: Zbornik radova savjetovanja MEET
    Language: engleski
    Place: Rijeka
    Year: 1993
    ISBN/ISSN: 953-6042-03-7
    Pages: from 42 to 47
    Meeting: Mipro '93 - MEET (Mikroelektronika, elektronika i elektroničke tehnologije)
    Held: from 05/24/93 to 05/27/93
    Summary: AR is symbolic channel router designed to route nets thatinterconnect cells in integrated circuits. It can route two andthree layer channels with cyclic constraints. Routing isperformed in two steps. In the first step horizontal segments ofnets are assigned to tracks, in such a way that horizontalconstraints are satisfied, while the number of vertical conflictsis minimized. Remaining vertical conflicts are resolved in thesecond step, with maze'router and rip'up and retrz algorithm.Experimental results obtained on several examples demonstrate theperformance of our program.
    Keywords: symbolic channel router, integrated circuits, maze-router, rip-up and retry algorithm
    

    ---

34. Type of paper: Paper in proceedings
    

    Title: Static Series-Voltage Noise Margin for CMOS
    

    Authors:

    Szabo, Aleksandar (45735)

    Editors

    Biljanović, Petar (3694)

    Proceedings title: Zbornik radova savjetovanja MEET
    Language: hrvatski
    Place: Rijeka
    Year: 1993
    ISBN/ISSN: 953-6024-03-7
    Pages: from 7 to 11
    Meeting: Mipro '93 - MEET (Mikroelektronika, elektronika i elektroničke tehnologije)
    Held: from 05/24/93 to 05/27/93
    Summary: Noise margin is the maximum spurious signal that can be acceptedby the device when used in a system, while still operatingcorrectly. There are several methods to determine noise margins.In this work the starting point was maximum square between normaland mirrored voltage transfer characteristics method. Since thetransfer characteristic for the CMOS-invertor can be describedanaliticaly, the CMOS noise margin has been calculated startingfrom the graphic solution presentation.
    Keywords: Noise margin, logic circuits, digital circuits, CMOS
    

    ---

35. Type of paper: Paper in proceedings
    

    Title: Parallel Input - Output Interface - PUI
    

    Authors:

    Zelić, Goran (127036)

    Martinčić, Krunoslav (163073)

    Skypala, Mladen

    Editors

    Biljanović, Petar (3694)

    Proceedings title: Zbornik radova savjetovanja MEET
    Language: hrvatski
    Place: Rijeka
    Year: 1993
    ISBN/ISSN: 953-6042-03-7
    Pages: from 48 to 53
    Meeting: Mipro '93 - MEET (Mikroelektronika, elektronika i elektroničke tehnologije)
    Held: from 05/24/93 to 05/27/93
    Summary: This paper describes an approach to the design of parallelinput-output interface (PUI device) compatible to 8 and 16 bitmicroprocessor buses using a modern VLSI design methodology(standard cells and PLA modules). Concept from idea toarchitecture, that is mask implemented, is described.
    Keywords: VLSI design methodology, standard cells, PLA modules, arhitecture, IC mask
    

    ---

36. Type of paper: Paper in proceedings
    

    Title: Comparison of Difraction Losses using KE and UTD Models
    

    Authors:

    Zanchi, Igor (54465)

    Roje, Vesna (41402)

    Marinović, Ivan

    Editors

    Vidmar, Branko

    Proceedings title: Zbornik radova - ELMAR
    Language: hrvatski
    Place: Zadar
    Year: 1992
    ISBN/ISSN: 8680139-01-07
    Pages: from 162 to 165
    Meeting: 34. Međunarodni simpozij ELMAR-a
    Held: from 09/28/92 to 09/30/92
    Summary: Two methods for the prediction of diffraction losses of radiowawes are presented: Knife edge (KE) and the wedge approximationusing Uiform Geometrical Theory of Diffraction (UTD). Thecomputer program has been written and the resultes for one andtwo obstacles were compared. Comparing the results with themeasured data it was pointed out the advantage of UTD over KE fortho low slope obstacles, specialy in the shadow region.
    Keywords: Knife edge (KE), wedge approximation using Geometrical Theory of Diffraction (UTD)
    

    ---

37. Type of paper: Paper in proceedings
    

    Title: Current Distribution for Cylindrical Dipole and its Influence on Mutual Impedance
    

    Authors:

    Roje, Vesna (41402)

    Poljak, Dragan

    Zanchi, Igor (54465)

    Editors

    Vidmar, Branko

    Proceedings title: Zbornik radova - ELMAR
    Language: hrvatski
    Place: Zadar
    Year: 1992
    ISBN/ISSN: 8680139-01-07
    Pages: from 158 to 161
    Meeting: 34. Međunarodni simpozij ELMAR-a
    Held: from 09/28/92 to 09/30/92
    Summary: Hallen's integral equation for the current distribution on acylindrical dipol is solved by various methods. Valorization ofthese and other known numerical methods are made with respect totheir influence on the calculation of the mutual impedance.
    Keywords: Hallen's integral equation, cylindrical dipol, current distibution, mutual impedance
    

    ---

38. Type of paper: Paper in proceedings
    

    Title: Influence of multiple'level deep states on minority and majority carriers lifetime
    

    Authors:

    Divković Pukšec, Julijana (9772)

    Editors

    Biljanović, Petar (3694)

    Proceedings title: Zbornik radova savjetovanja MEET
    Language: hrvatski
    Place: Rijeka
    Year: 1993
    ISBN/ISSN: 953-6042-03-7
    Pages: from 1 to 6
    Meeting: Mipro '93 - MEET (Mikroelektronika, elektronika i elektroničke tehnologije)
    Held: from 05/24/93 to 05/27/93
    Summary: In semiconductors which posses large, indirect band gap minorityand majority carriers' lifetimes are controlled by added deepstates of both, donor and acceptor type. In this article arepresented results for silicon containing gold, which introducestwo deep levels, one of donor and the other of acceptor type.Lifetimes are calculated for silicon n and p type, with influenceof both gold levels; comparison is made for cases whwn oneof them is neglected. Calculation is provided in dependance ofboth, deep impurities concentrations and injection levels.
    Keywords: multiple-level state, recombination, lifetime
    

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39. Type of paper: Paper in proceedings
    

    Title: PN junction depletion region dependance on deep impurities
    

    Authors:

    Divković Pukšec, Julijana (9772)

    Proceedings title: Zbornik radova XXXV konferencije ETAN-a - XIII-XIV sv.
    Language: hrvatski
    Place: Ohrid, BJRM
    Year: 1991
    ISBN/ISSN: 86-80509-03-5
    Pages: from 141 to 148
    Meeting: XXXV jugoslavenska konferencija o elektronici, telekomunikacijama, automatizaciji i nuklearnoj tehnici
    Held: from 06/03/91 to 06/07/91
    Summary: PN junction depletion with depends on voltage and quantity ofionized impurity atoms in this region. Degree of ionizationdepends on position of Fermi level and energy level of certainimpurity. Difference beetwen this two levels depends on positionin pn depletion region.In ths work depletion region width of p+njunction which contains Au as deep impurities is calculated.
    Keywords: depletion region width, deep impurity,ionization degree
    

    ---

40. Type of paper: Paper in proceedings
    

    Title: Surface mount technology in modern electronic
    

    Authors:

    Krois, Igor (169746)

    Editors

    Srb, Neven

    Proceedings title: Zbornik radova 3. SONT-a - S. 1.
    Language: hrvatski
    Place: Opatija
    Year: 1991
    ISBN/ISSN: 86-81997-01-7
    Pages: from 136 to 139
    Meeting: 3. Međunarodni simpozij o novim tehnologijama
    Held: from 10/15/91 to 10/17/91
    Summary: Electronic componets manufactured in surface mount technology(SMT) are of great importance in electronic industry. In thisarticle the reasions for use of SMT components and directions ofdevelopment in the future will be considered.
    Keywords: Printed board, ringing, ceramic
    

    ---

41. Type of paper: Paper in proceedings
    

    Title: Optimizing of MOSFET transistor drive
    

    Authors:

    Krois, Igor (169746)

    Editors

    Biljanović, Petar (3694)

    Proceedings title: Zbornik radova savjetovanja MET
    Language: hrvatski
    Place: Rijeka
    Year: 1992
    ISBN/ISSN: 86-385-0113-7
    Pages: from 26 to 30
    Meeting: Mipro '92 - MET (Mikroelektronika i elektroničke tehnologije)
    Held: from 05/18/92 to 05/21/92
    Summary: A different way of MOSFET transistor drive synthesis will beconsidered in this article.
    Keywords: Drive, charge, turn-on, turn-off
    

    ---

42. Type of paper: Paper in proceedings
    

    Title: Electronics Technology - State-of-the-Art
    

    Authors:

    Martinčić, Krunoslav (163073)

    Editors

    Srb, Neven

    Proceedings title: Zbornik radova 3. SONT-a - Sv. 1.
    Language: hrvatski
    Place: Opatija
    Year: 1991
    ISBN/ISSN: 86-81997-01-7
    Pages: from 140 to 143
    Meeting: 3. Međunarodni simpozij o novim tehnologijama
    Held: from 10/15/91 to 10/17/91
    Summary: In this paper present status and analysis of electronicstechnology is presented. Relations between electronics technologyand education system are examined, as weel as the impact at humancivilization. The state-of-the-art and electronics technology inCroatia are compared.
    Keywords: Electronics technology, trends, manufacturability, techology-education, technology-state.
    

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43. Type of paper: Paper in proceedings
    

    Title: Mechanisms of Electrical Conduction in Polycrystalline Silicon
    

    Authors:

    Vukic, Mladenko (190613)

    Editors

    Biljanović, Petar (3694)

    Proceedings title: Zbornik radova savjetovanja MET
    Language: hrvatski
    Place: Rijeka
    Year: 1992
    ISBN/ISSN: 86-385-0113-7
    Pages: from 14 to 19
    Meeting: Mipro '92 - MET (Mikroelektronika i elektroničke tehnologije)
    Held: from 05/18/92 to 05/21/92
    Summary: This paper gives a review of mechanisms of the electricalconduction in polycrystalline silicon. The combined mechanisms ofdopand segregation, carrier trapping an carrier reflection atgrain boundaries are proposed to explain the electricalconduction.The grain boundares are assumed to behave as anintrisic wide-band-gap semiconductor. Thermionic emissionthrough the potentials barriers crated within the grains due tothe carrier trapping at the grain boundaries, thermionic emissionover these potential barriers and then tunneling through thepotential barriers of grain boundaries and thermionic emissionover all these bariers are proposed as carrier transportmechanisms.
    Keywords: The electrical conduction, polycrystalline silicon, potential barriers, tunneling, thermionic emission of electrons
    

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44. Type of paper: Paper in proceedings
    

    Title: One-dimensional numerical analysis of HEMT's
    

    Authors:

    Barić, Adrijan (136444)

    Proceedings title: Zbornik radova XXXV konferencije ETAN-a - XIII-XIV sv.
    Language: hrvatski
    Place: Ohrid, BJRM
    Year: 1991
    ISBN/ISSN: 86-80509-03-5
    Pages: from 125 to 132
    Meeting: XXXV jugoslavenska konferencija o elektronici, telekomunikacijama, automatizaciji i nuklearnoj tehnici
    Held: from 06/03/91 to 06/07/91
    Summary: In this paper a one-dimensional model of HEMT's based on thenumerical solution of Poisson's equation in the AlGaAs layer isdeveloped. The problems connected to donor neutralization andfree electron generation in the AlGaAs layer at higher gatevoltages are emphasized, as well as the problems connected to therelation between the electron concentration in the channel ofHEMT's and the position in the Fermi level at heterointerface.The results of the numerical model are compared with the resultsof the iterative model that is obtained from the analyticalsolution of Poisson's equation.
    Keywords: Numerical analysis, HEMT, Poisson's equation, Heterointerface
    

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45. Type of paper: Paper in proceedings
    

    Title: Two-dimensional electron gas of HEMT's
    

    Authors:

    Barić, Adrijan (136444)

    Editors

    Vidmar, Branko

    Proceedings title: ETAN u pomorstvu - Zbornik radova
    Language: hrvatski
    Place: Zadar
    Year: 1991
    ISBN/ISSN: 8680139-01-07
    Pages: from 317 to 320
    Meeting: 33. Simpozij ETAN-a u pomorstvu
    Held: from 06/24/91 to 06/26/91
    Summary: In this paper different procedures for determing the 2-DEG (two-dimensional electron gas) concentration in the channel of HEMT's are presented. The results that follow from the analytical model and the numerical models are explained. The reality of the models is commented on the basis of the capacity of the electrons in the channel of HEMT's.
    Keywords: Electron gas, HEMT, Numerical model, Capacity of electrons
    

    ---

46. Type of paper: Paper in proceedings
    

    Title: On the Two-Dimensional Electron Gas of HEMT's
    

    Authors:

    Barić, Adrijan (136444)

    Editors

    Zajc, Baldomir

    Solina, Franc

    Proceedings title: melecon'91 - Proceedings - Vol. I
    Language: engleski
    Place: Ljubljana, Slovenija
    Year: 1991
    ISBN/ISSN: 0-87942-655-1
    Pages: from 134 to 137
    Meeting: 6th Mediterranean Electrotechnical Conference - melecon'91
    Held: from 05/22/91 to 05/24/91
    Summary: A new analytical model for the two-dimensional electron gas(2-DEG) concentration that implicitly includes the dependence on acceptor concentration in the GaAs layer of HEMT's is developed.The model simplifies the iterative solution of the charge-control model at the gate voltages near the threshold.
    Keywords: Electron gas, HEMT, Analytical model, Charge-control model
    

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47. Type of paper: Paper in proceedings
    

    Title: Semiconductor with Balanced Electron and Hole Conductivity
    

    Authors:

    Biljanović, Petar (3694)

    Editors

    Biljanović, Petar (3694)

    Proceedings title: Zbornik radova savjetovanja MET
    Language: hrvatski
    Place: Rijeka
    Year: 1992
    ISBN/ISSN: 86-385-0113-7
    Pages: from 1 to 7
    Meeting: Mipro '92 - MET (Mikroelektronika i elektroničke tehnologije)
    Held: from 05/18/92 to 05/21/92
    Summary: Electron component of intrinsic semiconductor specificconductivity is larger than the hole component. For this reasonintrinsic semiconductor seems to be of n-type conductivity. Theright amount of acceptor concentration is determined. Specificconductivity of sach balanced "intrinsic" semiconductor issmaller than in intrinsic case.
    Keywords: semiconductor, conductivity, intrinsic, n-type, electron, hole, component
    

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48. Type of paper: Paper in proceedings
    

    Title: The Conductivity Energy Band Structure of Polycrystalline Silicon
    

    Authors:

    Vukic, Mladenko (190613)

    Editors

    Biljanović, Petar (3694)

    Proceedings title: Zbornik radova savjetovanja MEET
    Language: hrvatski
    Place: Rijeka
    Year: 1993
    ISBN/ISSN: 953-6042-03-7
    Pages: from 7 to 12
    Meeting: Mipro '93 - MEET (Mikroelektronika, elektronika i elektroničke tehnologije)
    Held: from 05/24/93 to 05/27/93
    Summary: Most of suggested models of the electrical conduction inpolycrystalline silicon include assumption that the energy bandstructure of grain is the same as that of monocrystallinesilicon. To check up this assumption Schrodinger equation hadbeen solved for appropriate boundary conditions, and dispersionrelation was researched.
    Keywords: The polycrystalline silicon, grains,conduction band, heteorstrucutre, Schrodiningers wave equation,dispresion relationship, conduction minibands
    

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49. Type of paper: Paper in proceedings
    

    Title: Status of the Integrated Citcuits Production
    

    Authors:

    Biljanović, Petar (3694)

    Editors

    Srb, Neven

    Proceedings title: Zbornik radova 3. SONT-a - sv. 1
    Language: hrvatski
    Place: Opatija
    Year: 1991
    ISBN/ISSN: 86-81997-01-7
    Pages: from 127 to 131
    Meeting: 3. Međunarodni simpozij o novim tehnologijama
    Held: from 10/15/91 to 10/17/91
    Summary: IC industry continues to emerge as one of the "keys" to theeconomic health on many countries and nations in the world. Inthe paper the Pentagons' most wanted list of technologies isgiven. Overview of process technologies is analysed. USA, Japanand European companies' IC sales are compared.
    

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50. Type of paper: Paper in proceedings
    

    Title: Basic Photosensors Electro-Optical Characzeristics
    

    Authors:

    Gradišnik, Vera (176336)

    Lui, A.

    Vecchi, M.C.

    Zen, M.

    Zorzi, N.

    Editors

    Biljanović, Petar (3694)

    Proceedings title: Zbornik radova savjetovanja MET
    Language: hrvatski
    Place: Rijeka
    Year: 1992
    ISBN/ISSN: 86-385-0113-7
    Pages: from 43 to 47
    Meeting: Mipro '92 - MET (Mikroelektronika i elektroničke tehnologije)
    Held: from 05/18/92 to 05/21/92
    Summary: The development of the IRST-CCD triple polysilicon, double metalprocess, which will be used for the fabrication at prototypelevel of custom I.C. for computer vision, requires theoptimization of basic optical sensors characteristics andtechnology. This work presents our results on the electro-opticalcharacteristics of different types of photodiodes andphotocapapacitors to be used in the CCD pixel array. Theseexperimental results are analyzed by using a two-dimensional MOSdevice simulator suitably modified to include the photogenerationof carriers within the silicon semiconductor due to lightabsorption.
    Keywords: Photosensor, Electro-optical characteristics, Device simulator, Photogeneration
    

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51. Type of paper: Paper in proceedings
    

    Title: Simulation of pn junction capacitance
    

    Authors:

    Gradišnik, Vera (176336)

    Editors

    Biljanović, Petar (3694)

    Proceedings title: Zbornik radova savjetovanja MEET
    Language: hrvatski
    Place: Rijeka
    Year: 1993
    ISBN/ISSN: 953-6042-03-7
    Pages: from 13 to 18
    Meeting: Mipro '93 - MEET (Mikroelektronika, elektronika i elektroničke tehnologije)
    Held: from 05/24/93 to 05/27/93
    Summary: The junction and storage capacitance of the n+p junction diodeare studied using a finite difference computer program. The modelapplies for real doping profile. It provides understanding of thephysics related storage of mobile holes and electrons in thejunction space-charge region. The simulated results ofquasi-static and transient change of storage charge for forwardand reverse step voltages are presented.
    Keywords: Capacitance, Junction diode, Computer program, Simulated results
    

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52. Type of paper: Paper in proceedings
    

    Title: A Comprehensive Study of Lateral and vertical Current Transport in Si/Si1-xGex/Si HBT's
    

    Authors:

    Matutinović-Krstelj, Željka (153702)

    Venkataraman, V.

    Prinz, E.J.

    Sturm, J.C.

    Magee, C.W.

    Proceedings title: IEDM 1993 - Technical Digest
    Language: engleski
    Place: Washington, USA
    Year: 1993
    ISBN/ISSN: 0-7803-1450-6
    Pages: from 87 to 90
    Meeting: International Electron Device Meeting - IEDM 1993
    Held: from 12/05/93 to 12/08/93
    Summary: We studied the effects of heavy doping and Ge concentration inthe base on the dc performance of Si/Si1-xGex/Si npn HBT's. Thelateral drift mobility of holes in heavily doped epitaxial SiGebase is found to be lower than bulk Si values and independent ofGe content, and the Hall scattering factor is less than unity anddecreases with increasing Ge concentration. For the verticalelectron transport we have observed bandgap narrowing due toheavy base doping which is, to first order, independent of Geconcentration. Finally, a model for the collector currentenhancement with respect to Si devices, including the effects ofreduced density of states in the strained Si1-xGex base and theeffective bangap due to Ge and heavy doping, is presented.
    Keywords: Current transport, Heavy doping, Heterojunction bipolar transistor (HBT), Mobility, Bangap narrowing
    

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53. Type of paper: Paper in proceedings
    

    Title: On Some Aspects of the Formation of Terminology of Electrical Engineering in our Lexicography
    

    Authors:

    Štambuk, Anka (106340)

    Editors

    Srb, Neven

    Proceedings title: Zbornik radova 3. SONT-a - Sv. 1.
    Language: hrvatski
    Place: Opatija
    Year: 1991
    ISBN/ISSN: 86-81997-01-7
    Pages: from 156 to 160
    Meeting: 3. Međunarodni simpozij o novim tehnologijama
    Held: from 10/15/91 to 10/17/91
    Summary: The paper describes historiographic and creative role oflexicography with a particular survey of terminologicaldictionaries. Examples illustrating the development ofterminology of electrical engineering in Croatia are used topoint out the process of creation of terms which influenced bysociocultural reasons and development of science. It is describedhow the acquired data are applied in the creation of dictionaryof electronics.
    Keywords: Historical and creative role of lexicography, development of electrical engineering terminology in Croatia
    

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54. Type of paper: Paper in proceedings
    

    Title: Analysis of Integral Equation Numerical Solutions for Electromagnetic Wave Problems
    

    Authors:

    Roje, Vesna (41402)

    Proceedings title: Zbornik radova KoREMA 1993.
    Language: hrvatski
    Place: Zagreb
    Year: 1993
    ISBN/ISSN: 953-6037-00-9
    Pages: from 22 to 26
    Meeting: 39. godišnji skup KoREMA
    Held: from 04/26/93 to 04/28/93
    Summary: Numerical solutions of integral equations for the waveguiding andfree space propagation problems ara analysed. The solution areobserved on microstrip line and cylindrical antenna examples. Theappearance of spurious solutions and possibilities of theiravoiding are discussed. A new approach to the formulation of theproblem proposed, leading to reliable convergence.
    Keywords: numerical solutions of integral equations, waveguiding propagation, microstrip line, cylindrical antenna, spurious solutions, convergence.
    

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55. Type of paper: Paper in proceedings
    

    Title: Convergence of Numerical Solutions of Coupled Integral Equations - Cylindrical Antennas Application
    

    Authors:

    Roje, Vesna (41402)

    Poljak, Dragan

    Proceedings title: Zbornik radova KoREMA 1993.
    Language: hrvatski
    Place: Zagreb
    Year: 1993
    ISBN/ISSN: 953-6037-00-9
    Pages: from 59 to 62
    Meeting: 39. godišnji skup KoREMA
    Held: from 04/26/93 to 04/28/93
    Summary: A direct numerically efficient method for solving coupledintegral equations of an perfectly conducting cylindrical dipoleis described in thid paper. The convergence of the numericalsolutions obtained for current distribution is investigated. Itis shown that the possibility of convergence to thecorrect solution as well as accuracy of the obtainedresults are strongly dependent on dimensions. In other words, theresults depend on the way in which the boundary conditions aresatisfied, as well as on the number of points in which they aresatisfied. Theoretical predictions are numerically verified.
    Keywords: numerically efficient method, coupled integral equations, current distribution, convergence.
    

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56. Type of paper: Paper in proceedings
    

    Title: A New Approach for Solving Integral Equations
    

    Authors:

    Roje, Vesna (41402)

    Poljak, Dragan

    Editors

    Vidmar, Branko

    Proceedings title: Zbornik radova - ELMAR
    Language: hrvatski
    Place: Zadar
    Year: 1993
    ISBN/ISSN: 8680139-01-07
    Pages: from 193 to 196
    Meeting: 36. Međunarodni simpozij ELMAR-a
    Held: from 09/20/93 to 09/22/93
    Summary: A new method of direct integration for solving integral equationsis applied. The method provides the calculation of the charge andcurrent distibution along a cylindrical surface. The papercontains a brief description of various methods and the resultsare compared with those of the other known numerical methods.
    Keywords: direct integration, integral equations, current distribution, charge distribution, cylindrical surface, numerical methods.
    

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57. Type of paper: Paper in proceedings
    

    Title: Transmission of Communication Signals Using a Low Voltage Power-Distribution Network
    

    Authors:

    Marinović, Ivan

    Čavka, Željko

    Zanchi, Igor (54465)

    Editors

    Vidmar, Branko

    Proceedings title: Zbornik radova - ELMAR
    Language: hrvatski
    Place: Zadar
    Year: 1993
    ISBN/ISSN: 8680139-01-07
    Pages: from 217 to 220
    Meeting: 36. Međunarodni simpozij ELMAR-a
    Held: from 09/20/93 to 09/22/93
    Summary: The possibility to transmit the communication signals using lowvoltage power-distribution network has been investigated. Theused network could be an isolated power distribution system (forexample the power distribution network on a ship), the same as apart of a public power network (for example a commercialbuilding). The network frequency response of the transmittedsignals was measured, and the posibilities the same as thelimitations of transmition were considered.
    Keywords: low voltage power-distribution, transmit the communication signals, frequency response.
    

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58. Type of paper: Paper in proceedings
    

    Title: Comparison on Exact and Approximative Methods in Prediction of Multiple Knife Edge Diffraction Losses
    

    Authors:

    Zanchi, Igor (54465)

    Marinović, Ivan

    Proceedings title: Zbornik radova KoREMA
    Language: hrvatski
    Place: Zagreb
    Year: 1993
    ISBN/ISSN: 953-6037-00-9
    Pages: from 80 to 83
    Meeting: 39. godišnji skup KoREMA
    Held: from 04/26/93 to 04/28/93
    Summary: The exact method for calculating the diffraction losses ofelectromagnetic waves over more than two knife edge obstacles waspresented by Vogler 1982, with possibility to calculate theattenuation for a propagation path containing up to ten knifeedges. On the basis of Volger interpretation, a computer programhas been written and calculated results for three knife edges arecompared with approximative metode results according to Deygout.The examples whitch mostly differ in results are pointed out andthe calculated results are compared with measured diffractionlosses. The limitation of the knife edge model is pointed outtoo, and the Uniform Geometric Theory of Diffraction is used inthose situations.
    Keywords: exact method, diffraction losses of electromagnetic waves, knife edge, computer program, Vogler method, Deygout method, Uniform Geometric Theory of Diffraction.
    

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59. Type of paper: Paper in proceedings
    

    Title: Calculation of Radio-Signal Intensity Using PC
    

    Authors:

    Marinović, Ivan

    Zanchi, Igor (54465)

    Editors

    Rožić, Nikola

    Proceedings title: Zbornik radova SOFTCOM 1993.
    Language: hrvatski
    Place: Split
    Year: 1993
    Pages: from 135 to 145
    Meeting: SOFTCOM 93 - Savjetovanje o softveru u telekomunikacijama i računalnim mrežama
    Held: from 06/16/93 to 06/16/93
    Summary: In order to predict the intensity of electromagnetic field at thereceiving point somebodz can use one of two ways. The first isbased on statistical method which is predominantly used inpredicting the coverage in broadcasting services. Very often itis necessary to combine the method with a deterministic method,specially if it is of significant interest to predict moreprecisely the field intensity on microlocation. The second wayuses mathematical models which combine all relevant physical cases where no line of sight is between transmitter and thereceiving point, it is necessary to take in account thediffraction phenomena, choosing the suitable model.
    Keywords: intensity of electromagnetic field, statistical method, coverage in broadcasting services, deterministic method, mathematical models, diffraction.
    Other: Zbornik u tisku
    

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60. Type of paper: Paper in proceedings
    

    Title: Abbrevations in Bilingual Dictionary of Electronics
    

    Authors:

    Štambuk, Anka (106340)

    Editors

    Andrijašević, Marin

    Vrhovac, Yvonne

    Proceedings title: Zbornik Savjetovanja Strani jezik u dodiru s materinskim jezikom 1993.
    Language: hrvatski
    Place: Zagreb
    Year: 1993
    Pages: from 123 to 129
    Meeting: Savjetovanje Strani jezik u dodiru s materinskim jezikom
    Held: from 05/08/93 to 05/09/93
    Summary: The paper describes different morphological modes of abbrevationtypes and suggests a new model, based on the existing ones.Within the framework of the given model, abbrevations in thebilingual English-Croatian dictionary of electronics are studied.English and Croatian abbrevations are contrasted and their mutualrelation is analysed.
    Keywords: Abbrevation types, English-Croatian Dictionary of Electronics, contrastive analysis.
    Other: Zbornik nema ISBN
    

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61. Type of paper: Paper in proceedings
    

    Title: Suffixation Patterns in Croatian Equivalents of English Electronics Terms Ending in -er and -or.
    

    Authors:

    Štambuk, Anka (106340)

    Editors

    Andrijašević, Marin

    Vrhovac, Yvonne

    Proceedings title: Zbornik savjetovanja "Trenutak sadašnjosti u učenju jezika" 1993.
    Language: hrvatski
    Place: Zagreb
    Year: 1993
    Pages: from 235 to 242
    Meeting: Savjetovanje "Trenutak sadašnjosti u učenju jezika"
    Held: from 04/16/93 to 04/17/93
    Summary: The paper analyses suffixation patterns in derivational wordformation process of Croatian equivalents of English electronicterms ending in -er and -or. The analysis is performed using thecomputer data base of the English-Croatian dictionary. Terms weregouped according to suffixation patterns using the backwardconcordance word lists. Frequency of particular suffixes andtheir semantic features are discussed. The paper aims atdiscovering the patterns of derivational word formation in orderto facilitate the future word-formation process.
    Keywords: Croatian equivalents of English terms ending in -er and -or,word-formative patterns.
    

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62. Type of paper: Paper in proceedings
    

    Title: Computer Application in a Terminological Dictionary Project
    

    Authors:

    Štambuk, Anka (106340)

    Editors

    Srb, Neven

    Proceedings title: Zbornik radova 4. SONT-a I.
    Language: hrvatski
    Place: Pula
    Year: 1993
    ISBN/ISSN: 86-81997
    Pages: from 15 to 18
    Meeting: 4. Međunarodni simpozij o novim tehnologijama
    Held: from 10/25/93 to 10/27/93
    Summary: The paper describes the development of modern lexical databases.It also analyses the software made for the lexicographic projectof the bilingual dictionary of electronics. The software wasdeveloped in stages to support the following: a) bilingualdictionary; b) bilingual dictionary with definitions; c)lexicologic research work.
    Keywords: A lexical database, software, definitions, lexicologic research.
    

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63. Type of paper: Paper in proceedings
    

    Title: Semiconductor materials and devices in work of prof. Josip Lončar.
    

    Authors:

    Biljanović, Petar (3694)

    Proceedings title: Zbornik Josip Lončar - Život i djelo 1993.
    Language: hrvatski
    Place: Zagreb
    Year: 1993
    ISBN/ISSN: 953-154-020-9
    Pages: from 183 to 184
    Meeting: Akademik Josip Lončar - Život i djelo
    Held: from 02/20/92 to 02/20/92
    Summary: Professional activity of prof. Josip Lončar in the field ofsemiconductor physics and technology is given.
    Keywords: semiconductor, chip, pn-junction, transistor, fotodiode, fototransistor, tunel diode, Seebeck effect.
    

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64. Type of paper: Paper in proceedings
    

    Title: Piezoelectrically Active Defects and Their Impact on the Performance of GaAs MESFETs
    

    Authors:

    McNally, Patrick J.

    McCaffrey, J. Kilian

    Barić, Adrijan (136444)

    Editors

    Hashmi, M.S.J.

    Proceedings title: Proceedings of AMPT'93
    Language: engleski
    Place: Dublin, Irska
    Year: 1993
    ISBN/ISSN: 1 872327 01 X
    Pages: from 981 to 992
    Meeting: International Conference On Advances in Materials and Processing Technologies (AMPT'93)
    Held: from 08/24/93 to 08/27/93
    Summary: This paper discusses the effects of residual structural crystaldefects in the GaAs Metal-Semiconductor Field Effect Transistor(MESFET) on device electrical performance, in particularpiezoelectrically-active defect-induced dc threshold voltageshifts due to the presence of these defects. The results obtained in this study show, for the first time, thatthe presence of a piezoelectric defect located in or near theactive channel of a GaAs MESFET, will affect the thresholdvoltage of the device in a region close to the centre of thedefect. Furthermore they can very easily account for previousexperimental observations. Combining this experimental data withour new study, there is now strong evidence to suggest that thepiezoelectric attributes of defects in a GaAs substrate cannot beignored in any medium or large scale device integrationtechnology.
    Keywords: Piezoelectrically active defects, GaAs MESFET, Threshold voltage
    

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65. Type of paper: Paper in proceedings
    

    Title: Modelling the effects of piezoelectrically active defects and their impact on the threshold voltage of GaAs metal-semiconductor field effect transistors
    

    Authors:

    Barić, Adrijan (136444)

    McNally, Patrick J.

    McCaffrey, J. Kilian

    Editors

    Fornari, R.

    Proceedings title: Proceedings of EXMATEC 94
    Language: engleski
    Place: Parma, Italy
    Year: 1994
    Pages: from P86 to P94
    Meeting: 2nd International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Techniques (EXMATEC 94)
    Held: from 05/18/94 to 05/20/94
    Summary: In this paper we discuss the effects of residual structural crystal defects on the threshold voltage of GaAs MESFETs via piezoelectric charge distribution set up around individual point defects. This represents a "first-cut" effort to elucidate the piezoelectric impact of defects-dislocations in a GaAs substrate and their subsequent device characteristic alterations. Threshold voltage shifts associated with the edge, screw and 60-degree types of defects are modelled using a simple one-dimensional calculation of the moment arm of the induced charge distribution. Such calculations are in line with experimental evidence and show for the first time that the piezoelectric impact, even of point defect structures, is significant.
    Keywords: defects, gallium arsenide, piezoelectric, MESFET
    

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66. Type of paper: Paper in proceedings
    

    Title: The Threshold Voltage Control of Enhancement MOSFET with Implanted Channel
    

    Authors:

    Butković, Željko (76006)

    Editors

    Biljanović, Petar (3694)

    Proceedings title: Zbornik radova MEET '94
    Language: engleski
    Place: Rijeka
    Year: 1994
    ISBN/ISSN: 953-6042-03-7
    Pages: from 2-63 to 2-68
    Meeting: Mipro '94 - MEET '94 (Mikroelektronika, elektronika i elektroničke tehnologije)
    Held: from 05/25/94 to 05/26/94
    Summary: Integrated digital circuits use enhancement MOSFET for active device in nMOS technology and for both nMOS and pMOS in CMOS technology. The threshold voltages are usually technologically controlled with channel ion implantation. The implantation parameters needed for specific threshold voltage are determined using the theoretical analysis of MOS structure. As electric properties of nMOS and CMOS circuits are the results of the threshold voltages determined from current-voltage MOSFET's characteristics, these values are compared with the theoretically calculated threshold voltages.
    Keywords: integrated circuits, MOSFET, threshold voltage, channel ion implantation, theoretical analysis, MOSFET simulation, transfer characteristic
    

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67. Type of paper: Paper in proceedings
    

    Title: Computer network in hospitality and tourism
    

    Authors:

    Gradišnik, Vera (176336)

    Editors

    Stipetić, Vladimir

    Proceedings title: Zbornik radova Hotelska kuća 94
    Language: hrvatski
    Place: Opatija
    Year: 1994
    ISBN/ISSN: 0352-0242
    Pages: from 241 to 243
    Meeting: Međunarodni kongres Hotelska kuća 94
    Held: from 10/20/94 to 10/21/94
    Summary: A review of computer networks has been done, their technological properties with special use of data communications in tourisms and hotels management. A software and networks services which are available in currently communications system are described.
    Keywords: computer network, data inetrchange, hospitality
    

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68. Type of paper: Paper in proceedings
    

    Title: Numerical modelling of photodiode color detection
    

    Authors:

    Gradišnik, Vera (176336)

    Editors

    Gradišnik, Vera (176336)

    Proceedings title: Zbornik radova MEET 94
    Language: engleski
    Place: Rijeka
    Year: 1994
    ISBN/ISSN: 953-6042-03-7
    Pages: from 2-69 to 2-74
    Meeting: Mipro '95 - MEET '95 (Mikroelektronika, elektronika i elektroničke tehnologije)
    Held: from 05/25/94 to 05/26/94
    Summary: Research within the area of color vision-processing systems is gaining increasing importance. The paper discusses a technique of color detecion using a numerically modeled single-junction photodiode responsivity utilizing intrinsic wavelength absorption properties of silicon and photocurrent bias voltage dependence. This method is successfully applied to a silicon photodiode.
    Keywords: numerical modelling, color detection, photodiode
    

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69. Type of paper: Paper in proceedings
    

    Title: Determination of primary coefficients for Si-photodiode color detector
    

    Authors:

    Gradišnik, Vera (176336)

    Editors

    Biljanović, Petar (3694)

    Butković, Željko (76006)

    Proceedings title: Zbornik radova MEET 95
    Language: engleski
    Place: Rijeka
    Year: 1995
    ISBN/ISSN: 953-6042-14-2
    Pages: from 2-80 to 2-83
    Meeting: Mipro '95 - MEET '95 (Mikroelektronika, elektronika i elektroničke tehnologije)
    Held: from 05/22/95 to 05/26/95
    Summary: The determination of coefficients equal to optical powers of superimposed primary color components for the Si photodiode is one of the most important factors needed for a successful application of that device for color detection. In this paper, an algorithm for the determination of optimal primary coefficients of the optical power from numerically modeled Si photodiode characteristics is presented.
    Keywords: numerical modelling, color detection, photodiode
    

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70. Type of paper: Paper in proceedings
    

    Title: Subthreshold Current in MOSFET with Implanted Channel
    

    Authors:

    Butković, Željko (76006)

    Editors

    Biljanović, Petar (3694)

    Proceedings title: Zbornik radova MEET '95
    Language: engleski
    Place: Rijeka
    Year: 1995
    ISBN/ISSN: 953-6042-14-2
    Pages: from 2-56 to 2-61
    Meeting: Mipro '95 - MEET '95 (Mikroelektronika, elektronika i elektroničke tehnologije)
    Held: from 05/22/95 to 05/26/95
    Summary: Subthreshold region of MOSFET operation becomes very important in modern VLSI low-power applications. In this paper a simple theoretical approach for subthreshold swing S calculation for both types of devices with uniformly doped and implanted channel is described. As channel implantation is used for the threshold voltage adjustment, a connection between the needed technological data and the subthreshold swing is investigated. Theoretical results are compared with the more accurate values provided by two-dimensional numerical MOSFET simulation.
    Keywords: VLSI circuits, MOSFET, subthreshold current, threshold voltage, theoretical analysis, MOSFET simulation, transfer characteristic
    

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71. Type of paper: Paper in proceedings
    

    Title: Influence of Theoretically Calculated Threshold Voltages on nMOS Inverter Trasfer Characteristic
    

    Authors:

    Butković, Željko (76006)

    Editors

    Vidmar, Branko

    Proceedings title: Elmar zbornik radova
    Language: engleski
    Place: Zadar
    Year: 1994
    ISBN/ISSN: 1330-092X
    Pages: from 232 to 235
    Meeting: 36. Međunarodni simpozij ELMAR-a
    Held: from 09/12/94 to 09/14/94
    Summary: Electrical design of integrated circuits is carried out by the fitting of individual devices parameters. One of the most important MOSFET parameter, in nMOS integrated circuit design, is threshold voltage. This voltage is technologically adjusted using the results of MOS structure theoretical analysis. So calculated theoretical threshold voltage UGSOt is different from the value UGSOc extracted from device current-voltage characteristics. As circuit behaviour is determined with UGS0c, the influence of difference between UGS0t and UGS0c on the nMOS inverter transfer characteristic is analysed in this paper.
    Keywords: integrated circuits, MOSFET, threshold voltage, theoretical analysis, MOSFET characteristics, circuit simulation, transfer characteristic
    

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72. Type of paper: Paper in proceedings
    

    Title: The Threshold Voltage Adjustment of Depletion n-Channel MOSFET
    

    Authors:

    Butković, Željko (76006)

    Editors

    Štambuk-Boršić, Neda

    Proceedings title: Zbornik radova 39. godišnji skup KoREMA
    Language: engleski
    Place: Zagreb
    Year: 1994
    ISBN/ISSN: 953-6037-02-5
    Pages: from 155 to 158
    Meeting: 39. godišnji skup KoREMA
    Held: from 04/25/94 to 04/27/94
    Summary: Integrated digital circuits in nMOS technology with the best electrical characteristics use depletion MOSFET as a load device. The depletion MOSFET is fabricated with the channel ion implantation. The adjustment of ion implantation parameters for threshold voltage control is carried out using the theoretical analysis of MOS structure. In this paper the theoretically calculated threshold voltages are compared with the values extracted from current-voltage MOSFET characteristics, that are essential for nMOS circuit properties.
    Keywords: integrated circuits, nMOS technology, MOSFET, threshold voltage, channel ion implantation, theoretical analysis, MOSFET simulation, transfer characteristic
    

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73. Type of paper: Paper in proceedings
    

    Title: Threshold Voltage Characterization of Short-Channel MOSFETs by Device Simulations
    

    Authors:

    Butković, Željko (76006)

    Editors

    Benda, Vitezslav

    Mach, Pavel

    Proceedings title: ISSE'95 Proceedings
    Language: engleski
    Place: Temešvar, Češka
    Year: 1995
    Pages: from 162 to 166
    Meeting: 18th International Spring Seminar on Electronic Technology - ISSE'95
    Held: from 06/26/95 to 06/30/95
    Summary: Characterization of MOSFET parameters is essential task in MOS integrated circuit design. One of the most important MOSFET parameters is the threshold voltage. In modern scaled-down MOSFETs, threshold voltage is modulated with channel length. In this paper MOSFET threshold voltage is determined by device simulations. Using the achieved results, the parameters for several SPICE models, that describe effects of channel length on threshold voltage, are extracted. The accuracy of each model is also examined.
    Keywords: short-channel MOSFET, integrated circuit, MOSFET parameters, threshold voltage, channel length, device simulation
    

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74. Type of paper: Paper in proceedings
    

    Title: Adjectival suffixation patterns in Croatian and English electronics terms
    

    Authors:

    Štambuk, Anuška (106340)

    Editors

    Mihaljević-Djigunović, Jelena

    Pintarić, Neda

    Proceedings title: Zbornik Primijenjene lingvistike danas
    Language: hrvatski
    Place: Zagreb
    Year: 1994
    ISBN/ISSN: 953-96391-0-7
    Pages: from 264 to 271
    Meeting: Savjetovanje Primijenjena lingvistika danas
    Held: from 04/15/94 to 04/16/94
    Summary: The paper investigates word-formative patterns of suffixes in Croatian technical (electronics) terms and compares them to the corresponding forms in English with the aim of discovering regular patterns in the process of transfer from one language to the other. Semantic features of particular suffixes are described and relations between certain pairs of suffixes are analyzed.
    Keywords: word-formativepatterns of suffixes, contrastive analysis, electronics terms
    

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75. Type of paper: Paper in proceedings
    

    Title: Translation problems of general lexis of science and technology
    

    Authors:

    Štambuk, Anuška (106340)

    Editors

    Mihaljević-Djigunović, Jelena

    Pintarić, Neda

    Proceedings title: Zbornik savjetovanja Prevođenje: suvremena strujanja i tendencije
    Language: hrvatski
    Place: Zagreb
    Year: 1995
    Meeting: Savjetovanje "Prevođenje: suvremena strujanja i tendencije"
    Held: from 03/31/95 to 04/01/95
    Summary: General language, as the basis of any communication act, makes the core of language of science and technologz. Terms, on the other hand, represent the specialized words of the particular field. The third segment, usuallz called general scientific lexis, has a less specific referential function than terms and is common to all related fields of science. The analysis of translations of electronics texts has shown nonoverlapping in this lexical segment. In English we find predominantly words of Latin origin instead of synonymous words, usuallz of Anglosaxon origin, used in general language. In Croatian, however, there are not alternative forms specific for the language of science. The difference is caused by different development processes of the two languages and can be considered culture-specific.
    Keywords: general scientific lexis, nonoverlapping of English and Croatian in this segment, culture-specific lexis
    Other: NAPOMENA: zbornik radova još nije tiskan
    

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76. Type of paper: Paper in proceedings
    

    Title: Electrical and topological CMOS operational amplifiers design
    

    Authors:

    Zelić, Goran (127036)

    Vekić, Grgica

    Editors

    Biljanović, Petar (3694)

    Proceedings title: Zbornik radova savjetovanja MEET 94
    Language: engleski
    Place: Rijeka
    Year: 1994
    ISBN/ISSN: 953-6042-03-7
    Pages: from 2-114 to 2-119
    Meeting: Mipro '94 - MEET '94 (Mikroelektronika, elektronika i elektroničke tehnologije)
    Held: from 05/25/94 to 05/26/94
    Summary: The purpose of this work is to show complete process of designing an operational amplifier, from choosing electrical scheme to the layout realization. On the base of the demanding specifications, electric scheme was chosen and the devices in the circuit were dimensioned. Topological design is done by well known layout design program MAGIC. To verify the accuracy of the design the overall circuit was analyzed using program SPICE.
    Keywords: CMOS, operational amplifiers, MAGIC, SPICE
    

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77. Type of paper: Paper in proceedings
    

    Title: Influence of deep impurities on semiconductor's resistivity
    

    Authors:

    Divković Pukšec, Julijana

    Editors

    Biljanović, Petar (3694)

    Proceedings title: Zbornik savjetovanja MEET 94
    Language: hrvatski
    Place: Rijeka
    Year: 1994
    ISBN/ISSN: 953-6042-03-7
    Pages: from 2-35 to 2-40
    Meeting: Mipro '94 - MEET '94 (Mikroelektronika, elektronika i elektroničke tehnologije)
    Held: from 05/25/94 to 05/26/94
    Summary: Deep impurity affects on concentrations of electrons and holes, and throw them on semiconductor's resistivity too. In these article calculations will be presented for silicon containing deep impurity with two energy levels and shallow impurities of both types.
    Keywords: semiconductor, deep impurities, specific resistivity
    

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78. Type of paper: Paper in proceedings
    

    Title: Influence of deep trap on depletion layer width
    

    Authors:

    Divković Pukšec, Julijana

    Editors

    Biljanović, Petar (3694)

    Proceedings title: Zbornik savjetovanja MEET 95
    Language: engleski
    Place: Rijeka
    Year: 1995
    ISBN/ISSN: 953-6042-14-2
    Pages: from 2-39 to 2-44
    Meeting: Mipro '95 - MEET '95 (Mikroelektronika, elektronika i elektroničke tehnologije)
    Held: from 05/22/95 to 05/26/95
    Summary: Depletion layer width depends on density of ionized impurity atoms on both sides of pn junction. Ionization of deep impurity is function of the position of their energy levels. The expression for depletion layer width is given with the assumption that deep trap is amphoteric and their influence on both sides of pn junction is taken into account.
    Keywords: pn junction, depletion layer width, deep impurity
    

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79. Type of paper: Paper in proceedings
    

    Title: Influence of recombination centers on pn junction current
    

    Authors:

    Divković Pukšec, Julijana

    Editors

    Vidmar, Branko

    Proceedings title: Zbornik radova ELMAR 94
    Language: hrvatski
    Place: Božava (Dugi otok), Hrvatska
    Year: 1994
    ISBN/ISSN: 953-96030-0-5
    Pages: from 228 to 231
    Meeting: 36. Međunarodni simpozij ELMAR-a
    Held: from 09/12/94 to 09/14/94
    Summary: Generataion and recombination current caaused by deep trap in pn junction has, together with lifetime, great affects on various properties of electronic components (speed, for example). In this article is present the influence of recombination center on pn junction current under both, forward and reverse, condition. Calculations are prepared for two different trap concentration; trap energy level is acceptor type. In all calculations influence of trap )deep acceptor impurity) on electrons and holes (concentration and mobility) and on depletion region width, is taken into account.
    Keywords: pn junction, recombination current, deep impurity, deep trap
    

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80. Type of paper: Paper in proceedings
    

    Title: Influence of surface states on surface states on surface recombination velocity
    

    Authors:

    Divković Pukšec, Julijana

    Editors

    Vidmar, Branko

    Medved Rogina, Branka

    Radanović, Božidar

    Proceedings title: Zbornik radova ELMAR 95
    Language: engleski
    Place: Pula
    Year: 1995
    ISBN/ISSN: 953-96030-1-3
    Pages: from 301 to 304
    Meeting: 37. Međunarodni simpozij ELMAR-a
    Held: from 09/18/95 to 09/20/95
    Summary: The semiconductor's surface is still today an area which is not well investigated. The influence of the surface on the electrical properties of a semiconductor is significant, but usually it is not included into an ordinary analysis of the semiconductor properties. The semiconductor surface can be represented with surface states, which are assumed to introduce a deep energy level. These states act as a donor or a acceptor. The surface recombination velocity is one of the most important parameters which depends on the surface states. In this paper the surface recombination velocity as a function of the surface potential and the position of surface states'deep energy level is presented.
    Keywords: surface states, surface recombination
    

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81. Type of paper: Paper in proceedings
    

    Title: GaAs electron mobility models
    

    Authors:

    Barić, Adrijan (136444)

    McNally, Patrick J.

    Editors

    Biljanović, Petar (3694)

    Proceedings title: Zbornik radova MEET 95
    Language: engleski
    Place: Rijeka
    Year: 1995
    ISBN/ISSN: 953-6042-14-2
    Pages: from 2-74 to 2-79
    Meeting: Mipro '95 - MEET '95 (Mikroelektronika, elektronika i elektroničke tehnologije)
    Held: from 05/22/95 to 05/26/95
    Summary: This paper presents electron mobility models suitable for the simulation of GaAs semiconductor devices. The models of the electron mobility dependent on the electric field and on the projection of the electric field on the direction of the current flow are compared. The influence of the mobility models on the output characteristics of an ion-implanted GaAs MESFET is given. The results obtained by applying the projection of the electric field are in good agreement with experimental data.
    Keywords: GaAs, MESFET, modelling, electron mobility
    

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82. Type of paper: Paper in proceedings
    

    Title: 2D numerical simulation of MESFETs - Influence of substrate doping
    

    Authors:

    Barić, Adrijan (136444)

    Editors

    Vidmar, Branko

    Medved Rogina, Branka

    Radanović, Božidar

    Proceedings title: Proceedings of 37th ELMAR International Symposium
    Language: engleski
    Place: Zadar
    Year: 1995
    ISBN/ISSN: 953-96030-1-3
    Pages: from 305 to 309
    Meeting: 37. Međunarodni simpozij ELMAR-a
    Held: from 09/18/95 to 09/20/95
    Summary: A two-dimensional numerical simulation of ion-implanted GaAs MESFETs is presented. The transfer characteristics and threshold voltages are extracted. The importance of the substrate doping is pointed out as a factor which substantially influences the uniformity of electrical characteristics and the physical explanation for such a behaviour is given.
    Keywords: GaAs, MESFET, numerical simulation, substrate doping
    

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83. Type of paper: Paper in proceedings
    

    Title: Specific role of GaAs integrated circuits
    

    Authors:

    Barić, Adrijan (136444)

    Editors

    Bartak, G. F.

    Srb, Neven

    Proceedings title: Proceedings of the 5th International Symposium on New Technologies
    Language: engleski
    Place: Zagreb
    Year: 1995
    ISBN/ISSN: 953-6228-00-9
    Pages: from 216 to 218
    Meeting: 5th International Symposium on New Technologies
    Held: from 09/25/95 to 09/27/95
    Summary: This paper presents the specific features that make GaAs an important material for integrated circuits, specifically where high throughput and low degree of complexity and programmability is required. Typical applications have been discussed and the advantages offered by GaAs integrated circuits have been emphasized.
    Keywords: GaAs, integracted ciruits, VLSI, system performance
    

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84. Type of paper: Paper in proceedings
    

    Title: Dependence of recombination center efficiency on energy level position
    

    Authors:

    Divković Pukšec, Julijana

    Editors

    Štambuk-Boršić, Neda

    Proceedings title: Zbortnik radova Korema 1994
    Language: engleski
    Place: Zagreb
    Year: 1994
    ISBN/ISSN: 953-6037-02-5
    Pages: from 151 to 154
    Meeting: 39. godišnji skup KoREMA
    Held: from 04/25/94 to 04/27/94
    Summary: Recombination centers are introduced into semiconductors with the purpose to influence the carriers lifetimes. These centers act on the recombination-generation process by introducing deep energy levels. The efficiency of recombination centers depends on the position of the energy level introduced by them into the semiconductor. These paper elaborates on silicon with shallow impurities (donor and acceptor type), containing recombination center whose energy level is of donor or acceptor type. Electron and hole lifetimes are derived, basing on Shockley-Read-Hall recombination.
    Keywords: recombination center, energy level, lifetime
    

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85. Type of paper: Paper in proceedings
    

    Title: Influence of deep trap on junction capacitance
    

    Authors:

    Divković Pukšec, Julijana

    Editors

    Štambuk-Boršić, Neda

    Proceedings title: Zbornik radova KOREMA 1995
    Language: engleski
    Place: Zagreb
    Year: 1995
    ISBN/ISSN: 953-6037-08-4
    Pages: from 213 to 216
    Meeting: 40. godišnji skup KoREMA
    Held: from 04/19/95 to 04/21/95
    Summary: Deep trap, through their density and energy level position, has influence on junction capacitance. In this article calculation of capacitance will be given for junction having shallow and deep impurities.
    Keywords: deep trap, junction capacitance, depletion layer width
    

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86. Type of paper: Paper in proceedings
    

    Title: Influence of Auger recombination on electrons' and holes' lifetimes
    

    Authors:

    Divković Pukšec, Julijana

    Editors

    Benda, Vitezslav

    Mach, Pavel

    Proceedings title: ISSE' 95
    Language: engleski
    Place: Temešvar, Češka
    Year: 1995
    Pages: from 167 to 171
    Meeting: 18th International Spring Seminar on Electronic Technology - ISSE'95
    Held: from 06/26/95 to 06/30/95
    Summary: Recombination on a deep center determines the lifetime of electrons and holes. Usuallz, only the Shockley-Read-Hall recombination is taken into account, while the Auger recombination has been neglected. In this article lifetime is calculated in dependenceof both recombination processes and comparison between them is made. The assumed deep center has single energy level, and calculations are made for different deep impurity's concentrations. The influence of mentioned recombination processes on lifetime of electrons and holes is presented for low and high injection level. Auger recombination is calculated for two values of recombination's coefficients.
    Keywords: deep trap, lifetime, Auger recombination
    

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87. Type of paper: Paper in proceedings
    

    Title: Static series-voltage noise margin for BICMOS
    

    Authors:

    Szabo, Aleksandar (45735)

    Editors

    Biljanović, Petar (3694)

    Proceedings title: Zbornik radova MEET 94
    Language: hrvatski
    Place: Rijeka
    Year: 1994
    ISBN/ISSN: 953-6042-03-7
    Pages: from 2-147 to 2-150
    Meeting: Mipro '94 - MEET '94 (Mikroelektronika, elektronika i elektroničke tehnologije)
    Held: from 05/25/94 to 05/26/94
    Summary: Noise margin is the maximum spurious signal that can be accepted by the device when used in a system, whilst still operating correctly. Making use of the maximum square between normal and mirrored voltage transfer characteristic method, the BICMOS noise margin is found. The noise margins for CMOS and BICMOS are compared.
    Keywords: digital circuits, BICMOS, noise margin
    

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88. Type of paper: Paper in proceedings
    

    Title: Static series-voltage noise margin in digital circuits
    

    Authors:

    Szabo, Aleksandar (45735)

    Proceedings title: Zbornik radova 39. godišnjeg skupa KoREMA
    Language: hrvatski
    Place: Zagreb
    Year: 1994
    ISBN/ISSN: 953-6037-02-5
    Pages: from 167 to 169
    Meeting: 39. godišnji skup KoREMA
    Held: from 04/25/94 to 04/27/94
    Summary: Noise margin is the maximum spurious signal that can be accepted by the device when used in a system, whilst still operating correctly. Methods to determine noise margin are reviewed and compared. Some possible errors in noise margin determination are pointed out.
    Keywords: digital circuits, noise margin
    

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89. Type of paper: Paper in proceedings
    

    Title: Development of electrical educational programs
    

    Authors:

    Szabo, Aleksandar (45735)

    Proceedings title: Zbornik radova 39. godišnjeg skupa KoREMA
    Language: hrvatski
    Place: Zagreb
    Year: 1994
    ISBN/ISSN: 953-6037-02-5
    Pages: from 407 to 409
    Meeting: 39. godišnji skup KoREMA
    Held: from 04/25/95 to 04/27/95
    Summary: The first step in the development of electrical educational programs is the definition of the desired electrical engineer profile with associated basic and particular knowledge. Only good work on the first step will result in a synchronized plan and an adequate program without overlapping, optimized in time and content. Conditions to obtain better results in the educational process are discussed.
    Keywords: electrical engineering, educational program
    

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90. Type of paper: Paper in proceedings
    

    Title: Static series-voltage noise margin for ECL
    

    Authors:

    Szabo, Aleksandar (45735)

    Proceedings title: Zbornik radova 40. jubilarnog godišnjeg skupa KoREMA
    Language: hrvatski
    Place: Zagreb
    Year: 1995
    ISBN/ISSN: 953-6037-08-4
    Pages: from 226 to 229
    Meeting: 40. godišnji skup KoREMA
    Held: from 04/19/95 to 04/21/95
    Summary: Noise margin is the maximum spurious signal that can be accepted by the device when used in a system, whilst still operating correctly. Emitter coupled logic (ECL) as the fastest logic, with a narrow region between the high and the low logic levels, has a relatively low noise margin. In this work the methods of determing ECL noise margin and the results of the analysis are presented.
    Keywords: digital circuits, noise margin, ECL
    

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91. Type of paper: Paper in proceedings
    

    Title: The finite element near field calculation
    

    Authors:

    Roje, Vesna (41402)

    Poljak, Dragan

    Proceedings title: Zbornik radova 39. godišnjeg skupa KoREMA
    Language: hrvatski
    Place: Zagreb
    Year: 1994
    ISBN/ISSN: 953-6037-02-5
    Pages: from 47 to 50
    Meeting: 39. godišnji skup KoREMA
    Held: from 04/25/94 to 04/27/94
    Summary: Pocklington's equation for thin cylindrical dipole is solved by finite element method. Suggested integral equation formulation for near field components provides implementation of both finite element and finite difference algorithm.
    Keywords: Pocklington's equation, cylindrical dipole, finite element method, near field
    

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92. Type of paper: Paper in proceedings
    

    Title: Input impedance of dipole antenna over dissipative medium
    

    Authors:

    Poljak, Dragan

    Roje, Vesna (41402)

    Editors

    Perić, N.

    Proceedings title: Zbornik radova 40. jubilarnog godišnjeg skupa KoREMA
    Language: hrvatski
    Place: Zagreb
    Year: 1995
    ISBN/ISSN: 953-6037-08-4
    Pages: from 23 to 26
    Meeting: 40. godišnji skup KoREMA
    Held: from 04/19/95 to 04/21/95
    Summary: Application of the boundary element method to antenna current calculation provides quick and efficient evaluation of input impedance. Simple numerical approach is suggested to the calculation of input impedance based on matrix form of the electric field integral equation. The same procedure can be applied both with a homogeneous or with inhomogeneous medium.
    Keywords: boundary element method, input impedance, electric field integral equation
    

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93. Type of paper: Paper in proceedings
    

    Title: Electromagnetic waves analzsis software
    

    Authors:

    Roje, Vesna (41402)

    Poljak, Dragan

    Editors

    Rožić, Nikola

    Proceedings title: Zbornik radova SoftCOM 94
    Language: hrvatski
    Place: Split
    Year: 1994
    ISBN/ISSN: 953-6114-05-4
    Pages: from 137 to 144
    Meeting: SOFTCOM 94 - Savjetovanje o softveru u telekomunikacijama i računalnim mrežama
    Held: from 06/16/94 to 06/17/94
    Summary: The software package for computational electromagnetics, based on the finite element method is offered. Developed computational procedure provides practical engineering and researching applications.
    Keywords: electromagnetic waves, finite element method, software
    

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94. Type of paper: Paper in proceedings
    

    Title: Analysis of wire antennas radiating over lossy half-space
    

    Authors:

    Poljak, Dragan

    Roje, Vesna (41402)

    Editors

    Vidmar, Branko

    Proceedings title: Zbornik radova ELMAR 94
    Language: engleski
    Place: Zagreb
    Year: 1994
    ISBN/ISSN: 953-96030-0-5
    Pages: from 196 to 199
    Meeting: 36. Međunarodni simpozij ELMAR-a
    Held: from 09/12/94 to 09/14/94
    Summary: The paper deals with an efficient method for current distribution along a cylindrical dipole over a lossy half-space. The kernel of the free-space antenna integral equation is modified by adding a new term which includes the reflection coefficient, so that the effect of the imperfectly conducting half-space is taken into account. This integral equation is solved by finite element method.
    Keywords: cylindrical dipole, lossy half-space, finite element method
    

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95. Type of paper: Paper in proceedings
    

    Title: Calculation of maximum clock frequency in logic synchronizer
    

    Authors:

    Sekso, Ivan (787878)

    Editors

    Biljanović, Petar (3694)

    Proceedings title: Zbornik radova MEET 95
    Language: hrvatski
    Place: Rijeka
    Year: 1995
    ISBN/ISSN: 953-6042-14-2
    Pages: from 2-152 to 2-155
    Meeting: Mipro '95 - MEET '95 (Mikroelektronika, elektronika i elektroničke tehnologije)
    Held: from 05/22/95 to 05/26/95
    Summary: A calculation of maximum clock frequency of logic synchronizer in the case of metastability using numerical method of repeated substitutions is described. The method is applied in the case of bistabiles from advanced CMOS and bipolar logic families.
    Keywords: logic synchronizer, metastability
    

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96. Type of paper: Paper in proceedings
    

    Title: Approximative methods in multiple diffraction losses prediction
    

    Authors:

    Zanchi, Igor (54465)

    Marinović, Ivan

    Editors

    Rožić, Nikola

    Proceedings title: Zbornik radova SoftCOM 94
    Language: hrvatski
    Place: Split
    Year: 1994
    ISBN/ISSN: 953-6114-05-4
    Pages: from 125 to 130
    Meeting: SOFTCOM 94 - Savjetovanje o softveru u telekomunikacijama i računalnim mrežama
    Held: from 06/16/94 to 06/17/94
    Summary: The multiple knife-edge diffraction losses could be calculated using various approximative methods. The computed results byusing Deygout approximation are pessimistic in some cases, and the correction method according to Giovanelli is described. Some computed examples illustrate the significance of Giovaneli's approach. Vogler's numerical method is used as the reference.
    Keywords: diffraction losses, multiple obstacles, approximative methods, knife edge diffraction
    

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97. Type of paper: Paper in proceedings
    

    Title: Low collector current behavior of insulated gate bipolar transistor
    

    Authors:

    Krois, Igor (169746)

    Editors

    Biljanović, Petar (3694)

    Proceedings title: Zbornik radova MEET 95
    Language: hrvatski
    Place: Rijeka
    Year: 1995
    ISBN/ISSN: 953-6042-14-2
    Pages: from 2-113 to 2-116
    Meeting: Mipro '95 - MEET '95 (Mikroelektronika, elektronika i elektroničke tehnologije)
    Held: from 05/22/95 to 05/26/95
    Summary: In frequency converters during commutation collector current falls to zero. In same time voltage across transistor is undefined regadless wether transistor is switch on or off. This is not a problem for correct converter operation but in some configuration of transistor protection circuits, that makes serious difficulties.
    Keywords: IGBT, frequency converter
    

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98. Type of paper: Paper in proceedings
    

    Title: Simple AM demodulator
    

    Authors:

    Krois, Igor (169746)

    Editors

    Perić, N.

    Proceedings title: Zbornik radova 40. jubilarnog skupa KoREMA
    Language: hrvatski
    Place: Zagreb
    Year: 1995
    ISBN/ISSN: 953-6037-08-4
    Pages: from 234 to 236
    Meeting: 40. godišnji skup KoREMA
    Held: from 04/19/95 to 04/21/95
    Summary: Some types of tranducers have AM signal on theirs outputs (for ex. LDVT, inductive bridges). This circuit was developed to demodulate an AM output signal. Its main advatages over other circuits are simplicity and usage of cheap components with poor electrical characteristics.
    Keywords: AM demodulator, simplicity
    

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99. Type of paper: Paper in proceedings
    

    Title: Modelling of semiconductor devices by finite elements
    

    Authors:

    Roje, Vesna (41402)

    Poljak, Dragan

    Editors

    Biljanović, Petar (3694)

    Proceedings title: Zbornik radova MEET 95
    Language: hrvatski
    Place: Rijeka
    Year: 1995
    ISBN/ISSN: 953-6042-14-2
    Pages: from 2-502 to -55
    Meeting: Mipro '95 - MEET '95 (Mikroelektronika, elektronika i elektroničke tehnologije)
    Held: from 05/22/95 to 05/26/95
    Summary: The procedure of solving coupled partial differential equations for semiconductor devices simulation is discussed. Following this approach it is possible in numerical equation for n-channal MOS device is solved by means of the finite element method. The resulting values for the potential are the initial values in the iteration process used for obtaining unknown concentrations.
    Keywords: Poisson's equation, finite element method
    

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100. Type of paper: Paper in proceedings
     

     Title: Application of boundary element method to scattering from conducting cylinder of arbitrary cross-section
     

     Authors:

     Poljak, Dragan

     Roje, Vesna (41402)

     Editors

     Rožić, Nikola

     Begušić, Dinko

     Pavelin, Ivan

     Proceedings title: Zbornik radova SoftCOM '95
     Language: hrvatski
     Place: Split
     Year: 1995
     ISBN/ISSN: 953-6114-07-0
     Pages: from 301 to 310
     Meeting: SOFTCOM 95 - Savjetovanje o softveru u telekomunikacijama i računalnim mrežama
     Held: from 06/14/95 to 06/15/95
     Summary: Calculation of scattering from conducting structures of arbitrarily shaped cross-section by means of boundary element method is performed. The rectangular cylindrical structure is analysed with TM incident wave by using constant isoparametric boundary elements.Developed software provides involving of the higher-order approximations.
     Keywords: scattering, boundary element method
     

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101. Type of paper: Paper in proceedings
     

     Title: Optical waveguide parameters
     

     Authors:

     Roje, Vesna (41402)

     Vojnović, Milan

     Editors

     Rožić, Nikola

     Begušić, Dinko

     Pavelin, Ivan

     Proceedings title: Zbornik radova SoftCOM '95
     Language: hrvatski
     Place: Split
     Year: 1995
     ISBN/ISSN: 953-6114-07-0
     Pages: from 293 to 300
     Meeting: SOFTCOM 95 - Savjetovanje o softveru u telekomunikacijama i računalnim mrežama
     Held: from 06/14/95 to 06/15/95
     Summary: The propagation in the optical waveguide is analysed for simple cylindrical two layer configuration. Proposed numerical procedure includes the calculation of the phase constant for all propagation modes same as the numerical simulation of various propagation properties. It is shown that the solution for the phase constant of the dominant mode is compatible with the solution of the approximate characteristic equation for the case of the low refraction coefficient ratio.
     Keywords: optical waveguide, phase constant, numerical simulation, dominant mode,
     

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102. Type of paper: Paper in proceedings
     

     Title: Methods for Sommerfeld integrals evaluation
     

     Authors:

     Poljak, Dragan

     Roje, Vesna (41402)

     Editors

     Vidmar, Branko

     Medved Rogina, Branka

     Radanović, Božidar

     Proceedings title: Zbornik radova ELMAR 95
     Language: engleski
     Place: Pula
     Year: 1995
     ISBN/ISSN: 953-96030-1-3
     Pages: from 145 to 148
     Meeting: 37. Međunarodni simpozij ELMAR-a
     Held: from 09/18/95 to 09/20/95
     Summary: Saddle-point technique and exponential approximation technique for the evaluation of Sommerfield integrals are presented for the case of horizontal dipole radiating over imperfectly conducting half-space.Thr features of the presented methods are outlined, and the obtained numerical results are presented.
     Keywords: saddle-point technique, exponential approximation technique, Sommerfiel integral, horizontal dipole
     

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103. Type of paper: Paper in proceedings
     

     Title: Various approaches for solving integral equations in electromagnetics
     

     Authors:

     Roje, Vesna (41402)

     Poljak, Dragan

     Editors

     Orefice, Mario

     Proceedings title: Proceedings of ICEAA 95
     Language: engleski
     Place: Torino, Italy
     Year: 1995
     Pages: from 329 to 332
     Meeting: ICEAA 95 - International Conference on Electromagnetics in Advanced Applications
     Held: from 09/12/95 to 09/15/95
     Summary: The solution of integral equations by direct integration method is presented. The advantage of using a certain variant of boundary element method is also discussed. The conclusions concerning the formulation of the problem are confirmed by numerical results obtained for cylindrical geometry of static charge and dynamic antenna problems.
     Keywords: inegral equation, direct integration method, boundary element method
     

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104. Type of paper: Paper in proceedings
     

     Title: Comparison of the theory and experiment of the heat conduction in thin layers for the case of the flat surface time varying heat sources
     

     Authors:

     Biljanović, Petar (3694)

     Jurela, Davor

     Turković, Josip

     Editors

     Bartak, G. F.

     Srb, Neven

     Proceedings title: Zbornik radova SONT 95
     Language: engleski
     Place: Zagreb
     Year: 1995
     ISBN/ISSN: 953-6228-00-9
     Pages: from 317 to 320
     Meeting: 5th International Symposium on New Technologies
     Held: from 09/25/95 to 09/27/95
     Summary: Well known approach in finding the solution of partial differential equations for heat conduction in solids is modified in the way to obtain only the time varying component of temperature through the depth of thin unbounded layer. Theory predicts interesting amplitude and phase changes for the time varying temperature through the depth of thin layer of solids. Discussion of theoretical results is restricted to the cases of thin homogeneous layer of given material. The experimental results are fully consistent with theoretical predictions.
     Keywords: thermal design, power components, thermal breakdown
     

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105. Type of paper: Prototype
     

     Title: Silicon Heating Element
     

     Authors:

     Biljanović, Petar (3694)

     Bendeković, Zdravko

     Zoričić, Božidar

     Institution of application: World Intellectual Property Organization (WIPO)
     Date of application: 07/11/91
     Registration number of application: H05B3/14,3/26
     Countries in which it is protected: Kanada,Švicarska,Danska,Španjolska,Francuska,Velika Britanija,Japan,USA,Italija
     Language: engleski
     Summary: A silicon heting element comprises an electrically isolatedsupport of high thermal coductivity - preferably made of BeO orAlN - bearing a silicon leyer and electric contacts. The siliconlayer consists of polycrystalline or amorphus silicon which isdoped by semiconducting dopants of the p- or n- type, preferablyin a concentration higher than 10E18/ccm. The contacts are highlytemperature resistant and alloyed to the silicon layer.Alternatively the contacts are composed of a contact layer ofrefractory metal being in contact with the electrically isolatedsuppert and of a second temperature resistant material alloyedonto the contact layer. Zhe silicon heating element is producedby laying a layer of polycristalline or amorphous silicon onto analectrically isolated support of high thermal conductivity. It isdeposited as a thin layer and is doped with semiconductingdopands of the p- or n- type either during or after thisdeposition. Electric contacts are then connected to the siliconlayer. The silicon heating element can also be used as atemperature sensor.
     Keywords: Polysilicon, AlN, Heating, Dopand, Sensor
     

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106. Type of paper: Prototype
     

     Title: Electrical heat converter
     

     Authors:

     Biljanović, Petar (3694)

     Bendeković, Zdravko

     Zoričić, Božidar

     Institution of application: Državni zavod za patente Republike Hrvatske
     Date of application: 03/29/93
     Registration number of application: 381-03/93-01/
     Countries in which it is protected: Hrvatska
     Language: hrvatski
     Summary: Electrical heat convertor consists of a metal or semimetal tube or plate of adequate shape and volume connected to electrical power source. Electrical energy flux converts to heat flux raising surounding medium temperature. Converion of electrical energy into heat energy is very effective.
     Keywords: heat, energy conversion, efficiency
     Other: Puni broj patentne prijave: 381-03/93-01/1642
     

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107. Type of paper: Ph.D.
     

     Title: Model of Heavily Doped Emitter and Application in Numerical Analysis of Bipolar Transistor
     Faculty: Elektrotehnički fakultet Sveučilište u Zagrebu
     Author: BUTKOVIĆ ŽELJKO
     Date of defense: 05/07/92
     Language: hrvatski
     Number of pages: 239
     Summary: The approach to numerical analysis of bipolar transistor, basedon the modelling of physical effects in emitter is developed inthis dissertation. The bandgap narrowing and asymmetry factor for heavily dopedsilicon is calculated using theoretical model. The analyticalmodel suitable for numerical analysis of semiconductor devices isintroduced. Models of carrier mobilities and carrierrecombinations are analysed with emphasis on heavy dopingdependence. The most suitable model for current transport and carrier surfacerecombination in polysilicon is selected. Model of carriertunneling through potential barrier of thin oxide layer isanalysed. Mathematical model of bipolar transistor is defined and numericalanalysis approach is developed. Program for numerical analysis ofbipolar transistors is developed and it includes the models ofheavily doped silicon, polysilicon and insulated layer. This program is used in calculation on typical examples ofbipolar transistors and its performances has been successfullydemonstrated. Influence of physical effects of heavily dopedsilicon and of polysilicon and insulated layer on electricalcharacteristics of transistors with metal and polysilicon emittercontact are elaborated.
     Keywords: Bandgap narrowing, Heavily doped silicon, Analytical model, Carrier mobilities, Carrier recombination, Polysilicon, Oxide layer, Numerical analysis, Program, Bipolar transistor, Polysilicon emitter
     

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108. Type of paper: Ph.D.
     

     Title: Simulation of the impact of stress induced piezoelectric charge in GaAs MESFETs
     Faculty: School of Electronic Engineering Dublin City University
     Author: BARIĆ ADRIJAN
     Date of defense: 03/24/95
     Language: engleski
     Number of pages: 179
     Summary: This work presents the methodology involved in applying numerical electronic device simulation, and specifically, the application of this methodology to the study of piezoelectric effects in GaAs MESFETs. Firstly, a three-dimensional (3D) numerical simulation package EVEREST has been enhanced by the introduction and verification of models for GaAs device physics. Then a 2D finite element program for the simulation of mechanical stresses in the MESFET structure and a program for the extraction of piezoelectric charge from the numerically calculated stresses have been produced. The force load model applied to the metal/dielectric/GaAs structure is suggested as a good mathematical representation of the physical processes involved. The impact of stress induced piezoelectric charge, substrate doping and varying gate length on the electrical characteristics of epitaxial and ion-implanted MESFETs have been determined by numerical simulation using the EVEREST device simulator. Comparison between experimental data and simulation results has been presented. Finally, conclusions and suggestions for further study have been given.
     Keywords: simualtion, piezoelectric, GaAs, MESFET
     

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109. Type of paper: Ph.D.
     

     Title: Base doping effects and design of Si/SiGe/Si heterojunction bipolar transistors
     Faculty: Department of Electrical Engineering Princeton University
     Date of defense: 06/10/94
     Language: engleski
     Number of pages: 181
     Summary: Recent advances in high speed performance of Si/SiGe/Si heterojunction bipolar transistors (HBT's) and the possibility of their integration into standard silicon bipolar technology have been the focus of attention among Si-based heterojunction devices. This thesis focuses on Si/SiGe/Si HBT's, specifically issuses related to process integration, the design of these devices and empirical DC modeling. The devices in this work were grown by Rapid Thermal Chemical Vapor Deposition (RTCVD). The quality of epitaxial material and interface was studied in a wide pressure range by x-ray reflectivity (XRR), photoluminescence, electrical performance of p-type resonant tunneling diodes, and x-ray difrraction (XRD) of a superlattice. An upper limit to interface roughness of below 5A is established by XRR and XRD. Hall and drfit lateral hole mobilities are measured in a wide range of base p-type dopings and germanium concentrations. The first empirical model for effective bandgap narrowing for minority carrier transport in the p-SiGe base over a wide range of base dopings and Ge concentrations, extracted from the room temperature collector current measurements, is presented. The DC design trade-off between the base sheet resistance and gain is modeled. Minority carrier diffusion lengt is measured for the first time in p-type SiGe as a function of doping. Finally, a new vertical transport device in the Si-based material system, a symetric electron resonant tunneling diode, is demonstrated for the first time.
     Keywords: SiGe heterospojni bipolarni tranzistor
     

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110. Type of paper: M.A.
     

     Title: Characteristics of polysilicon layers
     Faculty: Elektrotehnički fakultet Sveučilište u Zagrebu
     Author: VUKIĆ MLADENKO
     Date of defense: 09/26/94
     Language: hrvatski
     Number of pages: 81
     Summary: The polysilicon film is composed of little crystallites - grains, which are joined by grain boundaries. The grain boundary is the most important defect in polycrystalline film. The electrical, mechanical and chemical properties of polycrystalline silicon films are determined by their structure. For that reason the influences of parameters of CVD and LPCVD on film structure, grain size, orientation, and film thickness and quality are analysed. Besides deposition, all other high temperature processes change the structure of polycrystalline films. This paper gives the description of the influences of film structure on electrical conductivity, mobility of free carriers, impurity diffusion, and oxidation. The electrical properties of polysilicon films are considered at great length.
     Keywords: polysilicon, CVD, LPCVD, temperature, conductivity, mechanisms of electrical conduction, diffusion, oxidation
     

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111. Type of paper: Mentorship
     

     Title: Model of Heavily Doped Emitter and Application in Numerical Analysis of Bipolar Transistors
     Faculty: Elektrotehnički fakultet Sveučilište u Zagrebu
     Mentor: BILJANOVIĆ PETAR
     Date of defense: 05/07/92
     Number of pages: 239
     Author: Butković Željko
     Degree level: Ph.D.
     

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112. Type of paper: Mentorship
     

     Title: Macro-model of Voltage Controlled Oscillator for Monolithic Integrated Circuit
     Faculty: Elektrotehnički fakultet Sveučilište u Zagrebu
     Mentor: BILJANOVIĆ PETAR
     Date of defense: 03/03/92
     Number of pages: 207
     Author: Šunde Viktor
     Degree level: M.A.
     

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113. Type of paper: Mentorship
     

     Title: Characteristics of polysilicon layers
     Faculty: Elektrotehnički fakultet Sveučilište u Zagrebu
     Mentor: BILJANOVIĆ PETAR
     Date of defense: 09/26/94
     Number of pages: 72
     Author: Vukic mr. sc. Mladenko
     Degree level: M.A.
     

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114. Type of paper: Mentorship
     

     Title: Design and measurement in CMOS and BiCMOS technology
     

     Authors:

     Matutinović-Krstelj, Željka (153702)

     Chason, E.

     Sturm, J.C.

     Faculty: Elektrotehnički fakultet Sveučilište u Zagrebu
     Mentor: BILJANOVIĆ PETAR
     Date of defense: 09/22/94
     Number of pages: 80
     Author: Kušić mr. sc. Karmen
     Degree level: M.A.
     

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115. Type of paper: Computer program
     

     Title: Software for computational dictionary with definitions
     

     Authors:

     Bilić, H

     Jadrić, Ana (17580)

     Štambuk, Anka (106340)

     Odering party: Ministarstvo znanosti i tehnologije i informatike Republike Hrvatske
     Institution depot: Fakultet elektrotehnike strojarstva i brodogradnje Sveučilišta u Splitu
     HW platform: PC XT/386
     Operating system: DOS
     Programming language: Clipper
     Year: 1991
     Summary: The software is made to support a computational dictionary withdefinitions. The basic functions of the program include: dataentry and sorting; data retrieval and correction; inversion ofdictionary entries; and a number of printouts of both headwordsand their semantic equivalents.
     Keywords: A computational dictionary software, sorting, retrieval, corrections, inversion, printouts.
     

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116. Type of paper: Survey/Study
     

     Title: Transient Behavior of Modern Logic Families
     

     Authors:

     Sekso, Ivan (64830)

     Ordering party: ETF - Zagreb, Zavod za elektroniku
     Institution depot: ETF - Zagreb, Zavod za elektroniku
     Year: 1991
     Number of pages: 52
     Language: hrvatski
     Summary: This work addresses transient behavior of high-speed logiccircuits. Advanced CMOS and bipolar logic families are describedin terms of improved switching speed as well as new technologyand circuit solutions. Ground bounce and simultaneous switchingnoise, as a result of sharper transient edges and device packageinductance are discussed in detail. A characteristic parameters of this noise, such as Volp (peak low-level output voltage) aremeasured on FAST (NS), AHCT (Samsung), EPIC ACL (TI), QUIET ACT(NS) and BCT (TI) octal bus drivers. Due to chip improvements,such as output edge control, multiple center Vcc and GND pins,etc., the noise is below the TTL threshold but still requires various board-level measures to be taken.
     Keywords: advanced families, switching, ground bounce, bus driver
     Other: d
     

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117. Type of paper: Other
     

     Title: English-Croatian and Croatian-English Dictionary of Electronics with Definitions
     

     Authors:

     Štambuk, Anka (106340)

     Pervan, Maja (36443)

     Pilković, Mara (14005)

     Roje, Vesna (41402)

     Type of work: Rječničke definicije
     Language: hrvatski
     Summary: 2430 definitions in Croatian are made, as a result of joint work of three English teachers-terminologists and eight specialists in electronics.
     Keywords: Dictionary or electronics, definitions in Croatian.
     

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118. Type of paper: Other
     

     Title: Model of Heavily Doped Emitter and Application in Numerical Analysis of Bipolar Transistor
     

     Authors:

     Biljanović, Petar (3694)

     Type of work: Prikaz doktorske disertacije, autora Ž. Butkovića u Informacije MIDEM 1993.
     Language: hrvatski
     Summary: The approach to numerical analysis of bipolar transistor, based on the modelling of physical effects in emitter is developed in this dissertation. The bandgap narrowing and asymmetry factor for heavily doped silicon is calculated using theoretical model. The analytical model suitable for numerical analysis of semiconductor devices is introduced. Models of carrier mobilities and carrier recombinations are analysed with emphasis on heavy doping dependence. The most suitable model for current transport and carrier surface recombination in polysilicon is selected. Model of carrier tunneling through potential barrier of thin oxide layer is analysed. Mathematical model of bipolar transistor is defined and numerical analysis approach is developed. Program for numerical analysis of bipolar transistors is developed and it includes the models of heavily doped silicon, polysilicon and insulated layer. This program is used in calculation of typical examples of bipolar transistors and its performance has been successfully demonstrated. Influence of physical effects of heavily doped silicon and of polysilicon and insulated layer on electrical characteristics of transistors with metal and polysilicon emitter contact are elaborated.
     Keywords: Bandgap narrowing, Heavily doped silicon, Analytical model, Carrier mobilities, Carrier recombination, Polysilicon, Oxide layer, Numerical analysis, Program, Bipolar transistor, Polysilicon emitter
     

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119. Type of paper: Other
     

     Title: A terminological dictionary project
     

     Authors:

     Štambuk, Anuška (106340)

     Type of work: Poster presentation
     Language: engleski
     Summary: The paper describes the computer-based project of the bilingual (English-Croatian and Croatian-English) dictionary of electronics. Methodological and organizational principles are discussed in the context of general principles of terminological dictionary work. The project development reflects the general trends of modern computer-based lexicographic work - the evolution from a machine-readable dictionary to the lexical knowledge base.
     Keywords: dictionarz of electronics, methodological and organizational principles
     Other: Poster "A Terminological Dictionary Project (From Machine Readable Dictionary to the Lexical Knowledge Base)" je prezentiran na Sixth EURALEX International Congress, Amsterdam, 1994.
     

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120. Type of paper: Other
     

     Title: The 1995 VERBATIM Award
     Type of work: nagrada
     Other: Nagrada koju dodjeljuje European Association for Lexicography i Verbatim, the language quarterly.
     

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121. Type of paper: Other
     

     Title: The Project of English-Croatian Dictionary
     

     Authors:

     Štambuk, Anuška (106340)

     Type of work: Izlaganje na "9th International Lexicography Course", Exeter
     Language: engleski
     Other: Exeter, 17th to 21st April, 1995
     

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