SVIBOR - Papers quoted in CC - project code: 2-07-266
MINISTRY OF SCIENCE AND TECHNOLOGY
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tel.: +385 1 459 44 44, fax: +385 1 459 44 69
E-mail: ured@znanost.hr
SVIBOR - Collecting Data on Projects in Croatia
Papers quoted in Current Contents on project 2-07-266
Quoted papers: 12
Other papers: 112
Total: 124
Title: Piezoelectrically active defects and their impact on the
performance of GaAs MESFETs
- Authors:
- McNally, Patrick J.
- McCaffrey, J. Kilian
- Barić, Adrijan (136444)
Journal: Journal of Materials Processing Technology
ISSN: 0924-0136
Year: 1995
Number of references: 12
Language: engleski
Summary: This paper discusses the effects of residual structural
crystaldefects in the GaAs Metal-Semiconductor Field Effect
Transistor(MESFET) on device electrical performance, in
particularpiezoelectrically-active defect-induced dc threshold
voltageshifts due to the presence of these defects.
The results obtained in this study show, for the first time, thatthe
presence of a piezoelectric defect located in or near theactive channel of
a GaAs MESFET, will affect the thresholdvoltage of the device in a region
close to the centre of thedefect. Furthermore they can very easily account
for previousexperimental observations. Combining this experimental data
withour new study, there is now strong evidence to suggest that
thepiezoelectric attributes of defects in a GaAs substrate cannot beignored
in any medium or large scale device integrationtechnology.
Keywords: defects, piezoelectric, GaAs, MESFET
Title: Modelling the effects of piezoelectricallz active defects
and their impact on the threshold voltage of GaAs MESFETs
- Authors:
- Barić, Adrijan (136444)
- McNally, Patrick J.
- McCaffrey, J. Kilian
Journal: Materials Science and Engineering B
ISSN: 0921-5107
Volume: B28
Year: 1994
Pages: from 248 to 252
Number of references: 13
Language: engleski
Summary: In this paper we discuss the effects of residual structural
crystal defects on the threshold voltage of GaAs MESFETs via piezoelectric
charge distribution set up around individual point defects. This represents
a "first-cut" effort to elucidate the piezoelectric impact of
defects-dislocations in a GaAs substrate and their subsequent device
characteristic alterations. Threshold voltage shifts associated with the
edge, screw and 60-degree types of defects are modelled using a simple
one-dimensional calculation of the moment arm of the induced charge
distribution. Such calculations are in line with experimental evidence and
show for the first time that the piezoelectric impact, even of point defect
structures, is significant.
Keywords: defects, piezoelectric, GaAs, MESFET
Title: Growth pressure effects on Si/SiGe chemical vapor
deposition
- Authors:
- Matutinović-Krstelj, Željka (153702)
- Chason, E.
- Sturm, J.C.
Journal: Journal of Electronic Materials
Number: 6
ISSN: 0361-5235
Volume: 24
Year: 1995
Pages: from 725 to 730
Number of references: 14
Language: engleski
Summary: We studied the effects of growth pressure on SiGe/Si
heterostructures grown by rapid thermal chemical vapor deposition in the
pressure range of 6-220 Torr. The material was characterized by
photoluminescence (PL), x-ray reflectivity, and electrical measurements on
resonant tunneling diodes (RTDs). High quality material was demonstrated
throughout the pressure range,
but a weaker PL intensity at higher pressure (220 Torr)indicates lower
lifetimes. Interface abruptness was degraded at higher pressures due to gas
transients. This was confirmed by x-ray reflectivity measurements and the
performance of RTDs. We have established a low pressure limit to interface
roughness of 0.2-0.5 nm, determined by x-ray reflectivity.
Keywords: SiGe, CVD
Information: svibor@znanost.hr
